SiSH106DN
www.vishay.com
Vishay Siliconix
N-Channel 20 V (D-S) Fast Switching MOSFET
FEATURES
PowerPAK® 1212-8SH
• TrenchFET® power MOSFET
D
D
8
D
7
D
6
5
• 2.5 V rated RDS(on)
• PWM optimized
• 100 % Rg tested
0.9 mm
3.3
mm
1
3.3
1
2
S
3
S
4
S
G
mm
Top View
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
D
• Synchronous rectification
Bottom View
• Load switch
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = 4.5 V
0.0062
RDS(on) max. () at VGS = 2.5 V
0.0098
Qg typ. (nC)
ID (A)
Configuration
G
20
S
17.5
N-Channel MOSFET
19.5
Single
ORDERING INFORMATION
Package
PowerPAK 1212-8
Lead (Pb)-free and halogen-free
SiSH106DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
10 s
STEADY STATE
Drain-source voltage
VDS
20
20
Gate-source voltage
VGS
± 12
± 12
19.5
12.5
TA = 25 °C
Continuous drain current (TJ = 150 °C) a
TA = 70 °C
Pulsed drain current
Continuous source current (diode conduction)
a
Single avalanche current
Single avalanche energy
Maximum power dissipation a
L = 0.1 mH
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
ID
15.6
10
IDM
60
60
IS
3.2
1.3
IAS
30
30
EAS
45
45
3.8
1.5
2
0.8
PD
TJ, Tstg
-55 to +150
Soldering recommendations (peak temperature) b, c
UNIT
V
A
mJ
W
°C
260
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient a
Maximum junction-to-case (drain)
SYMBOL
t 10 s
Steady state
Steady state
RthJA
RthJC
TYPICAL
MAXIMUM
24
33
65
81
1.9
2.4
UNIT
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board
b. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8SH is a leadless package within the PowerPAK 1212-8 package
family. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at
the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S18-0684-Rev. A, 09-Jul-2018
Document Number: 79358
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSH106DN
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
VGS(th)
VDS = VGS, ID = 250 μA
0.6
-
1.5
V
Gate-body leakage
Gate threshold voltage
IGSS
VDS = 0 V, VGS = ± 12 V
-
-
± 100
nA
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
Forward transconductance a
Diode forward
voltage a
VDS = 20 V, VGS = 0 V
-
-
1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
-
-
5
μA
VDS 5 V, VGS = 4.5 V
40
-
-
A
VGS = 4.5 V, ID = 19.5 A
-
0.0051
0.0062
VGS = 2.5 V, ID = 15.5 A
-
0.0081
0.0098
gfs
VDS = 15 V, ID = 19.5 A
-
105
-
S
VSD
IS = 3.2 A, VGS = 0 V
-
0.8
1.2
V
-
17.5
27
-
6.6
-
-
2.8
-
0.7
1.4
2.1
-
25
40
-
15
25
-
50
75
-
12
20
-
30
60
RDS(on)
Dynamic b
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
VDS = 10 V, VGS = 4.5 V, ID = 19.5 A
Rg
f = 1 MHz
td(on)
tr
td(off)
Fall time
tf
Source-drain reverse recovery time
trr
VDD = 10 V, RL = 10
ID 1 A, VGEN = 10 V, Rg = 6
IF = 3.2 A, di/dt = 100 A/μs
nC
ns
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S18-0684-Rev. A, 09-Jul-2018
Document Number: 79358
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSH106DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
60
60
VGS = 10 thru 2.5 V
48
I D - Drain Current (A)
I D - Drain Current (A)
48
36
24
2V
12
36
24
TC = 125 °C
12
25 °C
- 55 °C
1.5 V
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
2.0
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2.5
3500
0.016
0.014
Ciss
2800
C - Capacitance (pF)
0.012
0.010
VGS = 2.5 V
0.008
R DS(on)
1.5
VDS - Drain-to-Source Voltage (V)
0.006
VGS = 4.5 V
2100
1400
0.004
Coss
700
0.002
0
0.000
0
10
30
20
40
50
60
Crss
0
15
20
VDS - Drain-to-Source Voltage (V)
Capacitance
On-Resistance vs. Drain Current
1.6
R DS(on) - On-Resistance (Normalized)
5
VGS - Gate-to-Source Voltage (V)
10
5
ID - Drain Current (A)
VDS = 10 V
ID = 19.5 A
4
3
2
1
0
0
4
8
12
16
20
1.4
VGS = 4.5 V
ID = 19.5 A
1.2
1.0
0.8
0.6
- 50
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S18-0684-Rev. A, 09-Jul-2018
Document Number: 79358
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSH106DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.024
60
ID = 5 A
0.016
TJ = 150 °C
10
0.012
ID = 19.5 A
R DS(on)
I S - Source Current (A)
0.020
TJ = 25 °C
0.008
0.004
1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
0
1.2
1
2
3
4
5
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
50
ID = 250 µA
40
0.0
Power (W)
V GS(th) Variance (V)
0.2
- 0.2
30
20
- 0.4
10
- 0.6
- 0.8
- 50
0
- 25
0
25
50
75
100
125
150
0.01
0.1
1
10
100
600
Time (s)
TJ - Temperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
IDM Limited
P(t) = 0.0001
Limited by
RDS(on)*
I D - Drain Current (A)
10
P(t) = 0.001
1
P(t) = 0.01
ID(on)
Limited
P(t) = 0.1
P(t) = 1
0.1
P(t) = 10
TA = 25 °C
Single Pulse
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which R DS(on) is specified
Safe Operating Area
S18-0684-Rev. A, 09-Jul-2018
Document Number: 79358
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSH106DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 65 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?79358.
S18-0684-Rev. A, 09-Jul-2018
Document Number: 79358
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
Case Outline for PowerPAK® 1212-SWLH
and PowerPAK® 1212-8SH
A
0.10 C
Z
D
8
7
6
5
1
2
3
4
D1
5
6
b
4
3
7
8
2
1
K
E
E1
K1
2x
L
B
0.10 C
2x
e
0.10 M C A B
0.05 M C
Pin 1 dot
0.10 C
A
C
0.08 C
A1 A3
DIM.
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.82
0.90
0.98
0.032
0.035
0.038
A1
0.00
-
0.05
0.000
-
0.002
A3
0.20 ref.
0.008 ref.
b
0.25
0.30
0.35
0.010
0.012
0.014
D
3.20
3.30
3.40
0.126
0.130
0.134
D1
2.15
2.25
2.35
0.085
0.089
0.093
E
3.20
3.30
3.40
0.126
0.130
0.134
E1
1.60
1.70
1.80
0.063
0.067
0.071
e
0.65 bsc.
K
0.76 ref.
0.030 ref.
K1
0.41 ref.
0.016 ref.
L
0.33
Z
0.43
0.525 ref.
0.026 bsc.
0.53
0.013
0.017
0.021
0.021 ref.
ECN: S20-0930-Rev. C, 07-Dec-2020
DWG: 6062
Revision: 07-Dec-2020
Document Number: 76384
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single
0.152
(3.860)
0.039
0.068
(0.990)
(1.725)
0.010
(0.255)
(2.390)
0.094
0.088
(2.235)
0.016
(0.405)
0.026
(0.660)
0.025
0.030
(0.635)
(0.760)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72597
Revision: 21-Jan-08
www.vishay.com
7
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Vishay
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Revision: 09-Jul-2021
1
Document Number: 91000