SI4532ADY-T1-GE3

Si4532ADY Vishay Siliconix N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC ID (A) 0.053 at VGS = 10 V 4.9 0.075 at VGS = 4.5 V 4.1 0.080 at VGS = - 10 V - 3.9 0.135 at VGS = - 4.5 V - 3.0 S2 D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G2 G1 Top View Ordering Information: Si4532ADY-T1-E3 (Lead (Pb-free) Si4532ADY-T1-GE3 (Lead (Pb-free and Halogen-free) S1 D2 N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) N-Channel Parameter Symbol 10 s P-Channel Steady State 10 s Steady State Drain-Source Voltage VDS 30 - 30 Gate-Source Voltage VGS ± 20 ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C 4.9 3.7 3.9 2.9 IDM Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa ID IS TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range PD V - 3.9 - 3.0 - 3.1 - 2.4 - 1.0 20 1.7 0.94 - 1.7 2 1.13 2 1.2 1.3 0.73 1.3 0.76 TJ, Tstg Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS N-Channel Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t  10 s Steady State Steady State RthJA RthJF P-Channel Typ. Max. Typ. Max. 55 62.5 54 62.5 90 110 87 105 40 50 34 45 Unit °C/W Note: a. Surface mounted on 1" x 1" FR4 board. Document Number: 71133 S11-1908-Rev. D, 26-Sep-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4532ADY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS VDS = VGS, ID = 250 µA N-Ch 1 VDS = VGS, ID = - 250 µA P-Ch -1 VDS = 0 V, VGS = ± 20 V N-Ch ± 100 VDS = 0 V, VGS = ± 20 V P-Ch ± 100 VDS = 30 V, VGS = 0 V N-Ch 1 V VDS = - 30 V, VGS = 0 V P-Ch -1 VDS = 30 V, VGS = 0 V, TJ = 55 °C N-Ch 5 VDS = - 30 V, VGS = 0 V, TJ = 55 °C P-Ch -5 ID(on) RDS(on) gfs VSD VDS 5 V, VGS = 10 V N-Ch 20 VDS - 5 V, VGS = - 10 V P-Ch - 20 VGS = 10 V, ID = 4.9 A N-Ch 0.044 VGS = - 10 V, ID = - 3.9 A P-Ch 0.062 0.080 VGS = 4.5 V, ID = 4.1 A N-Ch 0.062 0.075 VGS = - 4.5 V, ID = - 3 A P-Ch 0.105 0.135 VDS = 15 V, ID = 4.9 A N-Ch 11 VDS = - 15 V, ID = - 2.5 A P-Ch 5 IS = 1.7 A, VGS = 0 V N-Ch 0.80 1.2 IS = - 1.7 A, VGS = 0 V P-Ch - 0.82 - 1.2 N-Ch 8 16 P-Ch 10 20 N-Ch 1.4 P-Ch 2 nA µA A 0.053  S V Dynamicb Total Gate Charge Gate-Source Charge Qg N-Channel VDS = 10 V, VGS = 10 V, ID = 4.9 A Qgs Gate-Drain Charge Qgd P-Channel VDS = - 4 V, VGS = - 10 V, ID = - 3.9 A Gate Resistancee Rg f = 1 MHz td(on) N-Channel VDD = 10 V, RL = 10  ID  1 A, VGEN = 10 V, Rg = 6  Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time tr td(off) tf 1.2 P-Ch 1.9 N-Ch 0.4 1.6 3.2 P-Ch 1.5 6.2 12 N-Ch 12 20 P-Ch 8 15 N-Ch 10 20 P-Ch 9 18 N-Ch 23 45 P-Ch 21 40 N-Ch 8 15 P-Ch 10 20 IF = 1.7 A, dI/dt = 100 A/µs N-Ch 25 40 IF = - 1.7 A, dI/dt = 100 A/µs P-Ch 27 40 P-Channel VDD = - 10 V, RL = 10  ID  - 1 A, VGEN = - 10 V, Rg = 6  trr N-Ch nC  ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71133 S11-1908-Rev. D, 26-Sep-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4532ADY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 20 VGS = 10 V thru 5 V 16 4V I D - Drain Current (A) I D - Drain Current (A) 16 12 8 4 12 8 TC = 125 °C 4 3V 25 °C 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 600 0.15 500 0.12 Ciss C - Capacitance (pF) R DS(on) - On-Resistance () - 55 °C 0.09 