SISH434DN-T1-GE3

SiSH434DN www.vishay.com Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PowerPAK® 1212-8SH • TrenchFET® power MOSFET D D 8 D 7 D 6 5 • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 0.9 mm 3.3 mm 1 1 2 S 3 S 4 S G m .3 m 3 Top View APPLICATIONS D • POL Bottom View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration G 40 0.0076 0.0092 12.5 35 a Single S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 1212-8 SiSH434DN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current Avalanche current Avalanche energy SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C L = 0.1 mH TC = 25 °C Continuous source-drain diode current TA = 25 °C TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e LIMIT 40 ± 20 35 a 35 a 17.6 b, c 14.1 b, c 60 30 45 35 a 3.2 b, c 52 33 3.8 b, c 2 b, c -55 to +150 260 ID IDM IAS EAS IS PD TJ, Tstg UNIT V A mJ A W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT t  10 s RthJA 24 33 Maximum junction-to-ambient b, f °C/W Maximum junction-to-case (drain) Steady state RthJC 1.9 2.4 Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8SH is a leadless package within the PowerPAK 1212-8 package family. The end of the lead terminal is exposedcopper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 81 °C/W S18-0686-Rev. A, 09-Jul-2018 Document Number: 79242 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH434DN www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 40 - - V - 46 - - -5 - Static Drain-source breakdown voltage VDS temperature coefficient DVDS/TJ VGS(th) temperature coefficient DVGS(th)/TJ Gate-source threshold voltage ID = 250 μA mV/°C VGS(th) VDS = VGS , ID = 250 μA 1.2 - 2.2 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = 40 V, VGS = 0 V - - 1 VDS = 40 V, VGS = 0 V, TJ = 55 °C - - 5 VDS  5 V, VGS = 10 V 40 - - A  VGS = 10 V, ID = 16.2 A - 0.0063 0.0076 VGS = 4.5 V, ID = 14.7 A - 0.0077 0.0092 VDS = 15 V, ID = 16.2 A - 60 - - 1530 - - 240 - - 100 - - 25 40 - 12.5 19 VDS = 20 V, VGS = 4.5 V, ID = 16.2 A - 3.9 - - 3.9 - f = 1 MHz 0.2 1.3 2.6 - 20 30 - 15 25 μA S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time VDS = 20 V, VGS = 0 V, f = 1 MHz VDS = 20 V, VGS = 10 V, ID = 16.2 A td(on) Rise time tr Turn-off delay time td(off) Fall time Turn-on delay time Rise time - 25 40 tf - 12 20 td(on) - 10 15 tr Turn-off delay time td(off) Fall time VDD = 20 V, RL = 2  ID  10 A, VGEN = 4.5 V, Rg = 1  VDD = 20 V, RL = 2  ID  10 A, VGEN = 10 V, Rg = 1  tf pF nC  ns - 10 15 - 25 40 - 7 15 - - 43 - - 35 - 0.8 1.2 V - 30 45 ns - 33 50 nC - 20 - - 10 - Drain-Source Body Diode Characteristics Continuous source-drain diode current Pulse diode forward current a Body diode voltage IS TC = 25 °C ISM VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb IS = 10 A, VGS = 0 V IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C A ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing   Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-0686-Rev. A, 09-Jul-2018 Document Number: 79242 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH434DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 60 VGS = 10 V thru 4 V 16 I D - Drain Current (A) I D - Drain Current (A) 50 40 VGS = 3 V 30 20 12 8 TC = 25 °C 4 10 TC = 125 °C VGS = 2 V 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) TC = - 55 °C 0 0 0.0 3.0 0.5 1.5 2.0 2.5 3.0 Transfer Characteristics Output Characteristics 0.010 2100 0.009 1800 Ciss 0.008 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.0 VGS - Gate-to-Source Voltage (V) VGS = 4.5 V 0.007 VGS = 10 V 0.006 0.005 1500 1200 900 600 Coss 300 Crss 0.004 0 0 20 40 60 0 5 ID - Drain Current (A) 10 15 20 25 30 35 VDS - Drain-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current and Gate Voltage 2.0 10 ID = 16.2 A R DS(on) - On-Resistance (Normalized) ID = 16.2 A VGS - Gate-to-Source Voltage (V) 40 8 VDS = 10 V VDS = 20 V 6 VDS = 32 V 4 2 0 0 6 12 18 24 Qg - Total Gate Charge (nC) Gate Charge S18-0686-Rev. A, 09-Jul-2018 30 1.8 VGS = 10 V 1.6 1.4 VGS = 4.5 V 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 On-Resistance vs. Junction Temperature Document Number: 79242 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH434DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.020 TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 16.2 A TJ = 25 °C 10 0.016 0.012 TJ = 125 °C 0.008 TJ = 25 °C 0.004 0.000 1 0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 2 1.2 Source-Drain Diode Forward Voltage 4 6 8 VGS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Gate-to-Source Voltage 2.0 50 1.8 40 ID = 250 µA Power (W) VGS(th) (V) 1.6 1.4 30 20 1.2 10 1.0 0.8 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 TJ - Temperature (°C) 1 10 100 600 Time (s) Threshold Voltage Single Pulse Power (Junction-to-Ambient) 100 Limited by RDS(on)* 100 µs I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 10 s 0.1 TA = 25 °C Single Pulse 0.01 0.01 BVDSS Limited DC 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S18-0686-Rev. A, 09-Jul-2018 Document Number: 79242 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH434DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 60 100 50 40 Power (W) I D - Drain Current (A) 80 60 Package Limited 40 30 20 20 10 0 0 0 25 50 75 100 125 TC - Case Temperature (°C) Current Derating a 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S18-0686-Rev. A, 09-Jul-2018 Document Number: 79242 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH434DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 65 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4. Surface Mounted 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?79242. S18-0686-Rev. A, 09-Jul-2018 Document Number: 79242 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix Case Outline for PowerPAK® 1212-SWLH and PowerPAK® 1212-8SH A 0.10 C Z D 8 7 6 5 1 2 3 4 D1 5 6 b 4 3 7 8 2 1 K E E1 K1 2x L B 0.10 C 2x e 0.10 M C A B 0.05 M C Pin 1 dot 0.10 C A C 0.08 C A1 A3 DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.82 0.90 0.98 0.032 0.035 0.038 A1 0.00 - 0.05 0.000 - 0.002 A3 0.20 ref. 0.008 ref. b 0.25 0.30 0.35 0.010 0.012 0.014 D 3.20 3.30 3.40 0.126 0.130 0.134 D1 2.15 2.25 2.35 0.085 0.089 0.093 E 3.20 3.30 3.40 0.126 0.130 0.134 E1 1.60 1.70 1.80 0.063 0.067 0.071 e 0.65 bsc. K 0.76 ref. 0.030 ref. K1 0.41 ref. 0.016 ref. L 0.33 Z 0.43 0.525 ref. 0.026 bsc. 0.53 0.013 0.017 0.021 0.021 ref. ECN: S20-0930-Rev. C, 07-Dec-2020 DWG: 6062 Revision: 07-Dec-2020 Document Number: 76384 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.010 (0.255) (2.390) 0.094 0.088 (2.235) 0.016 (0.405) 0.026 (0.660) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72597 Revision: 21-Jan-08 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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