SQA405CEJW
www.vishay.com
Vishay Siliconix
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® SC-70W-6L Single
S
4
D
5
• TrenchFET® power MOSFET
D
6
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Wettable flank terminals
2.
05
m
m
1
m
5m
2.0
Top View
S
7
2
D
3
G
1
D
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S
Bottom View
Marking Code: QRXXXX
PRODUCT SUMMARY
G
VDS (V)
-40
RDS(on) (Ω) at VGS = -10 V
0.0395
RDS(on) (Ω) at VGS = -4.5 V
0.0545
ID (A)
Configuration
-9
P-Channel MOSFET
Single
D
ORDERING INFORMATION
Package
PowerPAK SC-70W-6L
Lead (Pb)-free and halogen-free
SQA405CEJW
(for detailed order number please see www.vishay.com/doc?79776)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
SYMBOL
VDS
LIMIT
-40
Gate-source voltage f
VGS
± 20
Continuous drain current
TC = 25 °C a
TC = 125 °C
Continuous source current (diode conduction) a
Pulsed drain current b
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation
L = 0.1 mH
TC = 25 °C
TC = 125 °C
ID
-9
IS
-9
-36
IAS
-13.5
EAS
9.11
Soldering recommendations (peak temperature) d, e
13.6
4.5
260
Operating junction and storage temperature range
V
-7.9
IDM
PD
UNIT
TJ, Tstg
-55 to +175
SYMBOL
LIMIT
RthJA
90
RthJC
11
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount c
UNIT
°C/W
Notes
a. Package limited
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
c. When mounted on 1" square PCB (FR4 material)
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70W-6L is a leadless package and features wettable flank terminals.
The end of the lead terminal is plated with tin
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Not intended for continuous use with positive gate voltage > 3 V. Operation in the range 3 V < VGS ≤ 12 V is limited to 25 % duty
S21-0728-Rev. B, 12-Jul-2021
Document Number: 63080
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQA405CEJW
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
VDS
VGS = 0, ID = -250 μA
-40
-
-
VGS(th)
VDS = VGS, ID = -250 μA
-1.5
-2.0
-2.5
VDS = 0 V, VGS = ± 20 V
IGSS
-
-
± 100
VGS = 0 V
VDS = -40 V
-
-
-1
-
-
-50
-150
Zero gate voltage drain current
IDSS
VGS = 0 V
VDS = -40 V, TJ = 125 °C
VGS = 0 V
VDS = -40 V, TJ = 175 °C
-
-
On-state drain current a
ID(on)
VGS = -10 V
VDS ≥ -5 V
-8
-
-
VGS = -10 V
ID = -5 A
-
0.0326
0.0395
VGS = -10 V
ID = -5 A, TJ = 125 °C
-
-
0.0616
VGS = -10 V
ID = -5 A, TJ = 175 °C
-
-
0.0727
VGS = -4.5 V
ID = -4 A
-
0.0453
0.0545
-
18
-
Drain-source on-state resistance a
Forward transconductance b
Dynamic
RDS(on)
gfs
VDS = -10 V, ID = -7 A
V
nA
μA
A
Ω
S
b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Total gate charge c
Gate-source
charge c
Gate-drain charge c
Gate resistance
Turn-on delay time c
Rise time c
Turn-off delay time c
Fall time c
-
1142
1700
-
83
125
Crss
-
70
105
Qg
-
22.6
34
-
4.4
-
-
4.1
-
3.3
6.6
9.9
-
9
15
Qgs
VGS = 0 V
VDS = -25 V, f = 1 MHz
VGS = -10 V
VDS = -20 V, ID = -8 A
Qgd
Rg
f = 1 MHz
td(on)
tr
td(off)
VDD = -20 V, RL = 8 Ω
ID ≅ -2.5 A, VGEN = -10 V, Rg = 1 Ω
tf
-
4
8
-
32
50
-
6
10
pF
nC
Ω
ns
Source-Drain Diode Ratings and Characteristics
Pulsed current a
ISM
Forward voltage
VSD
IF = -5 A, VGS = 0
-
-
-36
-
-0.85
-1.2
V
-
14
30
ns
-
9
20
nC
-
9
-
ns
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
-
5
-
IRM(REC)
-
-1.5
-
Body diode peak reverse recovery current
IF = -2 A, di/dt = 100 A/μs
A
A
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S21-0728-Rev. B, 12-Jul-2021
Document Number: 63080
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQA405CEJW
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
VGS = 10 V thru 6 V
VGS = 5 V
1000
1st line
2nd line
36
VGS = 4 V
24
10000
28
100
2nd line
ID - Drain Current (A)
48
2nd line
ID - Drain Current (A)
35
10000
12
1000
21
1st line
2nd line
60
TC = 25 °C
14
100
7
VGS = 3 V
TC = 125 °C
0
0
2
4
6
8
TC = -55 °C
0
10
10
0
10
1
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
5
Axis Title
Axis Title
