SIZF916DT-T1-GE3

SiZF916DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES • TrenchFET® Gen IV power MOSFET • SkyFET® low-side MOSFET with integrated Schottky • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • • • • • PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration CHANNEL-1 CHANNEL-2 30 0.00400 0.00670 7 40 30 0.00125 0.00175 29.3 60 CPU core power Computer / server peripherals POL Synchronous buck converter Telecom DC/DC N-Channel 1 MOSFET GHS/G1 G1Return/S1 VSW/S1-D2 Schottky Diode GLS/G2 N-Channel 2 MOSFET Dual VIN/D1 GND/S2 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAIR 6 x 5F SiZF916DT-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e PD CHANNEL-1 30 +20, -16 40 a 40 a 23 b, c 18.4 b, c 130 22 2.8 b, c 15 11.3 26.6 17 3.4 b, c 2.2 b, c TJ, Tstg CHANNEL-2 30 +16, -12 60 a 60 a 45 b, c 36 b, c 110 60 a 7 b, c 25 31 60 38 4 b, c 2.6 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL CHANNEL-1 TYP. 30 3.8 MAX. 37 4.7 CHANNEL-2 TYP. 25 1.7 MAX. 31 1.7 UNIT t  10 s RthJA Maximum junction-to-ambient b, f °C/W Maximum junction-to-case (source) Steady state RthJC Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 77 °C/W for channel-1 and 68 °C/W for channel-2 S17-1591 Rev. A, 16-Oct-17 Document Number: 75698 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF916DT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. Ch-1 30 - - Ch-2 30 - - Ch-1 1.1 - 2.4 Ch-2 1.1 - 2.2 VDS = 0 V, VGS = +20 V, -16 V Ch-1 - - ± 100 VDS = 0 V, VGS = +16 V, -12 V Ch-2 - - ± 100 Ch-1 - - 1 Ch-2 - 35 350 Ch-1 - - 5 Ch-2 - 250 3000 Ch-1 20 - - Ch-2 20 - - UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage VDS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 250 μA IGSS VDS = 30 V, VGS = 0 V Zero Gate voltage drain current IDSS VDS = 30 V, VGS = 0 V, TJ = 55 °C On-state drain current b Drain-source on-state resistance b Forward transconductance b ID(on) RDS(on) gfs VDS  5 V, VGS = 10 V VGS = 10 V, ID = 10 A Ch-1 - 0.00290 0.00400 VGS = 10 V, ID = 10 A Ch-2 - 0.00090 0.00125 VGS = 4.5 V, ID = 5 A Ch-1 - 0.00470 0.00680 0.00125 0.00175 VGS = 4.5 V, ID = 5 A Ch-2 - VDS = 10 V, ID = 20 A Ch-1 - VDS = 10 V, ID = 20 A Ch-2 53 - 91 - - V nA μA A  S Dynamic a Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Channel-2 VDS = 15 V, VGS = 0 V, f = 1 MHz Crss/Ciss ratio Qg Gate-drain charge Output charge Gate resistance S17-1591 Rev. A, 16-Oct-17 1060 Ch-2 - 4320 - Ch-1 - 600 - Ch-2 - 1840 - Ch-1 - 45 - Ch-2 - 260 - Ch-1 - 0.042 0.085 Qgs Qgd Qoss Rg 0.060 0.120 Ch-1 - 14.6 22 Ch-2 - 62 95 7 11 29.3 45 Ch-1 Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 10 A Gate-source charge - Ch-2 VDS = 15 V, VGS = 10 V, ID = 10 A Total gate charge Ch-1 Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 10 A VDS = 15 V, VGS = 0 V f = 1 MHz Ch-2 - Ch-1 - 3 - Ch-2 - 10.2 - Ch-1 - 1.5 - Ch-2 - 5.2 - Ch-1 - 14 - Ch-2 - 46 - Ch-1 0.2 1 2 Ch-2 0.1 0.41 0.82 pF nC  Document Number: 75698 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF916DT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. Ch-1 - 17 35 Ch-2 - 30 60 Ch-1 - 45 90 Ch-2 - 60 120 Ch-1 - 20 40 Ch-2 - 45 90 Ch-1 - 10 20 Ch-2 - 20 40 Ch-1 - 10 20 Ch-2 - 15 30 Ch-1 - 5 10 Ch-2 - 25 50 Ch-1 - 20 40 Ch-2 - 40 80 Ch-1 - 5 10 Ch-2 - 10 20 Ch-1 - - 22 Ch-2 - - 60 Ch-1 - - 130 Ch-2 - - 110 IS = 5 A, VGS = 0 V Ch-1 - 0.8 1.2 