SIZF928DT-T1-GE3

SiZF928DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES • TrenchFET® Gen IV power MOSFET • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • • • • • PRODUCT SUMMARY CHANNEL-1 VDS (V) CHANNEL-2 30 30 RDS(on) max. (Ω) at VGS = 10 V 0.00245 0.00075 RDS(on) max. (Ω) at VGS = 4.5 V 0.00380 0.00120 Qg typ. (nC) 8.5 35 ID (A) a 88 248 Configuration CPU core power Computer / server peripherals POL Synchronous buck converter Telecom DC/DC N-Channel 1 MOSFET VIN/D1 GHS/G1 G1Return/S1 VSW/S1-D2 GLS/G2 N-Channel 2 MOSFET GND/S2 Dual ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAIR 6 x 5F SiZF928DT-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e PD CHANNEL-1 30 +16, -12 88 70 33 b, c 26 b, c 150 26 3.6 b, c 20 20 28 18 3.9 b, c 2.5 b, c TJ, Tstg CHANNEL-2 30 +16, -12 248 198 61 b, c 49 b, c 400 67 7.4 b, c 50 125 74 47 4.5 b, c 2.9 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL CHANNEL-1 TYP. 25 3.5 MAX. 32 4.4 CHANNEL-2 TYP. 22 1.3 MAX. 28 1.7 UNIT t ≤ 10 s RthJA Maximum junction-to-ambient b, f °C/W Maximum junction-to-case (source) Steady state RthJC Notes a. TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 65 °C/W for channel-1 and 65 °C/W for channel-2 S21-0032 Rev. A, 18-Jan-2021 Document Number: 63037 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF928DT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. Ch-1 30 - - Ch-2 30 - - Ch-1 1 - 2 UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage VDS VGS(th) IGSS VGS = 0 V, ID = 1 mA VDS = VGS, ID = 250 μA Ch-2 1 - 2 VDS = 0 V, VGS = +16 V, -12 V Ch-1 - - ± 100 VDS = 0 V, VGS = +16 V, -12 V Ch-2 - - ± 100 Ch-1 - - 1 Ch-2 - - 1 Ch-1 - - 5 VDS = 24 V, VGS = 0 V Zero Gate voltage drain current IDSS VDS = 24 V, VGS = 0 V, TJ = 55 °C On-state drain current b Drain-source on-state resistance b Forward transconductance b ID(on) RDS(on) gfs VDS ≥ 5 V, VGS = 10 V Ch-2 - - 5 Ch-1 20 - - Ch-2 20 - - VGS = 10 V, ID = 10 A Ch-1 - 0.00180 0.00245 VGS = 10 V, ID = 15 A Ch-2 - 0.00053 0.00075 VGS = 4.5 V, ID = 5 A Ch-1 - 0.00270 0.00380 VGS = 4.5 V, ID = 10 A Ch-2 - 0.00082 0.00120 VDS = 15 V, ID = 40 A Ch-1 - VDS = 15 V, ID = 50 A Ch-2 97 - 175 - V nA μA A Ω S Dynamic a Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Channel-2 VDS = 15 V, VGS = 0 V, f = 1 MHz Crss/Ciss ratio Total gate charge 1265 - 5650 - Ch-1 - 455 - Ch-2 - 1796 - Ch-1 - 30 - Ch-2 - 125 - Ch-1 - 0.023 0.046 0.023 0.046 Ch-2 Qg Ch-1 - 18.5 28 VDS = 15 V, VGS = 10 V, ID = 10 A Ch-2 - 77 116 VDS = 15 V, VGS = 4.5 V, ID = 10 A Ch-1 8.5 12.8 VDS = 15 V, VGS = 4.5 V, ID = 10 A Ch-2 - 35 53 Ch-1 - 3.9 - Ch-2 - 17 - Ch-1 - 1.6 - Ch-2 - 5.2 - Ch-1 - 13 - Ch-2 - 51 - Ch-1 0.2 1 2 Ch-2 0.15 0.75 1.5 Gate-source charge Qgs Gate-drain charge Qgd Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 10 A Output charge Qoss VDS = 15 V, VGS = 0 V S21-0032 Rev. A, 18-Jan-2021 - Ch-2 VDS = 15 V, VGS = 10 V, ID = 10 A Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 10 A Gate resistance Ch-1 Rg f = 1 MHz pF nC Ω Document Number: 63037 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF928DT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. Ch-1 - 20 40 Ch-2 - 38 80 Ch-1 - 92 185 Ch-2 - 95 190 Ch-1 - 22 45 Ch-2 - 46 90 Ch-1 - 6 15 Ch-2 - 17 35 Ch-1 - 11 20 UNIT Dynamic a Turn-on delay time td(on) Rise time Turn-off delay time tr td(off) Fall time Turn-on delay time tf td(on) Rise time Turn-off delay time tr td(off) Fall time tf Channel-1 VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω Channel-2 VDD = 15 V, RL = 3 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω Channel-1 VDD = 15 V, RL = 3 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω Channel-2 VDD = 15 V, RL = 3 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω Ch-2 - 18 40 Ch-1 - 5 10 Ch-2 - 48 100 Ch-1 - 22 45 Ch-2 - 45 90 Ch-1 - 5 10 Ch-2 - 10 20 Ch-1 - - 26 Ch-2 - - 67 Ch-1 - - 150 ns Drain-Source Body Diode Characteristics Continuous source-drain diode current Pulse diode forward current a Body diode voltage IS ISM VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time TC = 25 °C tb Ch-2 - - 400 IS = 10 A, VGS = 0 V Ch-1 - 0.78 1.1 IS = 3 A, VGS = 0 V Ch-2 - 0.75 1.1 Channel-1 IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C Channel-2 IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C Ch-1 - 20 40 Ch-2 - 50 100 Ch-1 - 10 20 Ch-2 - 50 100 Ch-1 - 11.5 - Ch-2 - 26 - Ch-1 - 8.5 - Ch-2 - 24 - A V ns nC ns Notes a. Guaranteed by design, not subject to production testing b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-0032 Rev. A, 18-Jan-2021 Document Number: 63037 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF928DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 150 120 10000 VGS = 10 V thru 4 V 60 100 VGS = 3 V 30 90 1000 1st line 2nd line 90 2nd line ID - Drain Current (A) 1000 1st line 2nd line 60 TC = 25 °C 100 30 TC = 125 °C 10 0 0.5 1.0 1.5 2.0 2.5 10 0 3.0 1 2 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title Axis Title 10000 10000 10 000 1000 VGS = 4.5 V 0.003 VGS = 10 V 0.002 100 2nd line C - Capacitance (pF) 0.004 1st line 2nd line 2nd line (Ω) RDS(on) - On-Resistance 4 VDS - Drain-to-Source Voltage (V) 0.005 Ciss 1000 1000 Coss 100 100 Crss 0.001 10 0 0 30 60 90 120 10 10 0 150 ID - Drain Current (A) 5 10 8 VDS = 15 V 1000 1st line 2nd line 6 VDS = 7.5 V VDS = 24 V 100 2 10 0 15 20 2nd line RDS(on) - On-Resistance (Normalized) ID = 10 A 10 30 10000 1.6 10000 5 25 Axis Title Axis Title 0 20 Capacitance 10 4 15 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 2nd line VGS - Gate-to-Source Voltage (V) 3 1st line 2nd line 0 TC = -55 °C 0 ID = 10 A VGS = 10 V 1.4 1000 1.2 VGS = 4.5 V 1.0 100 0.8 10 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S21-0032 Rev. A, 18-Jan-2021 1st line 2nd line 2nd line ID - Drain Current (A) 120 Document Number: 63037 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF928DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 TJ = 150 °C 40 1 TJ = 25 °C 100 1000 30 1st line 2nd line 1000 2nd line P - Power (W) 10 1st line 2nd line 2nd line IS - Source Current (A) 10000 50 20 100 0.1 10 10 0.01 0.2 0.4 0.6 0.8 1.0 0 0.001 1.2 0.01 0.1 1 10 1000 100 VSD - Source-to-Drain Voltage (V) t - Time (s) Source-Drain Diode Forward Voltage Single Pulse Power, Junction-to-Ambient Axis Title Axis Title 10000 1.8 10000 1000 IDM limited Limited by RDS(on)a 100 1000 1st line 2nd line 1.4 1.2 100 ID = 250 μA 1.0 2nd line ID - Drain Current (A) 1.6 2nd line VGS(th) (V) 10 ID(ON) limited 1000 100 μs 10 1 ms 10 ms 1 100 ms 100 1s 10 s 0.1 TA = 25 °C, single pulse 10 0.8 -50 -25 0 25 50 75 0.01 0.01 100 125 150 TJ - Junction Temperature (°C) 1st line 2nd line 0 DC BVDSS limited 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient Threshold Voltage Note a. VGS > minimum VGS at which RDS(on) is specified Axis Title 10000 0.012 1000 0.008 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 0.01 0.006 TJ = 125 °C 0.004 