SIR844DP-T1-GE3

New Product SiR844DP Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0028 at VGS = 10 V 50a, g 0.0038 at VGS = 4.5 V 50a, g VDS (V) 25 Qg (Typ.) 29.5 nC PowerPAK® SO-8 S 6.15 mm 5.15 mm 1 S 2 APPLICATIONS S 3 G D D 7 D • Low-Side MOSFET - Server, Vcore - DC/DC 4 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New MOSFET Technology Optimized for Ringing Reduction in Switching Applications • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC D G 6 D 5 Bottom View S Ordering Information: SiR844DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation ID TC = 25 °C TA = 25 °C IS L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Unit V 50a, g 50g 30b, c 24b, c 70 IDM Pulsed Drain Current Continuous Source-Drain Diode Current Limit 25 ± 20 A 50g 4.5b, c 40 80 50 32 mJ 5.0b, c 3.2b, c - 55 to 150 260 W °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb, f Maximum Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 20 2.0 Maximum 25 2.5 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 70 °C/W. g. Package limited. Document Number: 64810 S09-0875-Rev. A, 18-May-09 www.vishay.com 1 New Product SiR844DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 25 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient V 20 ID = 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.6 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 25 V, VGS = 0 V 1 VDS = 25 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≥ 5 V, VGS = 10 V - 5.6 1.0 30 µA A VGS = 10 V, ID = 15 A 0.0022 0.0028 VGS = 4.5 V, ID = 10 A 0.0030 0.0038 VDS = 10 V, ID = 15 A 50 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 3215 VDS = 10 V, VGS = 0 V, f = 1 MHz 475 VDS = 10 V, VGS = 10 V, ID = 10 A VDS = 10 V, VGS = 4.5 V, ID = 10 A tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time f = 1 MHz VDD = 10 V, RL = 1 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 44 7.8 0.15 0.6 1.2 14 28 9 18 33 60 16 td(on) 30 55 VDD = 10 V, RL = 1 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω tf Fall Time 29.5 8 td(off) Turn-Off Delay Time 90 tf tr Rise Time 60 nC 9.7 td(on) Turn-On Delay Time pF 800 21 40 39 75 18 35 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current a IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 50 70 IS = 3 A IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.73 1.1 V 25 50 ns 15 30 nC 13 12 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 64810 S09-0875-Rev. A, 18-May-09 New Product SiR844DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 70 10 VGS = 10 V thru 4 V 8 VGS = 3 V I D - Drain Current (A) I D - Drain Current (A) 56 42 28 6 4 TC = 25 °C 14 2 TC = 125 °C 0 0.0 TC = - 55 °C 0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0040 4200 0.0035 3360 5 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) Ciss VGS = 4.5 V 0.0030 0.0025 VGS = 10 V 2520 1680 Coss 0.0020 840 Crss 0.0015 0 0 12 24 36 48 60 0 5 10 20 25 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current and Gate Voltage 1.8 10 ID = 15 A ID = 10 A 8 VDS = 10 V 6 VDS = 5 V 4 VDS = 15 V 1.5 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 15 VGS = 10 V VGS = 4.5 V 1.2 0.9 2 0 0 13 26 39 Qg - Total Gate Charge (nC) Gate Charge Document Number: 64810 S09-0875-Rev. A, 18-May-09 52 65 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product SiR844DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.025 100 ID = 15 A TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 25 °C 1 0.1 0.01 0.001 0.0 0.020 0.015 0.010 TJ = 125 °C 0.005 TJ = 25 °C 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 200 0.4 160 Power (W) VGS(th) Variance (V) 0.1 - 0.2 ID = 5 mA 120 80 ID = 250 µA - 0.5 40 - 0.8 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 Time (s) TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* I D - Drain Current (A) 10 10 ms 100 ms 1 1s 10 s 0.1 DC TA = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 64810 S09-0875-Rev. A, 18-May-09 New Product SiR844DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 110 I D - Drain Current (A) 88 Package Limited 66 44 22 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 60 2.5 48 2.0 36 1.5 Power (W) Power (W) Current Derating* 24 1.0 0.5 12 0.0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 64810 S09-0875-Rev. A, 18-May-09 www.vishay.com 5 New Product SiR844DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 70 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64810. www.vishay.com 6 Document Number: 64810 S09-0875-Rev. A, 18-May-09 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1