SI4532CDY-T1-GE3

Si4532CDY Vishay Siliconix N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.047 at VGS = 10 V 6.0 0.065 at VGS = 4.5 V 5.2 VDS (V) N-Channel 30 P-Channel - 30 0.089 at VGS = - 10 V - 4.3 0.140 at VGS = - 4.5 V - 3.4 Qg (Typ.) 2.75 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 D1 S2 • DC/DC Converter • Load Switch SO-8 G2 G1 Top View Ordering Information: Si4532CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 D2 N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 30 - 30 Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TA = 25 °C 6.0 ID TA = 70 °C IDM Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current TC = 25 °C TA = 25 °C IS - 4.3 4.9 - 3.4 4.9b, c - 3.4b, c 3.9b, c - 2.7b, c - 15 - 2.3 1.5b, c - 1.5b, c 24 - 12 ISM Single Pulse Avalanche Current IAS 7 8 EAS 2.5 3.2 2.78 2.78 L = 0.1 mH TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C PD TA = 70 °C mJ 1.78 1.78 1.78b, c 1.78b, c 1.14b, c 1.14b, c TJ, Tstg Operating Junction and Storage Temperature Range A 24 2.3 Pulsed Source-Drain Current Single Pulse Avalanche Energy V ± 20 TC = 25 °C TC = 70 °C Unit W - 55 to 150 °C THERMAL RESISTANCE RATINGS N-Channel Parameter Maximum Junction-to-Ambient b, d Maximum Junction-to-Foot (Drain) P-Channel Symbol Typ. Max. Typ. Max. t  10 s RthJA 57 70 57 70 Steady State RthJF 37 45 37 45 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 120 °C/W (N-Channel) and 110 °C/W (P-Channel). Document Number: 64805 S11-0652-Rev. B, 11-Apr-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4532CDY Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA N-Ch 30 VGS = 0 V, ID = - 250 µA P-Ch - 30 ID = 250 µA N-Ch V 33 ID = - 250 µA P-Ch - 33 ID = 250 µA N-Ch - 5.8 mV/°C IID = - 250 µA P-Ch VDS = VGS, ID = 250 µA N-Ch 1.0 3.0 VDS = VGS, ID = - 250 µA P-Ch - 1.0 - 3.0 VDS = 0 V, VGS = ± 20 V 4.5 N-Ch 100 P-Ch - 100 VDS = 30 V, VGS = 0 V N-Ch 1 VDS = - 30 V, VGS = 0 V P-Ch -1 VDS = 30 V, VGS = 0 V, TJ = 55 °C N-Ch 5 VDS = - 30 V, VGS = 0 V, TJ = 55 °C P-Ch VDS =5 V, VGS = 10 V N-Ch 20 VDS = -5 V, VGS = - 10 V P-Ch - 12 V nA µA -5 A VGS = 10 V, ID = 3.5 A N-Ch 0.038 0.047 VGS = - 10 V, ID = - 3.5 A P-Ch 0.073 0.089 VGS = 4.5 V, ID = 2.8 A N-Ch 0.052 0.065 VGS = - 4.5 V, ID = - 2.5 A P-Ch 0.113 0.140 VDS = 15 V, ID = 2.5 A N-Ch 7 VDS = - 15 V, ID = - 3.5 A P-Ch 7  S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Crss Qg N-Channel VDS = 15 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 15 V, VGS = 0 V, f = 1 MHz 305 P-Ch 340 N-Ch 65 P-Ch 67 N-Ch 29 P-Ch 51 pF VDS = 15 V, VGS = 10 V, ID = 2.5 A N-Ch 6 9 VDS = - 15 V, VGS = - 10 V, ID = - 2.5 A P-Ch 7.8 12 N-Ch 2.75 4.5 N-Channel VDS = 15 V, VGS = 4.5 V ID = 2.5 A P-Ch 4.1 6.2 N-Ch 1.3 P-Ch 1.3 N-Ch 0.9 P-Ch 1.8 Qgs Gate-Drain Charge Qgd P-Channel VDS = - 15 V, VGS = - 4.5 V, ID = - 2.5 A Gate Resistance Rg f = 1 MHz www.vishay.com 2 N-Ch N-Ch 0.6 3.1 6.2 P-Ch 2.0 10 20 nC  Document Number: 64805 S11-0652-Rev. B, 11-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4532CDY Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Dynamic Symbol Test Conditions Min. Typ.a Max. Unit a Turn-On Delay Time td(on) tr Rise Time Turn-Off Delay Time td(off) tf Fall Time Turn-On Delay Time td(on) tr Rise Time Turn-Off Delay Time P-Channel VDD = - 15 V, RL = 15  ID  - 1 A, VGEN = - 10 V, Rg = 1  N-Channel VDD = 15 V, RL = 15  ID  1 A, VGEN = 4.5 V, Rg = 1  tf P-Channel VDD = - 15 V, RL = 15  ID  - 1 A, VGEN = - 4.5 V, Rg = 1  IS TC = 25 °C td(off) Fall Time N-Channel VDD = 15 V, RL = 15  ID  1 A, VGEN = 10 V, Rg = 1  N-Ch 7 11 P-Ch 5.5 10 N-Ch 12 18 P-Ch 13 25 N-Ch 14 25 P-Ch 17 30 N-Ch 6 10 P-Ch 7.7 15 N-Ch 16 30 60 P-Ch 40 N-Ch 16 30 P-Ch 40 60 N-Ch 9 18 P-Ch 20 40 N-Ch 9 18 P-Ch 17 30 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage ISM N-Ch 2.3 P-Ch - 2.3 N-Ch 24 P-Ch VSD A - 12 IS = 1.25 A N-Ch 0.8 1.2 IS = - 0.75 A P-Ch - 0.8 - 1.2 N-Ch 14 21 P-Ch 17 30 Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr N-Channel IF = 1.25 A, dI/dt = 100 A/µs, TJ = 25 °C N-Ch 6 10 P-Ch 11 20 Reverse Recovery Fall Time ta P-Channel IF = - 2.5 A, dI/dt = - 100 A/µs, TJ = 25 °C N-Ch 9 P-Ch 12 Reverse Recovery Rise Time tb N-Ch 5 P-Ch 5 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 64805 S11-0652-Rev. B, 11-Apr-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4532CDY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.2 24 1.0 VGS = 10 V thru 6 V I D - Drain Current (A) I D - Drain Current (A) 18 VGS = 5 V 12 0.8 0.6 TC = 25 °C 0.4 6 TC = 125 °C 0.2 VGS = 4 V TC = - 55 °C 0.0 0 0 2 4 6 8 0 10 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.10 400 Ciss 300 0.06 C - Capacitance (pF) R DS(on) - On-Resistance () 350 0.08 VGS = 4.5 V VGS = 10 V 0.04 250 200 150 100 Coss 0.02 Crss 50 0.00 0 0 2 4 6 8 10 12 14 16 0 10 15 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 30 1.7 10 ID = 2.5 A ID = 6 A VDS = 7.5 V 1.5 8 VDS = 15 V 6 VDS = 22.5 V 4 VGS = 10 V (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 5 1.3 VGS = 4.5 V 1.1 0.9 2 0 0 2 4 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 6 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 64805 S11-0652-Rev. B, 11-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4532CDY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.25 TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 25 °C 1 0.20 0.15 0.10 TJ = 125 °C 0.05 TJ = 25 °C 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 50 0.2 40 0.0 Power (W) V GS(th) Variance (V) ID = 250 µA - 0.2 30 20 - 0.4 10 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 0 0.001 150 0.01 0.1 1 10 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 I D - Drain Current (A) Limited by RDS(on)* 10 µs 100 µs 10 1 ms 1 10 ms TA = 25 °C Single Pulse 100 ms 0.1 BVDSS Limited 0.01 0.1 1 1s 10 s 100 s, DC 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 64805 S11-0652-Rev. B, 11-Apr-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4532CDY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 8 I D - Drain Current (A) 6 Package Limited 4 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 3.5 1.5 2.8 1.2 2.1 0.9 Power (W) Power (W) Current Derating* 1.4 0.6 0.3 0.7 0.0 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 64805 S11-0652-Rev. B, 11-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4532CDY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 120 °C/W 0.02 3. TJM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 64805 S11-0652-Rev. B, 11-Apr-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4532CDY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 15 2.0 VGS = 5 V VGS = 10 V thru 6 V I D - Drain Current (A) I D - Drain Current (A) 12 9 VGS = 4 V 6 1.5 1.0 TC = 25 °C 0.5 3 TC = 125 °C VGS = 3 V TC = - 55 °C 0 0.0 0.5 1.0 1.5 0.0 1.0 2.0 1.5 VDS - Drain-to-Source Voltage (V) 2.0 3.0 3.5 4.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.20 600 0.15 450 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2.5 VGS = 4.5 V 0.10 VGS = 10 V Ciss 300 0.05 150 0.00 0 Coss Crss 0 3 6 9 12 15 0 12 18 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 30 1.8 ID = 2.5 A ID = 3.2 A VDS = 15 V VGS = 10 V 1.6 8 VDS = 7.5 V 6 VDS = 22.5 V 4 2 1.4 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 6 VGS = 4.5 V 1.2 1.0 0.8 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 8 8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 64805 S11-0652-Rev. B, 11-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4532CDY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.4 10 ID = 3.5 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) TJ = 25 °C 1 TJ = 150 °C 0.1 TJ = - 50 °C 0.01 0.3 0.2 TJ = 125 °C 0.1 TJ = 25 °C 0.0 0.001 0.0 0.3 0.6 0.9 1.2 0 1.5 2 VSD - Source-to-Drain Voltage (V) 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.6 50 0.4 40 ID = 250 µA ID = 1 mA 0.2 0.0 -0.2 -0.4 - 50 Power (W) VGS(th) Variance (V) 4 30 20 10 - 25 0 25 50 75 100 125 150 0 0.001 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 I D - Drain Current (A) Limited by RDS(on)* 10 µs 100 µs 10 1 ms 1 10 ms TA = 25 °C Single Pulse 100 ms 0.1 1s 10 s 100 s, DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 64805 S11-0652-Rev. B, 11-Apr-11 www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4532CDY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 5 I D - Drain Current (A) 4 3 2 1 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 3.5 1.5 2.8 1.2 2.1 0.9 Power (W) Power (W) Current Derating* 1.4 0.6 0.3 0.7 0.0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 64805 S11-0652-Rev. B, 11-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4532CDY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 110 °C/W 0.02 3. TJM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64805. Document Number: 64805 S11-0652-Rev. B, 11-Apr-11 www.vishay.com 11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000