SISH112DN-T1-GE3

SiSH112DN www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) Fast Switching MOSFET FEATURES PowerPAK® 1212-8SH • TrenchFET® power MOSFET D D 8 D 7 D 6 5 • 100 % Rg tested • Material categorization:  for definitions of compliance please see www.vishay.com/doc?99912 0.9 mm 3.3 mm 1 1 2 S 3 S 4 S G m .3 m 3 Top View PRODUCT SUMMARY 30 RDS(on) max. () at VGS = 10 V 0.0075 RDS(on) max. () at VGS = 4.5 V 0.0082 Qg typ. (nC) D • Synchronous rectification • Load switch       Bottom View VDS (V) APPLICATIONS G S N-Channel MOSFET 18 ID (A) 17.8 Configuration Single ORDERING INFORMATION Package PowerPAK 1212-8 Lead (Pb)-free and halogen-free SiSH112DN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL STEADY STATE 10 S Drain-source voltage VDS 30 30 Gate-source voltage VGS ±12 ±12 Continuous drain current (TJ = 150 °C) a TC = 25 °C TC = 70 °C Pulsed drain current Continuous source current (diode conduction) a Single avalanche current Single avalanche energy Maximum power dissipation a Operating junction and storage temperature range Soldering recommendations (peak temperature) b, c L = 0.1 mH TC = 25 °C TC = 70 °C 17.8 11.3 14.2 9.1 IDM 60 60 1.3 ID IS 3.2 IAS 20 20 EAS 20 20 3.8 1.5 2 0.8 PD TJ, Tstg -50 to +150 260 UNIT V A mJ W °C Notes a. Surface mounted on 1" x 1" FR4 board b. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8SH is a leadless package within the PowerPAK 1212-8 package family. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S18-0706-Rev. A, 16-Jul-2018 Document Number: 79345 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH112DN www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL t  10 s Maximum junction-to-ambient a MAXIMUM 24 33 RthJA Steady state Maximum junction-to-foot (drain) TYPICAL Steady state RthJC 65 81 1.9 2.4 UNIT °C/W Note a. Surface mounted on 1" x 1" FR4 board SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static VGS(th) VDS = VGS, ID = 250 μA 0.6 - 1.5 V Gate-body leakage Gate threshold voltage IGSS VDS = 0 V, VGS = ±12 V - - ±100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a RDS(on) VDS = 30 V, VGS = 0 V - - 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C - - 5 μA VDS  5 V, VGS = 10 V 40 - - A VGS = 10 V, ID = 17.8 A - 0.0060 0.0075 VGS = 4.5 V, ID = 17 A - 0.0065 0.0082  Forward transconductance a gfs VDS = 15 V, ID = 17.8 A - 97 - S Diode forward voltage a VSD IS = 3.2 A, VGS = 0 - 0.7 1.2 V - 2610 - - 340 - Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss - 145 - Total gate charge Qg - 18 27 - 6.2 - - 3.1 - 0.5 1.2 1.8 - 10 15 - 10 15 - 65 100 Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Turn-on delay time Rise time Turn-off delay time Rg VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 4.5 V, ID = 17.8 A f = 1 MHz td(on) tr td(off) VDD = 15 V, RL = 15  ID  1 A, VGEN = 10 V, Rg = 6  Fall time tf - 10 15 Body diode reverse recovery time trr - 30 60 Body diode reverse recovery charge Qrr - 18 - IF = 3.2 A, di/dt = 100 A/μs pF nC  ns nC Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing      Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-0706-Rev. A, 16-Jul-2018 Document Number: 79345 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH112DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 60 60 VGS = 10 V thru 3 V 48 I D - Drain Current (A) I D - Drain Current (A) 48 36 2.5 V 24 12 36 24 TC = 125 °C 12 25 °C - 55 °C 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) 0 0.0 5 0.5 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) 2.5 Transfer Characteristics Output Characteristics 0.012 3500 3000 R DS(on) - On-Resistance (Ω) Ciss C - Capacitance (pF) 0.009 VGS = 4.5 V 0.006 VGS = 10 V 0.003 2500 2000 1500 1000 Coss 500 15 30 45 60 ID - Drain Current (A) 0 6 12 18 24 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 30 1.6 10 R DS(on) - On-Resistance (Normalized) ID = 18.9 A VGS - Gate-to-Source Voltage (V) Crss 0 0.000 0 8 VDS = 15 V 6 4 2 0 0 10 20 30 40 Qg - Total Gate Charge (nC) Gate Charge S18-0706-Rev. A, 16-Jul-2018 50 1.4 VGS = 10 V ID = 17.8 A 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 On-Resistance vs. Junction Temperature Document Number: 79345 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH112DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 60 0.05 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 18.9 A TJ = 150 °C 10 TJ = 25 °C 0.04 0.03 0.02 0.01 0 1 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 0 Source-Drain Diode Forward Voltage 4 6 8 VGS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Gate-to-Source Voltage 0.4 50 ID = 250 µA 0.2 40 0.0 Power (W) V GS(th) Variance (V) 2 - 0.2 30 20 - 0.4 10 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 0 0.01 150 0.1 1 10 100 600 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 IDM Limited Limited by RDS(on)* P(t) = 0.0001 I D - Drain Current (A) 10 P(t) = 0.001 ID(on) Limited 1 P(t) = 0.01 P(t) = 0.1 P(t) = 1 TC = 25 °C Single Pulse 0.1 P(t) = 10 DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient S18-0706-Rev. A, 16-Jul-2018 Document Number: 79345 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH112DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 65 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case                     Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?79345. S18-0706-Rev. A, 16-Jul-2018 Document Number: 79345 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix Case Outline for PowerPAK® 1212-SWLH and PowerPAK® 1212-8SH A 0.10 C Z D 8 7 6 5 1 2 3 4 D1 5 6 b 4 3 7 8 2 1 K E E1 K1 2x L B 0.10 C 2x e 0.10 M C A B 0.05 M C Pin 1 dot 0.10 C A C 0.08 C A1 A3 DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.82 0.90 0.98 0.032 0.035 0.038 A1 0.00 - 0.05 0.000 - 0.002 A3 0.20 ref. 0.008 ref. b 0.25 0.30 0.35 0.010 0.012 0.014 D 3.20 3.30 3.40 0.126 0.130 0.134 D1 2.15 2.25 2.35 0.085 0.089 0.093 E 3.20 3.30 3.40 0.126 0.130 0.134 E1 1.60 1.70 1.80 0.063 0.067 0.071 e 0.65 bsc. K 0.76 ref. 0.030 ref. K1 0.41 ref. 0.016 ref. L 0.33 Z 0.43 0.525 ref. 0.026 bsc. 0.53 0.013 0.017 0.021 0.021 ref. ECN: S20-0930-Rev. C, 07-Dec-2020 DWG: 6062 Revision: 07-Dec-2020 Document Number: 76384 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.010 (0.255) (2.390) 0.094 0.088 (2.235) 0.016 (0.405) 0.026 (0.660) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72597 Revision: 21-Jan-08 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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