30
0.15
10000
10000
18
TC = 125 °C
12
100
6
0.12
1000
0.09
1st line
2nd line
1000
2nd line
RDS(on) - On-Resistance (Ω)
TC = 25 °C
24
1st line
2nd line
2nd line
gfs - Transconductance (S)
TC = -55 °C
VGS = 4.5 V
0.06
100
0.03
VGS = 10 V
10
0
0
0
3
6
9
12
15
10
0
6
12
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
Axis Title
Axis Title
Coss
100
100
Crss
10
10
24
32
40
10000
ID = 8 A,
VDS = 20 V
8
1000
6
1st line
2nd line
1000
2nd line
VGS - Gate-to-Source Voltage (V)
1000
1st line
2nd line
2nd line
C - Capacitance (pF)
Ciss
16
4
100
2
0
10
0
5
10
15
20
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
S21-0728-Rev. B, 12-Jul-2021
30
10
10000
8
24
ID - Drain Current (A)
10 000
0
18
25
Document Number: 63080
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQA405CEJW
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
1.0
ID = 2.5 A
ID = -250 μA
0.7
VGS = 10 V
1000
1.4
VGS = 4.5 V
1.1
100
2nd line
VGS(th) - Variance (V)
1.7
10000
0.8
1000
0.4
ID = -5 mA
0.1
100
-0.2
0.5
-0.5
10
-50 -25
0
25
50
10
-50 -25
75 100 125 150 175
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Threshold Voltage
Axis Title
Axis Title
-40
0.16
1000
1st line
2nd line
0.12
0.08
100
TJ = 125 °C
0.04
TJ = 25 °C
0
2nd line
VDS - Drain-to-Source Voltage (V)
10000
2
4
6
8
ID = -1 mA
-44
1000
-48
-52
100
-56
-60
10
0
10000
1st line
2nd line
0.20
2nd line
RDS(on) - On-Resistance (Ω)
1st line
2nd line
10000
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
2.0
10
10
-50 -25
0
25
50
75 100 125 150 175
VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
Axis Title
Axis Title
100
10000
100
10000
TJ = 150 °C
1
100
TJ = 25 °C
0.1
10
1000
100 μs
ID limited
1
1 ms
10 ms
100 ms,
1 s,
100
10 s, DC
Limited by RDS(on) a
0.1
1st line
2nd line
1000
2nd line
ID - Drain Current (A)
10
1st line
2nd line
2nd line
IS - Source Current (A)
IDM limited
BVDSS limited
TC = 25 °C,
single pulse
0.01
10
0
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0.01
10
0.1
1
10
VSD - Source-to-Drain Voltage (V)
VDS - Drain-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
Safe Operating Area
100
Note
a. VGS > minimum VGS at which RDS(on) is specified
S21-0728-Rev. B, 12-Jul-2021
Document Number: 63080
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQA405CEJW
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
0.02
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 90 °C/W
3. TJM - T A = PDMZthJA(t)
Single pulse
0.01
10-4
4. Surface Mounted
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63080.
S21-0728-Rev. B, 12-Jul-2021
Document Number: 63080
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SC70W-6L SIDEWETTABLE
e1
2x
A
D
K6
4x
1
A
B
Pin 1 index
e
4x
L1
2
3
L
K
E
K5
E2
E1
K2
D1
K1
K3
D2
K4
K
2x
L
6
Top view
b1
6x
5
b
6x
4
0.1 M C A B
0.05 M C
Bottom view
2x
0.10 C
0.10 C
C
0.05 C
A1
A2
See detail Z
DIM.
MIN.
0.70
0.00
0.10
0.25
0.15
0.20
1.95
0.88
0.20
1.95
1.06
0.82
A
A1
A2
b
b1
C
D
D1
D2
E
E1
E2
e
e1
K
K1
K2
K3
K4
K5
K6
L
0.15
L1
ECN: C19-1644-Rev. A, 10-Jan-2020
DWG: 6076
0.05 C
Detail Z (2:1)
C
MILLIMETERS
NOM.
0.80
0.02
0.30
0.20
0.25
2.05
0.98
0.25
2.05
1.16
0.87
0.65 BSC
1.30 BSC
0.20 typ.
0.47 typ.
0.23 typ.
0.18 typ.
0.35 typ.
0.35 typ.
0.38 typ.
0.25
0.10
MAX.
0.90
0.05
0.35
0.23
0.30
2.15
1.08
0.30
2.15
1.26
0.92
MIN.
0.027
0.000
0.004
0.010
0.006
0.008
0.077
0.035
0.008
0.077
0.042
0.032
0.35
-
0.006
-
INCHES
NOM.
0.031
0.001
0.012
0.008
0.010
0.081
0.039
0.010
0.081
0.046
0.034
0.026 BSC
0.051 BSC
0.008 typ.
0.019 typ.
0.009 typ.
0.007 typ.
0.014 typ.
0.014 typ.
0.015 typ.
0.010
0.004
MAX.
0.035
0.002
0.014
0.009
0.012
0.085
0.043
0.012
0.085
0.050
0.036
0.014
-
Notes
• Package outline exclusive of mold flash and metal burr
• Package outline inclusive of plating
Document Number: 77413
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 10-Jan-2020
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Revision: 01-Jan-2023
1
Document Number: 91000