IS = 3 A, VGS = 0 V Ch-2 - 0.38 0.58 Ch-1 - 32 70 Ch-2 - 55 110 Ch-1 - 24 50 Ch-2 - 72 150 Ch-1 - 18 - Ch-2 - 27 - Ch-1 - 14 - Ch-2 - 28 - UNIT Dynamic a Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time Channel-1 VDD = 15 V, RL = 3  ID  5 A, VGEN = 4.5 V, Rg = 1  Channel-2 VDD = 15 V, RL = 3  ID  5 A, VGEN = 4.5 V, Rg = 1  tf Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time Channel-1 VDD = 15 V, RL = 3  ID  5 A, VGEN = 10 V, Rg = 1  Channel-2 VDD = 15 V, RL = 3  ID  5 A, VGEN = 10 V, Rg = 1  tf ns Drain-Source Body Diode Characteristics Continuous source-drain diode current Pulse diode forward current a Body diode voltage IS ISM VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time TC = 25 °C Channel-1 IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C Channel-2 IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C tb A V ns nC ns Notes a. Guaranteed by design, not subject to production testing b. Pulse test; pulse width  300 μs, duty cycle  2 % Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-1591 Rev. A, 16-Oct-17 Document Number: 75698 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF916DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 10000 80 VGS = 10 V thru 4 V 40 100 20 60 1000 1st line 2nd line 60 2nd line ID - Drain Current (A) 1000 1st line 2nd line 2nd line ID - Drain Current (A) 80 TC = 25 °C 40 100 20 VGS = 3 V TC = 125 °C TC = -55 °C 0 0 10 0 0.5 1 1.5 2 2.5 3 10 0 1 2 VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics 5 Axis Title Axis Title 10000 1800 10000 1000 0.004 100 VGS = 10 V 900 Coss 600 100 300 0 10 0 20 40 60 80 Crss 0 100 10 0 5 10 15 20 25 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current Capacitance Axis Title 1.6 ID = 10 A 8 VDS = 15 V 1000 1st line 2nd line 6 VDS = 7.5 V VDS = 24 V 100 2 0 10 3 6 9 12 15 2nd line RDS(on) - On-Resistance (Normalized) 10000 4 30 Axis Title 10 0 1000 Ciss 10000 ID = 5 A VGS = 10 V 1.4 1000 1.2 VGS = 4.5 V 1.0 100 0.8 0.6 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S17-1591 Rev. A, 16-Oct-17 1st line 2nd line 0.002 1200 1st line 2nd line VGS = 4.5 V 2nd line C - Capacitance (pF) 1500 0.006 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 4 VDS - Drain-to-Source Voltage (V) 2nd line 0.008 2nd line VGS - Gate-to-Source Voltage (V) 3 Document Number: 75698 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF916DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 0.010 10000 10000 ID = 5 A 1000 TJ = 25 °C 1 100 0.1 0.008 1000 0.006 TJ = 125 °C 0.004 100 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 25 °C 0.002 0 10 0 10 0 1.4 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 50 10000 2.0 1.8 10000 40 1000 1000 2nd line Power (W) 1.4 1.2 30 1st line 2nd line 1.6 1st line 2nd line 2nd line VGS(th) (V) 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 10 1st line 2nd line 2nd line IS - Source Current (A) TJ = 150 °C 20 100 ID = 250 μA 100 10 1.0 0.8 10 -50 -25 0 25 50 75 0 0.001 100 125 150 0.01 0.1 1 10 100 10 1000 TJ - Temperature (°C) 2nd line Time (s) 2nd line Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title 1000 ID(ON) Limited Limited by RDS(on) (1) IDM Limited 10000 100 μs 10 1000 1st line 2nd line 2nd line ID - Drain Current (A) 100 1 ms 10 ms 1 100 ms100 1s 10 s DC TA = 25 °C Single pulse 0.1 0.01 0.01 (1) 