SISH114ADN-T1-GE3

SiSH114ADN www.vishay.com Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PowerPAK® 1212-8SH • TrenchFET® power MOSFET D D 8 D 7 D 6 5 • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 0.9 mm 3.3 mm 1 3.3 1 2 S 3 S 4 S G mm Top View APPLICATIONS D • Synchronous rectification Bottom View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 30 0.0075 0.0098 10.2 35 a, g Single G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 1212-8 SiSH114ADN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current Avalanche current Avalanche energy SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C L = 0.1 mH TC = 25 °C Continuous source-drain diode current TA = 25 °C TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e ID IDM IAS EAS IS PD TJ, Tstg LIMIT 30 ± 20 35 g 35 g 18 b, c 14.5 b, c 60 30 45 32 3.2 b, c 39 25 3.7 b, c 2.4 b, c -55 to +150 260 UNIT V A mJ A W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b, f t  10 s RthJA 26 34 °C/W 2.4 3.2 Maximum junction-to-case (drain) Steady state RthJC Notes a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 81 °C/W g. Package limited S18-1166-Rev. A, 26-Nov-2018 Document Number: 75172 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH114ADN www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 30 - - V - 33 - - -6 - Static Drain-source breakdown voltage VDS temperature coefficient VDS/TJ ID = 250 μA mV/°C VGS(th) temperature coefficient VGS(th)/TJ Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 1.2 - 2.5 V IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA VDS = 30 V, VGS = 0 V - - 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C - - 5 Gate-source leakage Zero gate voltage drain current Drain-source on-state resistance a Forward transconductance a IDSS RDS(on) gfs VGS = 10 V, ID = 18 A - 0.0062 0.0075 VGS = 4.5 V, ID = 16 A - 0.0081 0.0098 VDS = 15 V, ID = 18 A - 50 - - 1230 - - 275 - - 105 - μA  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 19 A pF - 21 32 - 10.2 20 - 3.9 - - 3.2 - 0.3 1.6 3.2 - 20 30 - 14 21 - 20 30 tf - 10 20 td(on) - 11 20 - 8 16 - 20 30 - 7 14 - - 32 - - 60 IS = 10 A, VGS = 0 V - 0.8 1.2 - 24 36 ns IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C - 20 30 nC - 16 - - 8 - Rg VDS = 15 V, VGS = 4.5 V, ID = 19 A f = 1 MHz td(on) tr td(off) tr td(off) VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 4.5 V, Rg = 1  VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  tf nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C A V ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing   Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-1166-Rev. A, 26-Nov-2018 Document Number: 75172 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH114ADN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 4 60 TC = - 55 °C VGS = 10 thru 4 V 30 3 I D - Drain Current (A) I D - Drain Current (A) 45 VGS = 3 V 2 TC = 25 °C 1 15 TC = 125 °C 0 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 0.0 10 0.6 1.2 1.8 2.4 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Output Characteristics 1600 0.012 Ciss 1200 0.009 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 3.0 VGS = 4.5 V VGS = 10 V 0.006 800 400 Coss Crss 0 0.003 0 20 40 60 ID - Drain Current (A) 80 100 0 6 12 18 24 VDS - Drain-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current and Gate Voltage 10 1.8 R DS(on) - On-Resistance (Normalized) ID = 18 A VGS - Gate-to-Source Voltage (V) 30 8 VDS = 15 V 6 VDS = 24 V 4 2 0 0 4 8 12 16 20 Qg - Total Gate Charge (nC) Gate Charge S18-1166-Rev. A, 26-Nov-2018 24 ID = 18 A 1.5 VGS = 10 V 1.2 VGS = 4.5 V 0.9 0.6 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 On-Resistance vs. Junction Temperature Document Number: 75172 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH114ADN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.020 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 100 10 TJ = 150 °C TJ = 25 °C 1 0.015 0.005 TJ = 25 °C 0.000 0.1 0.0 0.3 0.6 0.9 VSD - Source-to-Drain Voltage (V) 0 1.2 4 8 12 16 20 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.3 60 50 2.0 ID = 250 µA 40 1.7 Power (W) VGS(th) (V) TJ = 125 °C 0.010 1.4 30 20 1.1 0.8 - 50 10 - 25 0 25 50 75 100 125 0 0.001 150 TJ - Temperature (°C) 1 Time (s) Threshold Voltage Single Pulse Power (Junction-to-Ambient) 100 0.01 0.1 10 100 1000 Limited by RDS(on)* 100 µs I D - Drain Current (A) 10 1 ms 1 10 ms 100 ms 1 s, 10 s 0.1 TA = 25 °C Single Pulse DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S18-1166-Rev. A, 26-Nov-2018 Document Number: 75172 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH114ADN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 75 2.0 60 Power (W) I D - Drain Current (A) 1.5 45 Package Limited 30 1.0 0.5 15 0 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Current Derating a 150 0 25 50 75 100 125 TA - Ambient Temperature (°C) 150 Power Derating, Junction-to-Ambient Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S18-1166-Rev. A, 26-Nov-2018 Document Number: 75172 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH114ADN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Notes: 0.02 PDM 0.01 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 81 °C/W Single Pulse 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.001 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10 -4 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case                     Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75172. S18-1166-Rev. A, 26-Nov-2018 Document Number: 75172 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8 Double Cooling Case Outline 8 M1 7 M4 6 K1 5 D1 5 6 K1 7 8 K T3 E2 E T1 E1 T2 H T5 D M4 e 1 2 3 L M3 4 4 3 2 1 b Back side view A1 c A T4 M2 DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. A 0.51 0.56 0.61 0.020 0.022 0.024 A1 0.00 0.02 0.05 0.000 0.001 0.002 b 0.36 0.41 0.46 0.014 0.016 0.018 c 0.15 0.20 0.25 0.006 0.008 0.010 D 4.90 5.00 5.10 0.193 0.197 0.201 D1 3.71 3.76 3.81 0.146 0.148 0.150 e 1.27 BSC MAX. 0.050 BSC E 5.90 6.00 6.10 0.232 0.236 0.240 E1 3.60 3.65 3.70 0.142 0.144 0.146 E2 0.46 typ. 0.018 typ. H 0.49 0.54 0.59 0.019 0.021 0.023 K 1.22 1.27 1.32 0.048 0.050 0.052 K1 0.64 typ. 0.025 typ. L 0.49 0.54 0.59 0.019 0.021 0.023 M1 3.85 3.90 3.95 0.152 0.154 0.156 M2 2.74 2.79 2.84 0.108 0.110 0.112 M3 1.06 1.11 1.16 0.042 0.044 0.046 M4 0.56 typ. N 0.022 typ. 8 8 T1 4.51 4.56 4.61 0.178 0.180 0.182 T2 2.58 2.63 2.68 0.102 0.104 0.106 T3 1.88 1.93 1.98 0.074 0.076 0.078 T4 0.97 typ. 0.038 typ. T5 0.48 typ. 0.019 typ. ECN: T21-0014-Rev. B, 08-Feb-2021 DWG: 6048 Document Number: 75846 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 08-Feb-2021 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single 0.260 (6.61) 0.150 (3.81) 0.050 0.174 (4.42) 0.154 (1.27) 0.026 (0.66) (3.91) 0.024 (0.61) 0.050 0.032 0.040 (1.27) (0.82) (1.02) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72599 Revision: 21-Jan-08 www.vishay.com 15 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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