100 0.002 TJ = 25 °C 10 0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage S21-0032 Rev. A, 18-Jan-2021 Document Number: 63037 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF928DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 40 10000 40 100 1000 1st line 2nd line 60 2nd line P - Power (W) 30 1000 1st line 2nd line 2nd line ID - Drain Current (A) 80 20 100 10 20 0 10 0 25 50 75 100 125 150 10 0 0 25 50 75 100 125 TC - Ambient Temperature (°C) TC - Ambient Temperature (°C) Current Derating a Power, Junction-to-Case 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S21-0032 Rev. A, 18-Jan-2021 Document Number: 63037 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF928DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 1 10000 Notes 0.2 1000 PDM 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.1 0.1 t1 0.05 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 65 °C/W 0.02 3. TJM - TA = PDMZthJA 0.001 (t) 4. Surface mounted Single pulse 0.01 0.0001 100 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty cycle = 0.5 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.2 0.1 100 0.05 0.02 Single pulse 0.1 0.0001 10 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case S21-0032 Rev. A, 18-Jan-2021 Document Number: 63037 7 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF928DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 250 10000 250 VGS = 10 V thru 4 V 100 100 VGS = 3 V 1000 150 1st line 2nd line 1000 150 2nd line ID - Drain Current (A) 200 1st line 2nd line 2nd line ID - Drain Current (A) 200 100 TC = 25 °C 100 50 50 TC = 125 °C 10 0 0 0.5 1.0 1.5 2.0 2.5 TC = -55 °C 10 0 0 3.0 1 2 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title Axis Title 10000 0.0010 10000 10 000 VGS = 4.5 V Ciss VGS = 10 V 0.0004 100 1000 1000 Coss 1st line 2nd line 1000 0.0006 2nd line C - Capacitance (pF) 0.0008 1st line 2nd line Crss 100 100 0.0002 10 0 0 50 100 150 200 10 10 0 250 5 10 On-Resistance vs. Drain Current Capacitance Axis Title VDS = 15 V 1000 1st line 2nd line 6 VDS = 24 V 100 2 10 0 20 40 60 80 2nd line RDS(on) - On-Resistance (Normalized) 8 VDS = 7.5 V 30 10000 1.6 10000 ID = 10 A 2nd line VGS - Gate-to-Source Voltage (V) 25 VDS - Drain-to-Source Voltage (V) Axis Title 0 20 ID - Drain Current (A) 10 4 15 ID = 15 A VGS = 10 V 1.4 1000 1.2 VGS = 4.5 V 1.0 100 0.8 10 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S21-0032 Rev. A, 18-Jan-2021 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 3 Document Number: 63037 8 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF928DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 10000 100 80 1 TJ = 25 °C 100 1000 60 1st line 2nd line 1000 2nd line P - Power (W) 10 1st line 2nd line 2nd line IS - Source Current (A) TJ = 150 °C 40 100 0.1 20 0 0.2 0.4 0.6 0.8 1.0 0 0.001 1.2 0.1 1 10 10 1000 100 VSD - Source-to-Drain Voltage (V) t - Time (s) Source-Drain Diode Forward Voltage Single Pulse Power, Junction-to-Ambient Axis Title Limited by RDS(on) Axis Title 10000 1.8 1000 100 1000 1st line 2nd line 1.4 1.2 100 ID = 250 μA 2nd line ID - Drain Current (A) 1.6 2nd line VGS(th) (V) 0.01 IDM limited ID(ON) limited 100 μs 1 ms 10 100 ms 1s 10 s TA = 25 °C, single pulse 10 0.8 -50 -25 0 25 50 75 0.01 0.01 100 125 150 TJ - Junction Temperature (°C) 1000 10 ms 1 0.1 1.0 10000 1st line 2nd line 10 0.01 100 DC BVDSS limited 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient Threshold Voltage Note a. VGS > minimum VGS