Si2392ADS
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Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
FEATURES
SOT-23 (TO-236)
• TrenchFET® power MOSFET
D
3
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
2
S
APPLICATIONS
1
G
Top View
• DC/DC converters / boost converters
Marking code: G2
• LED backlighting in LCD TVs
• Power management for mobile computing
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = 10 V
RDS(on) max. () at VGS = 6 V
RDS(on) max. () at VGS = 4.5 V
Qg typ. (nC)
ID (A) a
Configuration
D
• Load switch
G
100
0.126
0.144
0.189
2.9
3.1
Single
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
SOT-23
Si2392ADS-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed drain current (t = 300 μs)
SYMBOL
LIMIT
VDS
VGS
100
± 20
3.1
2.5
2.2 b, c
1.8 b, c
8
2.1
1 b, c
3
0.45
2.5
1.6
1.25 b, c
0.8 b, c
-55 to +150
ID
IDM
Continuous source-drain diode current
TC = 25 °C
TA = 25 °C
IS
Single pulse avalanche current
Single pulse avalanche energy
L = 0.1 mH
IAS
EAS
Maximum power dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Operating junction and storage temperature range
TJ, Tstg
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
t5s
Maximum junction-to-ambient b, d
Maximum junction-to-foot (drain)
Steady state
Notes
a. Based on TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 5 s
d. Maximum under steady state conditions is 166 °C/W
S14-0909-Rev. A, 28-Apr-14
SYMBOL
TYPICAL
MAXIMUM
UNIT
RthJA
RthJF
75
40
100
50
°C/W
Document Number: 62960
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2392ADS
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Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
100
-
-
-
V
59
-
-
-4.8
-
Static
Drain-source breakdown voltage
VDS/TJ
VDS temperature coefficient
ID = 250 μA
mV/°C
VGS(th) temperature coefficient
VGS(th)/TJ
Gate-source threshold voltage
VGS(th)
VDS = VGS, ID = 250 μA
1.2
-
3
V
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
nA
VDS = 100 V, VGS = 0 V
-
-
1
VDS = 100 V, VGS = 0 V, TJ = 55 °C
-
-
10
VDS 5 V, VGS = 10 V
5
-
-
VGS = 10 V, ID = 2 A
-
0.102
0.126
Gate-source leakage
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
Forward transconductance a
Dynamic
RDS(on)
gfs
VGS = 6 V, ID = 1 A
-
0.120
0.144
VGS = 4.5 V, ID = 1 A
-
0.135
0.189
VDS = 20 V, ID = 2 A
-
5
-
-
196
-
VDS = 50 V, VGS = 0 V, f = 1 MHz
-
67
-
-
14
-
-
5.2
10.4
-
2.9
5.8
-
1
-
-
1.4
-
0.9
4.3
8.6
-
40
60
μA
A
S
b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Rg
VDS = 50 V, VGS = 10 V, ID = 2.2 A
VDS = 50 V, VGS = 4.5 V, ID = 2.2 A
f = 1 MHz
td(on)
tr
VDD = 50 V, RL = 27.7
ID 1.8 A, VGEN = 4.5 V, Rg = 1
-
68
102
-
14
21
tf
-
20
30
td(on)
-
8
16
td(off)
tr
td(off)
VDD = 50 V, RL = 27.7
ID 1.8 A, VGEN = 10 V, Rg = 1
tf
-
10
20
-
10
20
-
7
14
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulse diode forward current a
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
TC = 25 °C
IS = 1.8 A
IF = 1.8 A, di/dt = 100 A/μs,
TJ = 25 °C
-
-
2.1
-
-
8
-
0.8
1.2
V
-
23
35
ns
-
21
32
nC
-
17
-
-
6
-
A
ns
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S14-0909-Rev. A, 28-Apr-14
Document Number: 62960
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2392ADS
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
8
VGS = 10 V thru 5 V
VGS = 4.5 V
0.8
ID - Drain Current (A)
ID - Drain Current (A)
6
VGS = 4 V
4
0.6
TC = 25 °C
0.4
2
0.2
TC = 125 °C