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S17-1591 Rev. A, 16-Oct-17 Document Number: 75698 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF916DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 35 10000 80 10000 25 Package limited 100 20 1000 1st line 2nd line 40 2nd line Power (W) 1000 1st line 2nd line 2nd line ID - Drain Current (A) 30 60 20 15 100 10 5 0 10 0 25 50 75 100 125 150 0 10 0 25 50 75 100 125 TC - Case Temperature (°C) 2nd line TC - Case Temperature (°C) 2nd line Current Derating a Power, Junction-to-Case 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S17-1591 Rev. A, 16-Oct-17 Document Number: 75698 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF916DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 1 10000 0.2 Notes: 0.1 PDM 1000 0.1 t1 0.05 t2 t 1. Duty cycle, D = t1 2 2. Per unit base = RthJA = 77 °C/W 0.02 3. TJM - TA = PDMZthJA 0.001 100 (t) 4. Surface mounted Single pulse 0.01 0.0001 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty Cycle = 0.5 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.2 0.1 100 0.05 0.02 Single pulse 0.1 0.0001 10 0.001 0.01 0.1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case S17-1591 Rev. A, 16-Oct-17 Document Number: 75698 7 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF916DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 100 10000 10000 VGS = 10 V thru 3 V 40 100 20 1000 60 TC = 25 °C 40 100 20 VGS = 2 V 1st line 2nd line 1000 60 2nd line ID - Drain Current (A) 80 1st line 2nd line 2nd line ID - Drain Current (A) 80 TC = 125 °C TC = -55 °C 0 0 10 0 0.5 1 1.5 2 2.5 3 10 0 0.5 1 1.5 2 2.5 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics 3 Axis Title Axis Title 10000 6000 10000 0.0016 0.0008 VGS = 10 V 100 0.0004 4500 3000 Coss 100 1500 Crss 0 10 20 40 60 80 0 100 10 0 5 10 20 25 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current Capacitance Axis Title 1.3 ID = 10 A 8 VDS = 15 V 1000 1st line 2nd line 6 VDS = 7.5 V VDS = 24 V 100 2 0 10 15 30 45 60 2nd line RDS(on) - On-Resistance (Normalized) 10000 4 30 Axis Title 10 0 15 10000 ID = 5 A VGS = 10 V 1.2 1000 1.1 VGS = 4.5 V 1.0 100 0.9 0.8 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S17-1591 Rev. A, 16-Oct-17 1st line 2nd line 0 2nd line VGS - Gate-to-Source Voltage (V) 1000 Ciss 1st line 2nd line 1000 2nd line C - Capacitance (pF) 0.0012 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) VGS = 4.5 V Document Number: 75698 8 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF916DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 0.004 10000 ID = 5 A 1000 TJ = 25 °C 1 100 0.1 0.003 1000 0.002 TJ = 125 °C 100 0.001 TJ = 25 °C 0 10 0 0.2 0.4 0.6 0.8 1.0 10 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 10-1 10000 50 10-2 10000 40 10-3 1000 2nd line Power (W) 10-5 1000 30 1st line 2nd line 1st line 2nd line VDS = 30 V 10-4 Ir (A) 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 10 1st line 2nd line 2nd line IS - Source Current (A) TJ = 150 °C 20 100 VDS = 10 V 100 10 10-6 10-7 10 -50 -25 0 25 50 75 0 0.001 100 125 150 0.01 0.1 TJ - Temperature (°C) 2nd line 1 10 100 10 1000 Time (s) 2nd line Reverse Current (Schottky) Single Pulse Power, Junction-to-Ambient Axis Title 1000 IDM Limited Limited by RDS(on) (1) ID(ON) Limited 10000 1000 100 μs 10 1 ms 10 ms 100 ms 100 1 1s 10 s DC 0.1 TA = 25 °C Single pulse 0.01 0.01 (1) 