SIA911EDJ-T1-GE3

SiA911EDJ Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.101 at VGS = - 4.5 V - 4.5a 0.141 at VGS = - 2.5 V - 4.5a 0.192 at VGS = - 1.8 V -2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • Typical ESD Protection 4000 V Qg (Typ.) 4.9 nC APPLICATIONS • Load Switch, PA Switch and Battery Switch for Portable Devices PowerPAK SC-70-6 Dual S1 Marking Code 1 S1 2 G1 DHX 3 D1 Part # code D2 D1 6 S2 G1 G2 600 Ω XXX 600 Ω Lot Traceability and Date code D2 G2 5 2.05 mm 4 S2 2.05 mm D1 D2 P-Channel MOSFET P-Channel MOSFET Ordering Information: SiA911EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Drain Current (TJ = 150 °C) TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Maximum Power Dissipation ID TJ, Tstg Operating Junction and Storage Temperature Range d, e V - 4.5a - 1.6b, c 7.8 5 IS PD Unit - 4.5a - 4.5a - 3.6b, c - 2.9b, c - 10 IDM Pulsed Drain Current Soldering Recommendations (Peak Temperature) Limit - 20 ±8 1.9b, c 1.2b, c - 55 to 150 260 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t≤5s Steady State Symbol RthJA RthJC Typical 52 12.5 Maximum 65 16 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 110 °C/W. Document Number: 68927 S09-0389-Rev. B, 09-Mar-09 www.vishay.com 1 SiA911EDJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = - 250 µA VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea V - 21 mV/°C 2.1 - 0.4 -1 V ± 100 µA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≤ - 5 V, VGS = - 4.5 V - 10 µA A VGS = - 4.5 V, ID = - 2.7 A 0.083 0.101 RDS(on) VGS = - 2.5 V, ID = - 2.3 A 0.115 0.141 VGS = - 1.8 V, ID = - 1 A 0.153 0.192 gfs VDS = - 10 V, ID = - 2.7 A 7 VDS = - 10 V, VGS = - 8 V, ID = - 3.6 A 7.1 11 4.2 6.5 Ω S Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDS = - 10 V, VGS = - 4.5 V, ID = - 3.6 A 0.7 f = 1 MHz 600 VDD = - 10 V, RL = 3.5 Ω ID ≅ - 2.9 A, VGEN = - 4.5 V, Rg = 1 Ω 200 300 700 1100 tf 400 600 td(on) 32 50 70 105 990 1500 410 615 1.2 td(on) tr td(off) tr td(off) nC 92 VDD = - 10 V, RL = 3.5 Ω ID ≅ - 2.9 A, VGEN = - 8 V, Rg = 1 Ω tf Ω 140 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD TC = 25 °C - 4.5 - 10 IS = - 2.9 A, VGS = 0 V - 0.9 - 1.2 A V Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68927 S09-0389-Rev. B, 09-Mar-09 SiA911EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 103 20 TJ = 150 °C 102 IG - Gate Current (µA) IG - Gate Current (µA) 15 10 5 101 TJ = 25 °C 1 10 -1 10 -2 0 0 2 4 6 8 10 0 2 VGS - Gate-to-Source Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-to-Source Voltage Gate Current vs. Gate-to-Source Voltage 10 5 TC = - 55 °C VGS = 5 thru 2.5 V 4 I D - Drain Current (A) I D - Drain Current (A) 8 VGS = 2 V 6 4 VGS = 1.5 V 3 2 TC = 25 °C 2 1 TC = 125 °C VGS = 1 V, 0.5 V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 1.2 0.8 1.6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.0 8 0.35 ID = 3.6 A VGS - Gate-to-Source Voltage (V) VGS = 1.8 V R DS(on) - On-Resistance (Ω) 0.4 0.28 0.21 VGS = 2.5 V 0.14 VGS = 4.5 V 0.07 VDS = 10 V 6 4 VDS = 16 V 2 0 0.00 0 2 4 6 8 10 0 2 4 6 ID - Drain Current (A) Qg - Total Gate Charge (nC) On-Resistance vs. Drain Current and Gate Voltage Gate Charge Document Number: 68927 S09-0389-Rev. B, 09-Mar-09 8 www.vishay.com 3 SiA911EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 1.5 ID = - 2.7 A, VGS = - 2.5 V I S - Source Current (A) ID = - 2.7 A, VGS = - 4.5 V 1.3 (Normalized) R DS(on) - On-Resistance 1.4 1.2 1.1 ID = - 1 A, VGS = - 1.8 V 1.0 0.9 10 TJ = 25 °C TJ = 150 °C 1 0.8 0.7 - 50 0.1 - 25 0 25 50 75 100 125 150 0.0 TJ - Junction Temperature (°C) 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Soure-Drain Diode Forward Voltage 20 0.5 I D = 2.7 A 15 0.3 Power (W) R DS(on) - On-Resistance (Ω) 0.4 0.2 10 TJ = 125 °C 5 0.1 TJ = 25 °C 0.0 0 1 2 3 4 0 0.001 5 0.01 0.1 1 10 Limited by RDS(on)* ID = 250 µA 100 µs I D - Drain Current (A) 0.7 0.6 V GS(th) (V) 1000 Single Pulse Power, Junction-to-Ambient 0.8 0.5 1 1 ms 10 ms 100 ms 1 s 10 s DC 0.1 0.4 TA = 25 °C Single Pulse - 25 0 25 50 75 TJ - Temperature (°C) Threshold Voltage www.vishay.com 4 100 Pulse (s) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 0.3 - 50 10 100 125 150 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 68927 S09-0389-Rev. B, 09-Mar-09 SiA911EDJ Vishay Siliconix 8 8 6 6 Power Dissipation (W) ID - Drain Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Package limited 4 2 4 2 0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68927 S09-0389-Rev. B, 09-Mar-09 www.vishay.com 5 SiA911EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68927. www.vishay.com 6 Document Number: 68927 S09-0389-Rev. B, 09-Mar-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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