SQ2310ES
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Vishay Siliconix
Automotive N-Channel 20 V (D-S) 175 °C MOSFET
FEATURES
SOT-23 (TO-236)
•
•
•
•
D
3
TrenchFET® Power MOSFET
AEC-Q101 Qualified c
100 % Rg and UIS Tested
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
2
S
D
1
G
Top View
PRODUCT SUMMARY
VDS (V)
G
20
RDS(on) (Ω) at VGS = 4.5 V
0.030
RDS(on) (Ω) at VGS = 2.5 V
0.034
RDS(on) (Ω) at VGS = 1.8 V
0.038
ID (A)
S
N-Channel MOSFET
6
Configuration
Single
ORDERING INFORMATION
Package
SOT-23
Lead (Pb)-free and halogen-free
SQ2310ES
(for detailed order number please see www.vishay.com/doc?79771)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
SYMBOL
VDS
LIMIT
20
Gate-source voltage
VGS
±8
Continuous drain current
TC = 25 °C
TC = 125 °C
Continuous source current (diode conduction)
Pulsed drain current
a
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation a
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
ID
V
6
3.5
IS
2.5
IDM
24
IAS
10
EAS
5
PD
UNIT
2
0.6
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
RthJA
175
RthJF
75
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-foot (drain)
PCB mountb
°C/W
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. When mounted on 1" square Pcb (Fr-4 material)
c. Parametric verification ongoing
S21-1074-Rev. C, 15-Nov-2021
Document Number: 67036
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2310ES
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
VDS
VGS = 0 V, ID = 250 μA
20
-
-
VGS(th)
VDS = VGS, ID = 250 μA
0.4
0.6
1
VDS = 0 V, VGS = ± 8 V
IGSS
-
-
± 100
VGS = 0 V
VDS = 20 V
-
-
1
-
-
50
150
Zero gate voltage drain current
IDSS
VGS = 0 V
VDS = 20 V, TJ = 125 °C
VGS = 0 V
VDS = 20 V, TJ = 175 °C
-
-
On-state drain current a
ID(on)
VGS = 4.5 V
VDS ≥ 5 V
10
-
-
VGS = 4.5 V
ID = 4 A
-
0.024
0.030
VGS = 4.5 V
ID = 4 A, TJ = 125 °C
-
-
0.045
VGS = 4.5V
ID = 5 A, TJ = 175 °C
-
-
0.054
VGS = 2.5 V
ID = 3.8 A
-
0.027
0.034
VGS = 1.8 V
ID = 3.6 A
Drain-source on-state resistance a
Forward transconductance b
RDS(on)
gfs
VDS = 15 V, ID = 4 A
-
0.034
0.038
-
25
-
-
387
485
-
80
100
-
37
46
V
nA
μA
A
Ω
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Rg
Turn-on delay time
c
Rise time c
Turn-off delay time c
Fall time c
VGS = 0 V
VDS = 10 V, f = 1 MHz
-
4.5
8.5
-
0.4
-
-
0.7
-
f = 1 MHz
6
12
18
-
7
11
VDD = 10 V, RL = 2.5 Ω
ID ≅ 4 A, VGEN = 4.5 V, Rg = 1 Ω
-
8
12
-
21
32
-
9
14
VGS = 4.5 V
VDS = 10 V, ID = 5 A
td(on)
tr
td(off)
tf
pF
nC
Ω
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed current a
ISM
Forward voltage
VSD
IF = 2.8 A, VGS = 0 V
-
-
24
A
-
0.75
1.2
V
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S21-1074-Rev. C, 15-Nov-2021
Document Number: 67036
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2310ES
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
18
20
VGS = 5 V thru 2 V
15
VGS = 1.5 V
ID - Drain Current (A)
ID - Drain Current (A)
16
12
8
4
9
TC = 25 °C
6
3
VGS = 1.0 V
1
2
3
4
VDS - Drain-to-Source Voltage (V)
TC = 125 °C
TC = - 55 °C
0
0.0
0
0
12
5
0.5
1.0
1.5
2.0
2.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2.0
35
TC = - 55 °C
28
gfs - Transconductance (S)
ID - Drain Current (A)
1.6
1.2
TC = 25 °C
0.8
0.4
TC = 125 °C
21
14
7
TC = - 55 °C
TC = 125 °C
0.0
0.0
TC = 25 °C
0
0.4
0.8
1.2
