SQ4532AEY-T1_GE3

SQ4532AEY www.vishay.com Vishay Siliconix Automotive N-and P-Channel 30 V (D-S) 175 °C MOSFET FEATURES SO-8 Dual D1 8 D1 7 D2 6 D2 5 • TrenchFET® power MOSFET • AEC-Q101 qualified c • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Top View 2 1 G1 S1 4 3 G2 S2 D1 S2 Marking Code: Q4532A PRODUCT SUMMARY G2 N-CHANNEL P-CHANNEL 30 -30 RDS(on) (Ω) at VGS = ± 10 V 0.031 0.070 RDS(on) (Ω) at VGS = ± 4.5 V 0.042 0.190 7.3 -5.3 VDS (V) ID (A) Configuration G1 N- and p-pair S1 D2 N-Channel MOSFET P-Channel MOSFET ORDERING INFORMATION Package SO-8 Lead (Pb)-free and halogen-free SQ4532AEY (for detailed order number please see www.vishay.com/doc?79771) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL P-CHANNEL Drain-source voltage VDS 30 -30 Gate-source voltage VGS Continuous drain current TC = 25 °C TC = 125 °C Continuous source current (diode conduction) Pulsed drain current a Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation a L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID ± 20 7.3 -5.3 4.2 -3 IS 4.2 -3 IDM 29 -21 IAS 10 -9 EAS 5 4 3.3 3.3 1.1 1.1 PD TJ, Tstg -55 to +175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-foot (drain) PCB mount b SYMBOL N-CHANNEL P-CHANNEL RthJA 110 105 RthJF 45 45 UNIT °C/W Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. When mounted on 1" square PCB (FR4 material) c. Parametric verification ongoing S21-0375-Rev. B, 23-Apr-2021 Document Number: 62981 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4532AEY www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance b VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0, ID = 250 μA N-Ch 30 - - VGS = 0, ID = -250 μA P-Ch -30 - - VDS = VGS, ID = 250 μA N-Ch 1.5 2 2.5 VDS = VGS, ID = -250 μA P-Ch -1.5 -2 -2.5 N-Ch - - ± 100 P-Ch - - ± 100 VDS = 0 V, VGS = ± 20 V VGS = 0 V VDS = 30 V N-Ch - - 1 VGS = 0 V VDS = -30 V P-Ch - - -1 VGS = 0 V VDS = 30 V, TJ = 125 °C N-Ch - - 50 VGS = 0 V VDS = -30 V, TJ = 125 °C P-Ch - - -50 VGS = 0 V VDS = 30 V, TJ = 175 °C N-Ch - - 150 VGS = 0 V VDS = -30 V, TJ = 175 °C P-Ch - - -150 VGS = 10 V VDS = 5 V N-Ch 15 - - VGS = -10 V VDS = -5 V P-Ch -15 - - VGS = 10 V ID = 4.9 A N-Ch - 0.021 0.031 VGS = -10 V ID = -3.5 A P-Ch - 0.056 0.070 0.064 VGS = 10 V ID = 4.9 A, TJ = 125 °C N-Ch - - VGS = -10 V ID = -3.5 A, TJ = 125 °C P-Ch - - 0.100 VGS = 10 V ID = 4.9 A, TJ = 175 °C N-Ch - - 0.082 VGS = -10 V ID = -3.5 A, TJ = 175 °C P-Ch - - 0.117 VGS = 4.5 V ID = 4.1 A N-Ch - 0.033 0.042 VGS = -4.5 V ID = -2.5 A P-Ch - 0.157 0.190 VDS = 15 V, ID = 4.9 A N-Ch - 22 - VDS = -15 V, ID = -3.5 A P-Ch - 5.5 - V nA μA A Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge c Qgd Gate resistance S21-0375-Rev. B, 23-Apr-2021 Rg VGS = 0 V VDS = 15 V, f = 1 MHz N-Ch - 357 535 VGS = 0 V VDS = -15 V, f = 1 MHz P-Ch - 352 528 VGS = 0 V VDS = 15 V, f = 1 MHz N-Ch - 82 123 VGS = 0 V VDS = -15 V, f = 1 MHz P-Ch - 95 142 VGS = 0 V VDS = 15 V, f = 1 MHz N-Ch - 36 53 VGS = 0 V VDS = -15 V, f = 1 MHz P-Ch - 59 88 VGS = 10 V VDS = 15 V, ID = 3.9 A N-Ch - 5.9 7.8 VGS = -10 V VDS = -15 V, ID = -2.5 A P-Ch - 7.9 10.2 VGS = 10 V VDS = 15 V, ID = 3.9 A N-Ch - 1 - VGS = -10 V VDS = -15 V, ID = -2.5 A P-Ch - 1.1 - VGS = 10 V VDS = 15 V, ID = 3.9 A N-Ch - 1.9 - VGS = -10 V VDS = -15 V, ID = -2.5 A f = 1 MHz P-Ch - 2.7 - N-Ch 1.7 3.4 5.1 P-Ch 