VGS = 4.5 V 0.06 VGS = 10 V 400 300 200 Coss 0.03 100 Crss 0 0.00 0 4 8 12 ID - Drain Current (A) 16 0 20 6 12 On-Resistance vs. Drain Current 24 30 Capacitance 10 1.8 VDS = 10 V ID = 4.9 A R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 18 VDS - Drain-to-Source Voltage (V) 8 6 4 2 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge Document Number: 71133 S11-1908-Rev. D, 26-Sep-11 8 VGS = 10 V ID = 4.9 A 1.6 1.4 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4532ADY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.15 0.12 10 ID = 4.9 A 0.09 TJ = 150 °C R DS(on) - I S - Source Current (A) 20 TJ = 25 °C 0.06 0.03 0.00 1 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0 1.4 Source-Drain Diode Forward Voltage 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Gate-to-Source Voltage 0.4 30 0.2 0.0 Power (W) V GS(th) Variance (V) 24 ID = 250 µA - 0.2 18 12 - 0.4 6 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 150 0 10 -3 10 -2 10 -1 TJ - Temperature (°C) Threshold Voltage 1 Time (s) 10 100 600 Single Pulse Power 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 90 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 71133 S11-1908-Rev. D, 26-Sep-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4532ADY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 20 TC = - 55 °C VGS = 10 V thru 6 V 16 5V I D - Drain Current (A) I D - Drain Current (A) 16 12 8 4V 4 25 °C 125 °C 12 8 4 2V 3V 0 0 0 2 4 6 VDS - Drain-to-Source Voltage (V) 8 0 1 6 7 Transfer Characteristics 0.30 1000 0.24 800 C - Capacitance (pF) R DS(on) - On-Resistance () Output Characteristics 2 3 4 5 VGS - Gate-to-Source Voltage (V) 0.18 VGS = 4.5 V 0.12 VGS = 10 V Ciss 600 400 0.06 200 0.00 0 Coss Crss 0 3 6 9 ID - Drain Current (A) 12 On-Resistance vs. Drain Current Document Number: 71133 S11-1908-Rev. D, 26-Sep-11 15 0 6 12 18 24 VDS - Drain-to-Source Voltage (V) 30 Capacitance www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4532ADY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.8 VDS = 10 V ID = 3.9 A R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 8 6 4 2 2 4 6 8 Qg - Total Gate Charge (nC) 1.4 1.2 1.0 0.8 0.6 - 50 0 0 VGS = 10 V ID = 3.9 A 1.6 10 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 30 0.40 RDS(on) - On-Resistance () TJ = 150 °C I S - Source Current (A) - 25 10 TJ = 25 °C 1 0.32 ID = 3.9 A 0.24 0.16 0.08 0.00 0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) 1.5 0 Source-Drain Diode Forward Voltage 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Gate-to-Source Voltage 30 0.8 0.6 24 0.4 Power (W) VGS(th) Variance (V) ID = 250 µA 0.2 18 12 0.0 6 - 0.2 - 0.4 - 50 - 25 0 25 50 75 TJ - Temperature (°C) Threshold Voltage www.vishay.com 6 100 125 150 0 10 -2 10 -1 1 Time (s) 10 100 Single Pulse Power, Junction-to-Ambient Document Number: 71133 S11-1908-Rev. D, 26-Sep-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4532ADY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 87 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71133. Document Number: 71133 S11-1908-Rev. D, 26-Sep-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000