SQ1912EH
www.vishay.com
Vishay Siliconix
Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFET
FEATURES
SOT-363
SC-70 Dual (6 leads)
D1
6
G2
5
• TrenchFET® power MOSFET
S2
4
• AEC-Q101 qualified
• 100 % Rg tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
1
S1
Top View
2
G1
3
D2
D1
D2
Marking Code: 9H
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 4.5 V
0.280
RDS(on) () at VGS = 2.5 V
0.360
RDS(on) () at VGS = 1.8 V
0.450
ID (A)
G2
S1
0.8
Configuration
Package
G1
20
S2
Dual
SC-70
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
SYMBOL
VDS
LIMIT
20
Gate-source voltage
VGS
±8
Continuous drain current a
TC = 25 °C
ID
TC = 125 °C
Continuous source current (diode conduction) a
Pulsed drain current b
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation b
L = 0.1 mH
TC = 25 °C
Operating junction and storage temperature range
0.8
IS
0.8
3
IAS
3.8
EAS
7.2
TJ, Tstg
V
0.8
IDM
PD
TC = 125 °C
UNIT
1.5
0.5
A
mJ
W
-55 to +175
°C
SYMBOL
LIMIT
UNIT
RthJA
220
RthJF
100
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-foot (drain)
PCB mount
c
°C/W
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
S17-0425 Rev. B, 27-Mar-17
Document Number: 67394
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1912EH
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance b
VDS
VGS = 0, ID = 250 μA
20
-
-
VGS(th)
VDS = VGS, ID = 250 μA
0.45
0.6
1.5
VDS = 0 V, VGS = ± 8 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 20 V
-
-
1
VGS = 0 V
VDS = 20 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 20 V, TJ = 175 °C
-
-
150
VGS = 4.5 V
VDS 5 V
1.5
-
0.280
VGS = 4.5 V
ID = 1.2 A
-
0.200
VGS = 4.5 V
ID = 1.2 A, TJ = 125 °C
-
-
0.423
VGS = 4.5 V
ID = 1.2 A, TJ = 175°C
-
-
0.510
VGS = 2.5 V
ID = 1 A
-
0.261
0.360
VGS = 1.8 V
ID = 0.2 A
VDS = 10 V, ID = 0.5 A
-
0.320
0.450
-
2.6
-
-
49
75
V
nA
μA
A
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance d
Turn-on delay time c
Rise time c
Turn-off delay
Rg
Fall time c
VDS = 10 V, f = 1 MHz
VGS = 4.5 V
VDS = 10 V, ID = 1.2 A
f = 1 MHz
td(on)
tr
time c
VGS = 0 V
td(off)
VDD = 10 V, RL = 20
ID 0.5 A, VGEN = 4.5 V, Rg = 1
tf
-
22
32
-
8
12
-
0.76
1.15
-
0.13
-
-
0.33
-
5.5
11.1
22.2
-
3
5
-
21
31
-
19
29
-
17
25
pF
nC
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed current a
ISM
Forward voltage
VSD
IF = 0.5 A, VGS = 0
-
-
3
A
-
0.8
1.2
V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-0425 Rev. B, 27-Mar-17
Document Number: 67394
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1912EH
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2.0
2.0
VGS = 5 V thru 1.5 V
1.6
ID - Drain Current (A)
ID - Drain Current (A)
1.6
1.2
VGS = 1 V
0.8
0.4
1.2
TC = 25 °C
0.8
0.4
TC = 125 °C
VGS = 0.5 V
0.0
TC = - 55 °C
0.0
0.0
0.2
0.4
0.6
0.8
1.0
VDS - Drain-to-Source Voltage (V)
0.0
0.5
1.0
1.5
2.0
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
5
2.5
0.5
TC = - 55 °C
RDS(on) - On-Resistance (Ω)
gfs - Transconductance (S)
4
TC = 25 °C
3
TC = 125 °C
2
0.4
VGS = 1.8 V
0.3
VGS = 2.5 V
0.2
VGS = 4.5 V
0.1
1
0.0
0
0.0
0.2
0.4
0.6
0.8
0.0
1.0
0.4
0.8
1.2
1.6
2.0
ID - Drain Current (A)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Transconductance
5
80
VGS - Gate-to-Source Voltage (V)
ID = 1.2 A
VDS = 10 V
C - Capacitance (pF)
60
Ciss
40
Coss
20
Crss
4
3
2
1
0
0
0
5
10
15
20
0.0
0.2
0.4
0.6
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
S17-0425 Rev. B, 27-Mar-17
0.8
Document Number: 67394
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1912EH
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
ID = 1.2 A
1.7
VGS = 2.5 V
IS - Source Current (A)
RDS(on) - On-Resistance (Normalized)
2.0
1.4
VGS = 4.5 V
1.1
1
0.1
TJ = 25 °C
0.01
0.8
0.5
- 50 - 25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
0.001
0.0
175
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
Source Drain Diode Forward Voltage
On-Resistance vs. Junction Temperature
1.0
0.5
0.8
0.3
VGS(th) Variance (V)
RDS(on) - On-Resistance (Ω)
TJ = 150 °C
0.6
0.4
TJ = 150 °C
0.1
ID = 5 mA
- 0.1
ID = 250 μA
- 0.3
0.2
TJ = 25 °C
- 0.5
- 50 - 25
0.0
0
1
2
3
4
5
0
25
50
75
100
VGS - Gate-to-Source Voltage (V)
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
125
150
175
100
26
IDM Limited
10
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
ID = 10 mA
25
24
23
22
Limited by RDS(on)*
1
10 ms
100 ms
1 s, 10 s, DC
0.1
BVDSS Limited
21
20
- 50 - 25
TC = 25 °C
Single Pulse
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S17-0425 Rev. B, 27-Mar-17
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Document Number: 67394
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1912EH
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P DM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R thJA = 220 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4
t1
t2
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67394.