2.8 5.8 8.6 pF nC Ω Document Number: 62981 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4532AEY www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER Turn-on delay time Rise time Turn-off delay time Fall time SYMBOL td(on) tr td(off) tf TEST CONDITIONS MIN. TYP. MAX. N-Ch - 7 10 VDD = -15 V, RL = 15 Ω ID ≅ -1 A, VGEN = -10 V, Rg = 1 Ω P-Ch - 6 9 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 1 Ω N-Ch - 17 21 VDD = -15 V, RL = 15 Ω ID ≅ -1 A, VGEN = -10 V, Rg = 1 Ω P-Ch - 17 21 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 1 Ω N-Ch - 10 14 VDD = -15 V, RL = 15 Ω ID ≅ -1 A, VGEN = -10 V, Rg = 1 Ω P-Ch - 19 24 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 1 Ω N-Ch - 19 24 VDD = -15 V, RL = 15 Ω ID ≅ -1 A, VGEN = -10 V, Rg = 1 Ω P-Ch - 16 20 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 1 Ω UNIT ns Source-Drain Diode Ratings and Characteristics b Pulsed current a ISM Forward voltage VSD N-Ch - - 29 P-Ch - - -21 IS = 2 A N-Ch - 0.8 1.2 IS = -1.5 A P-Ch - -0.8 -1.2 A V Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-0375-Rev. B, 23-Apr-2021 Document Number: 62981 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4532AEY www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 20 20 VGS = 10 V thru 4 V 16 ID - Drain Current (A) ID - Drain Current (A) 16 12 VGS = 3 V 8 4 12 TC = 25 °C 8 TC = 125 °C 4 TC = - 55 °C VGS = 2 V 0 0 0.0 0.4 0.8 1.2 1.6 2.0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transfer Characteristics 0.10 500 0.08 400 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Output Characteristics 0.06 0.04 VGS = 4.5 V 0.02 Ciss 300 200 Coss 100 VGS = 10V Crss 0.00 0 0 4 8 12 16 20 0 5 ID - Drain Current (A) 10 15 20 25 VDS - Drain-to-Source Voltage (V) 30 Capacitance On-Resistance vs. Drain Current 2.0 10 RDS(on) - On-Resistance (Normalized) ID = 3.9 A VDS = 15 V VGS - Gate-to-Source Voltage (V) 10 8 6 4 2 0 0 1 2 3 4 Qg - Total Gate Charge (nC) Gate Charge S21-0375-Rev. B, 23-Apr-2021 5 6 ID = 4.9 A 1.7 VGS =10 V 1.4 1.1 VGS = 4.5 V 0.8 0.5 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 62981 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4532AEY www.vishay.com Vishay Siliconix 5 0.5 4 0.1 VGS(th) Variance (V) ID - Drain Current (A) N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 3 TC = 25 °C 2 TC = 125 °C 1 ID = 5 mA - 0.3 ID = 250 μA - 0.7 - 1.1 TC = - 55 °C - 1.5 - 50 - 25 0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 25 50 75 100 125 150 175 TJ - Temperature (°C) Threshold Voltage Transfer Characteristics 0.25 10 0.20 RDS(on) - On-Resistance (Ω) TJ = 150 °C 1 IS - Source Current (A) 0 TJ = 25 °C 0.1 0.01 0.15 0.10 TJ = 150 °C 0.05 TJ = 25 °C 0.001 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source Drain Diode Forward Voltage 50 30 VDS - Drain-to-Source Voltage (V) TC = - 55 °C gfs - Transconductance (S) 24 TC = 25 °C 18 TC = 125 °C 12 6 40 ID = 1 mA 30 20 10 0 0 0 1 2 3 ID - Drain Current (A) Transconductance S21-0375-Rev. B, 23-Apr-2021 4 5 -50 -25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 Drain Source Breakdown vs. Junction Temperature Document Number: 62981 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4532AEY www.vishay.com Vishay Siliconix N-CHANNEL THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 100 IDM Limited ID - Drain