at which RDS(on) is specified Axis Title 10000 0.0030 ID = 15 A 1000 0.0020 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 0.0025 0.0015 TJ = 125 °C 0.0010 0.0005 100 TJ = 25 °C 10 0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage S21-0032 Rev. A, 18-Jan-2021 Document Number: 63037 9 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF928DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 300 250 1000 150 100 100 1000 60 1st line 2nd line 200 2nd line P - Power (W) 80 1st line 2nd line 2nd line ID - Drain Current (A) 10000 100 10000 40 100 20 50 0 10 0 25 50 75 100 125 150 10 0 0 25 50 75 100 125 TC - Ambient Temperature (°C) TC - Ambient Temperature (°C) Current Derating a Power, Junction-to-Case 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S21-0032 Rev. A, 18-Jan-2021 Document Number: 63037 10 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZF928DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 1 10000 Notes 0.2 1000 PDM 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.1 0.1 t1 0.05 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 65 °C/W 0.02 3. TJM - TA = PDMZthJA 0.001 (t) 4. Surface mounted Single pulse 0.01 0.0001 100 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 10000 1000 0.2 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.1 0.05 0.02 100 Single pulse 0.1 0.0001 10 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63037. S21-0032 Rev. A, 18-Jan-2021 Document Number: 63037 11 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix A1 K3 4x 5 6 7 8 K L1 A D L 0.10 C 2x L2 PowerPAIR® 6 x 5 F Case Outline K8 2x K4 E1 K1 D1 K5 D2 D3 K7 2x K6 E2 K2 E K7 0.10 C 4 L 2x Pin 1 index 3 e 6x Top side view 0.10 C A C e1 2x 1 b 8x 0.1 M C A B 0.05 M C A1 Back side view c b1 2 e 2 0.08 C See datail A DIMENSION Datail A (Scale 3:1) MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.028 0.030 0.031 A1 0.00 - 0.10 0.000 - 0.004 b 0.35 0.41 0.46 0.014 0.016 0.018 b1 0.38 ref. 0.015 ref. c 0.15 0.20 0.25 0.006 0.008 D 4.90 5.00 5.10 0.193 0.197 0.201 D1 3.26 3.31 3.36 0.128 0.130 0.132 D2 4.20 4.30 4.40 0.165 0.169 0.173 D3 4.15 4.20 4.25 0.163 0.165 0.167 E 5.90 6.00 6.10 0.232 0.236 0.240 E1 2.50 2.55 2.60 0.098 0.100 0.102 E2 0.87 0.92 0.97 0.034 0.036 0.038 e 1.27 BSC e1 0.010 0.050 BSC 3.81 BSC 0.150 BSC K 0.52 0.57 0.62 0.020 0.022 0.024 K1 0.69 0.74 0.79 0.027 0.029 0.031 K2 0.60 0.65 0.70 0.024 0.026 0.028 K3 0.39 BSC 0.015 BSC K4 0.50 0.55 0.60 0.020 0.022 0.024 K5 0.25 0.30 0.35 0.010 0.012 0.014 K6 0.40 0.45 0.50 0.016 0.018 0.020 K7 0.35 0.40 0.45 0.014 0.016 0.018 K8 0.30 0.35 0.40 0.012 0.014 0.016 L 0.33 0.43 0.53 0.013 0.017 0.021 L1 1.31 1.36 1.41 0.052 0.054 0.056 L2 0.20 ref. 0.008 ref. ECN: T20-0097-Rev. C, 25-Feb-2020 DWG: 6043 Note • Millimeters will govern Document Number: 67777 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 25-Feb-2020 PAD Pattern www.vishay.com Vishay Siliconix Recommended Minimum PAD for PowerPAIR® 6 x 5 0.28 (0.011) 0.53 (0.021) 2.835 (0.112) 0.45 (0.018) 2.12 (0.083) 2.67 (0.105) 4 (0.157) (0, 0) 0.55 (0.022) 0.66 (0.026) 1.21 (0.048) 0.92 (0.036) 4 (0.157) 2.13 (0.084) 0.44 (0.017) 2.835 (0.112) 1.905 (0.075) Pin 1 0.53 (0.021) 1.27 (0.050) 0.66 (0.026) 0.61 (0.024) Dimensions in millimeters (inch) Note • Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue. Revision: 16-Feb-15 1 Document Number: 67480 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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