S17-0425 Rev. B, 27-Mar-17
Document Number: 67394
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SCĆ70:
6ĆLEADS
MILLIMETERS
6
5
Dim
A
A1
A2
b
c
D
E
E1
e
e1
L
4
E1 E
1
2
3
-B-
e
b
e1
D
-Ac
A2 A
L
A1
Document Number: 71154
06-Jul-01
INCHES
Min
Nom
Max
Min
Nom
Max
0.90
–
1.10
0.035
–
0.043
–
–
0.10
–
–
0.004
0.80
–
1.00
0.031
–
0.039
0.15
–
0.30
0.006
–
0.012
0.10
–
0.25
0.004
–
0.010
1.80
2.00
2.20
0.071
0.079
0.087
1.80
2.10
2.40
0.071
0.083
0.094
1.15
1.25
1.35
0.045
0.049
0.053
0.65BSC
0.026BSC
1.20
1.30
1.40
0.047
0.051
0.055
0.10
0.20
0.30
0.004
0.008
0.012
7_Nom
7_Nom
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5550
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead
0.067
0.026
(0.648)
0.045
(1.143)
0.096
(2.438)
(1.702)
0.016
0.026
0.010
(0.406)
(0.648)
(0.241)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
www.vishay.com
18
Document Number: 72602
Revision: 21-Jan-08
VISHAY SILICONIX
www.vishay.com
Power MOSFETs
Application Note AN917
Dual-Channel LITTLE FOOT ® 6-Pin SC-70 MOSFET Copper Leadframe Version
Recommended Pad Pattern and Thermal Performance 175 °C Rated Part
INTRODUCTION
The new dual 6-pin SC-70 package with a copper leadframe
enables improved on-resistance values and enhanced
thermal performance as compared to the existing 3-pin and
6-pin packages with Alloy 42 leadframes. These devices are
intended for small to medium load applications where a
miniaturized package is required. Devices in this package
come in a range of on-resistance values, in n-channel and
p-channel versions. This technical note discusses pin-outs,
package outlines, pad patterns, evaluation board layout,
and thermal performance for the dual-channel version.
87 (mil)
26 (mil)
6
5
4
96 (mil)
71 (mil)
48 (mil)
23 (mil)
PIN-OUT
Figure 1 shows the pin-out description and pin 1
identification for the dual-channel SC-70 device in the 6-pin
configuration. Both n-and p-channel devices are available in
this package – the drawing example below illustrates the
p-channel device.
61 (mil)
1
2
3
0.0 (mil)
8 (mil)
26 (mil)
SOT-363
SC-70 (6-LEADS)
16 (mil)
S1
1
6
D1
G1
2
5
G2
D2
3
4
S2
Top View
Fig. 1
For package dimensions see outline drawing SC-70
(6-Leads) (www.vishay.com/doc?71154)
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (www.vishay.com/doc?72286) for the SC-70
6-pin basic pad layout and dimensions. This pad pattern is
sufficient for the low-power applications for which this
package is intended. Increasing the drain pad pattern
(figure 2) yields a reduction in thermal resistance and is a
preferred footprint.
Revision: 15-Apr-13
EVALUATION BOARD FOR THE DUAL-CHANNEL
SC70-6
The 6-pin SC-70 evaluation board (EVB) shown in figure 3
measures 0.6 in. by 0.5 in. The copper pad traces are the
same as described in the previous section, Basic Pad
Patterns. The board allows for examination from the outer
pins to the 6-pin DIP connections, permitting test sockets to
be used in evaluation testing.
The thermal performance of the dual 6-pin SC-70 has been
measured on the EVB, comparing both the copper and Alloy
42 leadframes. This test was then repeated using the
1-inch2 PCB with dual-side copper coating.