Current (A) 10 Limited by RDS(on)a 100 μs 1 ms 1 10 ms 100 ms 0.1 BVDSS Limited 1 s, 10 s, DC TC = 25 °C Single Pulse 0.01 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) 100 Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified S21-0375-Rev. B, 23-Apr-2021 Document Number: 62981 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4532AEY www.vishay.com Vishay Siliconix N-CHANNEL THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 110 °C/W 0.02 3. TJM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. S21-0375-Rev. B, 23-Apr-2021 Document Number: 62981 7 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4532AEY www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 5 20 VGS = 10 V thru 6 V 4 ID - Drain Current (A) ID - Drain Current (A) 16 VGS = 5 V 12 8 VGS = 4 V 4 TC = 125 °C TC = - 55 °C VGS = 2 V 0 2 4 TC = 25 °C 2 1 VGS = 3 V 0 3 0 6 8 0 10 1 VDS - Drain-to-Source Voltage (V) 0.5 4 5 600 500 C - Capacitance (pF) 0.4 0.3 0.2 VGS = 4.5 V 0.1 400 Ciss 300 200 Coss 100 Crss VGS =10 V 0.0 0 0 4 8 12 16 20 0 5 ID - Drain Current (A) 10 15 20 25 VDS - Drain-to-Source Voltage (V) 30 Capacitance On-Resistance vs. Drain Current 2.0 10 RDS(on) - On-Resistance (Normalized) ID = 2.5 A VDS = 15 V VGS - Gate-to-Source Voltage (V) 3 Transfer Characteristics Output Characteristics RDS(on) - On-Resistance (Ω) 2 VGS - Gate-to-Source Voltage (V) 8 6 4 2 ID = 3.5 A 1.7 VGS = 10 V 1.4 1.1 VGS = 4.5 V 0.8 0.5 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge S21-0375-Rev. B, 23-Apr-2021 8 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 62981 8 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4532AEY www.vishay.com Vishay Siliconix 20 1.0 16 0.7 VGS(th) Variance (V) ID - Drain Current (A) P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 12 TC = 25 °C 8 ID = 250 μA 0.4 ID = 5 mA 0.1 - 0.2 4 TC = 125 °C TC = - 55 °C - 0.5 - 50 - 25 0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 0 50 75 100 125 150 175 Threshold Voltage Transfer Characteristics 0.5 10 0.4 RDS(on) - On-Resistance (Ω) 100 IS - Source Current (A) 25 TJ - Temperature (°C) 1 TJ = 150 °C 0.1 TJ = 25 °C 0.3 TJ = 150 °C 0.2 0.01 0.1 0.001 0.0 TJ = 25 °C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source Drain Diode Forward Voltage - 30 VDS - Drain-to-Source Voltage (V) 10 8 gfs - Transconductance (S) 2 TC = 25 °C TC = - 55 °C 6 4 TC = 125 °C 2 0 0 1 2 3 ID - Drain Current (A) Transconductance S21-0375-Rev. B, 23-Apr-2021 4 5 - 32 ID = 1 mA - 34 - 36 - 38 - 40 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 62981 9 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4532AEY www.vishay.com Vishay Siliconix P-CHANNEL THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 100 IDM Limited ID - Drain Current (A) 10 Limited by RDS(on)a 100 μs 1 ms 1 10 ms 100 ms 0.1 1 s, 10 s, DC BVDSS Limited TC = 25 °C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified S21-0375-Rev. B, 23-Apr-2021 Document Number: 62981 10 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4532AEY www.vishay.com Vishay Siliconix P-CHANNEL THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 105 °C/W 0.02 3. TJM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62981. S21-0375-Rev. B, 23-Apr-2021 Document Number: 62981 11 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000