1.6
2.0
0
1
2
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
6
7
Transconductance
0.10
600
500
C - Capacitance (pF)
0.08
RDS(on) - On-Resistance (Ω)
3
4
5
ID - Drain Current (A)
0.06
VGS = 1.8 V
0.04
VGS = 2.5 V
0.02
VGS = 4.5 V
Ciss
400
300
200
Coss
100
Crss
0
0
0
4
8
12
16
ID - Drain Current (A)
On-Resistance vs. Drain Current
S21-1074-Rev. C, 15-Nov-2021
20
0
4
8
12
16
VDS - Drain-to-Source Voltage (V)
20
Capacitance
Document Number: 67036
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2310ES
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.0
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
5
ID = 5 A
VDS = 10 V
4
3
2
1
1
2
3
4
Qg - Total Gate Charge (nC)
5
1.1
0.8
0
25
50
75
100
125
150
175
On-Resistance vs. Junction Temperature
100
0.25
10
0.20
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
VGS = 4.5 V
TJ - Junction Temperature (°C)
Gate Charge
TJ = 150 °C
1
TJ = 25 °C
0.1
VGS = 2.5 V
1.4
0.5
- 50 - 25
0
0
ID = 5 A
1.7
0.15
0.10
0.01
0.05
0.001
0.0
0.00
TJ = 150 °C
TJ = 25 °C
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
0
Source Drain Diode Forward Voltage
35
VDS - Drain-to-Source Voltage (V)
0.1
VGS(th) Variance (V)
5
On-Resistance vs. Gate-to-Source Voltage
0.3
ID = 5 mA
- 0.1
ID = 250 μA
- 0.3
- 0.5
- 50 - 25
1
2
3
4
VGS - Gate-to-Source Voltage (V)
0
25
50
75
100
TJ - Temperature (°C)
Threshold Voltage
S21-1074-Rev. C, 15-Nov-2021
125
150
175
33
ID = 1 mA
31
29
27
25
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
Document Number: 67036
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2310ES
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
IDM Limited
ID - Drain Current (A)
10
100 μs
1
1 ms
Limited by RDS(on)*
10 ms
0.1
0.01
0.01
TC = 25 °C
Single Pulse
100 ms
1 s, 10 s, DC
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S21-1074-Rev. C, 15-Nov-2021
Document Number: 67036
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2310ES
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Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJF = 175 °C/W
0.02
3. TJM - TF = PDMZthJF (t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67036.
S21-1074-Rev. C, 15-Nov-2021
Document Number: 67036
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOT-23 (TO-236): 3-LEAD
b
3
E1
1
E
2
e
S
e1
D
0.10 mm
C
0.004"
A2
A
C
q
Gauge Plane
Seating Plane
Seating Plane
C
A1
Dim
0.25 mm
L
L1
MILLIMETERS
Min
INCHES
Max
Min
Max
0.044
A
0.89
1.12
0.035
A1
0.01
0.10
0.0004
0.004
A2
0.88
1.02
0.0346
0.040
b
0.35
0.50
0.014
0.020
c
0.085
0.18
0.003
0.007
D
2.80
3.04
0.110
0.120
E
2.10
2.64
0.083
0.104
E1
1.20
1.40
0.047
e
0.95 BSC
e1
L
1.90 BSC
0.40
L1
q
0.0748 Ref
0.60
0.016
0.64 Ref
S
0.024
0.025 Ref
0.50 Ref
3°
0.055
0.0374 Ref
0.020 Ref
8°
3°
8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
Document Number: 71196
09-Jul-01
www.vishay.com
1
Application Note 826
Vishay Siliconix
0.049
(1.245)
0.029
0.022
(0.559)
(0.724)
0.037
(0.950)
(2.692)
0.106
RECOMMENDED MINIMUM PADS FOR SOT-23
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index Return to Index
APPLICATION NOTE
Document Number: 72609
Revision: 21-Jan-08
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25
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Revision: 01-Jan-2022
1
Document Number: 91000