A helpful way of displaying the thermal performance of the
6-pin SC-70 dual copper leadframe is to compare it to the
traditional Alloy 42 version.
Document Number: 75130
1
For technical questions, contact: powermosfettechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
APPLICATION NOTE
BASIC PAD PATTERNS
Fig. 2 SC-70 (6 leads) Dual
Application Note AN917
www.vishay.com
Vishay Siliconix
Dual-Channel LITTLE FOOT® 6-Pin SC-70 MOSFET Copper Leadframe Version
Recommended Pad Pattern and Thermal Performance 175 °C Rated Part
Front of Board SC70-6
Back of Board SC70-6
S1
D1
G1
G2
D2
S2
vishay.com
SC70−6 DUAL
Fig. 3
THERMAL PERFORMANCE
COOPER LEADFRAME
Junction-to-Foot Thermal Resistance
(the Package Performance)
ROOM AMBIENT 25 °C
Thermal performance for the dual SC-70 6-pin package is
measured as junction-to-foot thermal resistance, in which
the “foot” is the drain lead of the device as it connects with
the body. The junction-to-foot thermal resistance for this
device is typically 80 °C/W, with a maximum thermal
resistance of approximately 100 °C/W. This data compares
favorably with another compact, dual-channel package
- the dual TSOP-6 - which features a typical thermal
resistance of 75 °C/W and a maximum of 90 °C/W.
Power Dissipation for 175 °C Rated Part
The typical RJA for the dual-channel 6-pin SC-70 with a
copper leadframe is 224 °C/W steady-state, compared to
413 °C/W for the Alloy 42 version. All figures are based on
the 1-inch2 FR4 test board. The following example shows
how the thermal resistance impacts power dissipation
for the dual 6-pin SC-70 package at varying ambient
temperatures.
Alloy 42 Leadframe
ALLOY 42 LEADFRAME
APPLICATION NOTE
ROOM AMBIENT 25 °C
PD
T J(max.) - TA
R
JA
T J(max.) - TA
R
JA
PD
T J(max.) - TA
R
JA
PD
175 °C - 25 °C
224 °C/W
PD
175 °C - 60 °C
224 °C/W
PD
669 mW
PD
513 mW
Although they are intended for low-power applications,
devices in the 6-pin SC-70 dual-channel configuration will
handle power dissipation in excess of 0.5 W.
TESTING
To further aid the comparison of copper and Alloy 42
leadframes, Figures 4 and 5 illustrate the dual-channel 6-pin
SC-70 thermal performance on two different board sizes
and pad patterns. The measured steady-state values of
RJA for the dual 6-pin SC-70 with varying leadframes are as
follows:
LITTLE FOOT 6-PIN SC-70
ELEVATED AMBIENT 60 °C
PD
T J(max.) - TA
R
JA
PD
175 °C - 25 °C
413 °C/W
PD
175 °C - 60 °C
413 °C/W
PD
363 mW
PD
278 mW
Revision: 15-Apr-13
PD
ELEVATED AMBIENT 60 °C
1) Minimum recommended pad
pattern on the EVB board (see fig. 3).
1-inch2
2) Industry standard
PCB
with maximum copper both sides.
ALLOY 42
COPPER
518 °C/W
344 °C/W
413 °C/W
224 °C/W
The results indicate that designers can reduce thermal
resistance (JA) by 34 % simply by using the copper
leadframe device as opposed to the Alloy 42 version. In this
example, a 174 °C/W reduction was achieved without an
increase in board area. If an increase in board size is
feasible, a further 120 °C/W reduction can be obtained by
utilizing a 1-inch2. PCB area.
Document Number: 75130
2
For technical questions, contact: powermosfettechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note AN917
www.vishay.com
Vishay Siliconix
Dual-Channel LITTLE FOOT® 6-Pin SC-70 MOSFET Copper Leadframe Version
Recommended Pad Pattern and Thermal Performance 175 °C Rated Part
Dual:
Sx19xxEDH or Sx19xxEEH
Compl.:
Sx15xxEDH or Sx15xxEEH
500
500
400
400
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
The dual copper leadframe versions have the following
suffix:
300
Alloy 42
200
Copper
100
300
Alloy
42
200
100
Copper
0
0
10-5
10-4
10-3
10-2
10-1
1
10
100
1000
Time (s)
APPLICATION NOTE
Fig. 4 Dual SC70-6 Thermal Performance on EVB
Revision: 15-Apr-13
10-5
10-4
10-3
10-2
10-1
1
10
100
1000
Time (s)
Fig. 5 Dual SC70-6 Comparison on 1-inch2 PCB
Document Number: 75130
3
For technical questions, contact: powermosfettechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2022
1
Document Number: 91000
工商网监
湘ICP备2023018690号