1st line 2nd line 2nd line ID - Drain Current (A) 100 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S17-1591 Rev. A, 16-Oct-17 Document Number: 75698 9 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF916DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 10000 80 150 60 100 1st line 2nd line 1000 2nd line Power (W) 1000 1st line 2nd line 2nd line ID - Drain Current (A) 200 40 100 50 Package limited 0 10 0 25 50 100 20 75 100 125 150 0 10 0 25 50 75 100 125 TC - Case Temperature (°C) 2nd line TC - Case Temperature (°C) 2nd line Current Derating a Power, Junction-to-Case 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S17-1591 Rev. A, 16-Oct-17 Document Number: 75698 10 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF916DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 1 10000 0.2 Notes: 0.1 PDM 1000 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 t1 0.05 t2 t 1. Duty cycle, D = t1 2 2. Per unit base = RthJA = 68 °C/W 0.02 3. TJM - TA = PDMZthJA 0.001 (t) 4. Surface mounted Single pulse 0.01 0.0001 100 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty Cycle = 0.5 0.2 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.1 0.05 0.02 100 Single pulse 0.1 0.0001 10 0.001 0.01 0.1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75698. S17-1591 Rev. A, 16-Oct-17 Document Number: 75698 11 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix A1 K3 4x 5 6 7 8 K L1 A D L 0.10 C 2x L2 PowerPAIR® 6 x 5 F Case Outline K8 2x K4 E1 K1 D1 K5 D2 D3 K7 2x K6 E2 K2 E K7 0.10 C 4 L 2x Pin 1 index 3 e 6x Top side view 0.10 C A C e1 2x 1 b 8x 0.1 M C A B 0.05 M C A1 Back side view c b1 2 e 2 0.08 C See datail A DIMENSION Datail A (Scale 3:1) MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.028 0.030 0.031 A1 0.00 - 0.10 0.000 - 0.004 b 0.35 0.41 0.46 0.014 0.016 0.018 b1 0.38 ref. 0.015 ref. c 0.15 0.20 0.25 0.006 0.008 D 4.90 5.00 5.10 0.193 0.197 0.201 D1 3.26 3.31 3.36 0.128 0.130 0.132 D2 4.20 4.30 4.40 0.165 0.169 0.173 D3 4.15 4.20 4.25 0.163 0.165 0.167 E 5.90 6.00 6.10 0.232 0.236 0.240 E1 2.50 2.55 2.60 0.098 0.100 0.102 E2 0.87 0.92 0.97 0.034 0.036 0.038 e 1.27 BSC e1 0.010 0.050 BSC 3.81 BSC 0.150 BSC K 0.52 0.57 0.62 0.020 0.022 0.024 K1 0.69 0.74 0.79 0.027 0.029 0.031 K2 0.60 0.65 0.70 0.024 0.026 0.028 K3 0.39 BSC 0.015 BSC K4 0.50 0.55 0.60 0.020 0.022 0.024 K5 0.25 0.30 0.35 0.010 0.012 0.014 K6 0.40 0.45 0.50 0.016 0.018 0.020 K7 0.35 0.40 0.45 0.014 0.016 0.018 K8 0.30 0.35 0.40 0.012 0.014 0.016 L 0.33 0.43 0.53 0.013 0.017 0.021 L1 1.31 1.36 1.41 0.052 0.054 0.056 L2 0.20 ref. 0.008 ref. ECN: T20-0097-Rev. C, 25-Feb-2020 DWG: 6043 Note • Millimeters will govern Document Number: 67777 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 25-Feb-2020 PAD Pattern www.vishay.com Vishay Siliconix Recommended Minimum PAD for PowerPAIR® 6 x 5 0.28 (0.011) 0.53 (0.021) 2.835 (0.112) 0.45 (0.018) 2.12 (0.083) 2.67 (0.105) 4 (0.157) (0, 0) 0.55 (0.022) 0.66 (0.026) 1.21 (0.048) 0.92 (0.036) 4 (0.157) 2.13 (0.084) 0.44 (0.017) 2.835 (0.112) 1.905 (0.075) Pin 1 0.53 (0.021) 1.27 (0.050) 0.66 (0.026) 0.61 (0.024) Dimensions in millimeters (inch) Note • Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue. Revision: 16-Feb-15 1 Document Number: 67480 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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