TC = - 55 °C
VGS = 3 V
0
0
0.5
1
1.5
0
2
1
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.21
280
0.17
210
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0
VGS = 4.5 V
VGS = 6 V
0.13
VGS = 10 V
0.09
Ciss
140
Coss
70
Crss
0.05
0
2
4
ID - Drain Current (A)
6
0
8
0
20
40
80
100
Capacitance
On-Resistance vs. Drain Current and Gate Voltage
2
10
VGS = 10 V, 2 A
RDS(on) - On-Resistance (Normalized)
ID = 2.2 A
VGS - Gate-to-Source Voltage (V)
60
VDS - Drain-to-Source Voltage (V)
8
6
VDS = 25 V
VDS = 80 V
4
2
1.7
1.4
VGS = 4.5 V, 1 A
1.1
VGS = 6 V, 1 A
0.8
0.5
0
0
1.5
3
4.5
Qg - Total Gate Charge (nC)
Gate Charge
S14-0909-Rev. A, 28-Apr-14
6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 62960
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2392ADS
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.35
100
ID = 2 A
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
0.28
10
TJ = 150 °C
TJ = 25°C
1
TJ = 125 °C
0.21
0.14
TJ = 25 °C
0.07
0.1
0.0
0
0.2
0.4
0.6
0.8
1.0
2
1.2
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.8
10
8
Power (W)
2.5
VGS(th) (V)
4
ID = 250 μA
2.2
6
4
1.9
2
1.6
- 50
- 25
0
25
50
75
100
125
TA = 25 °C
0
150
0.01
0.1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
1000
100
Limited by RDS(on)*
ID - Drain Current (A)
10
Limited by IDM
100 μs
1
1 ms
10 ms
0.1
100 ms
10 s, 1s
DC
0.01
TA = 25 °C
Single Pulse
BVDSS Limited
0.001
0.1
1
10
100
1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
S14-0909-Rev. A, 28-Apr-14
Document Number: 62960
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2392ADS
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
3.5
ID - Drain Current (A)
2.8
2.1
1.4
0.7
0
0
25
50
75
100
125
150
0
25
TC - Case Temperature (°C)
3
1.0
2.4
0.8
1.8
0.6
Power (W)
Power (W)
Current Derating a
1.2
0.6
0.4
0.2
0
0.0
0
25
50
75
100
TC - Case Temperature (°C)
Power, Junction-to-Foot
125
150
50
75
100
125
150
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ max.= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S14-0909-Rev. A, 28-Apr-14
Document Number: 62960
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2392ADS
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 166 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62960.
S14-0909-Rev. A, 28-Apr-14
Document Number: 62960
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOT-23 (TO-236): 3-LEAD
b
3
E1
1
E
2
e
S
e1
D
0.10 mm
C
0.004"
A2
A
C
q
Gauge Plane
Seating Plane
Seating Plane
C
A1
Dim
0.25 mm
L
L1
MILLIMETERS
Min
INCHES
Max
Min
Max
0.044
A
0.89
1.12
0.035
A1
0.01
0.10
0.0004
0.004
A2
0.88
1.02
0.0346
0.040
b
0.35
0.50
0.014
0.020
c
0.085
0.18
0.003
0.007
D
2.80
3.04
0.110
0.120
E
2.10
2.64
0.083
0.104
E1
1.20
1.40
0.047
e
0.95 BSC
e1
L
1.90 BSC
0.40
L1
q
0.0748 Ref
0.60
0.016
0.64 Ref
S
0.024
0.025 Ref
0.50 Ref
3°
0.055
0.0374 Ref
0.020 Ref
8°
3°
8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
Document Number: 71196
09-Jul-01
www.vishay.com
1
Application Note 826
Vishay Siliconix
0.049
(1.245)
0.029
0.022
(0.559)
(0.724)
0.037
(0.950)
(2.692)
0.106
RECOMMENDED MINIMUM PADS FOR SOT-23
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index Return to Index
APPLICATION NOTE
Document Number: 72609
Revision: 21-Jan-08
www.vishay.com
25
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Vishay
Disclaimer
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Revision: 01-Jan-2022
1
Document Number: 91000