SQJQ148ER-T1_GE3

SQJQ148ER www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET FEATURES PowerPAK® 8 x 8LR D 5 10 .2 mm G 4 S S 8 D 6 D 7 • TrenchFET® Gen IV power MOSFET D 8 • AEC-Q101 qualified • 100 % Rg and UIS tested D S Top View S 2 S 1 mm S 3 G 4 • Thin 1.6 mm package • Very low thermal resistance • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D Bottom View PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V 40 ID (A) Configuration G 0.0015 372 Single S N-Channel MOSFET ORDERING INFORMATION Package PowerPAK 8 x 8LR Lead (Pb)-free and halogen-free SQJQ148ER (for detailed order number please see www.vishay.com/doc?79776) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 40 Gate-source voltage VGS ± 20 Continuous drain current TC = 25 °C TC = 125 °C Continuous source current (diode conduction) Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID 214 360 IDM 670 IAS 46 EAS 105 TJ, Tstg Soldering recommendations (peak temperature) d V 372 IS PD UNIT 394 131 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount c SYMBOL LIMIT RthJA 44 RthJC 0.38 UNIT °C/W Notes a. Package limited b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % c. When mounted on 1" square PCB (FR4 material) d. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection S21-0402-Rev. A, 26-Apr-2021 Document Number: 66839 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ148ER www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0, ID = 250 μA 40 - - VGS(th) VDS = VGS, ID = 250 μA 2 3 3.5 VDS = 0 V, VGS = ± 20 V UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance b IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 40 V - - 1 VGS = 0 V VDS = 40 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 40 V, TJ = 175 °C - - 200 VGS = 10 V VDS ≥ 5 V 100 - - VGS = 10 V ID = 20 A - 0.00125 0.0015 VGS = 10 V ID = 20 A, TJ = 125 °C - - 0.0025 VGS = 10 V ID = 20 A, TJ = 175 °C - - 0.0031 - 120 - VDS = 15 V, ID = 60 A V nA μA A Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Total gate charge c Gate-source charge c Gate-drain charge c Gate resistance Turn-on delay time c Rise time c Turn-off delay time c Fall time c - 4170 5750 - 1566 2193 Crss - 131 184 Qg - 68 102 - 20 - - 15 - 0.8 1.6 2.4 - 17 26 Qgs VGS = 0 V VDS = 25 V, f = 1 MHz VGS = 10 V VDS = 20 V, ID = 20 A Qgd Rg f = 1 MHz td(on) tr td(off) VDD = 20 V, RL = 1 Ω ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω tf - 88 132 - 30 45 - 12 18 pF nC Ω ns Source-Drain Diode Ratings and Characteristics b Reverse recovery time trr Reverse recovery charge Qrr Reverse recovery current Pulsed current a Forward voltage VSD - 47 94 ns - 47 94 nC IRM - - 1.8 A ISM - - 1600 A - 0.8 1.1 V VDD = 32 V, IFM = 15 A, di/dt = 100 A/μs IF = 50 A, VGS = 0 Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-0402-Rev. A, 26-Apr-2021 Document Number: 66839 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ148ER www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 500 10000 10000 10000 VGS = 10 V thru 7 V Ciss 200 100 VGS = 5 V Coss 1000 1000 1st line 2nd line VGS = 6 V 2nd line C - Capacitance (pF) 1000 300 1st line 2nd line 2nd line ID - Drain Current (A) 400 Crss 100 100 100 VGS = 4 V 0 10 10 0 2 4 6 8 10 0 10 8 16 32 VDS - Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Capacitance Axis Title 40 Axis Title 0.005 200 1000 1st line 2nd line 150 TC = 25 °C 100 100 TC = 125 °C 50 2nd line RDS(on) - On-Resistance (Ω) 10000 10000 0.004 1000 0.003 1st line 2nd line 250 2nd line ID - Drain Current (A) 24 0.002 100 VGS = 10 V 0.001 TC = -55 °C 0 0 10 0 2 4 6 8 10 10 0 20 40 60 80 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics On-Resistance vs. Drain Current Axis Title 100 Axis Title 10 10000 250 10000 1000 150 TC = 125 °C 100 100 50 0 10 0 20 40 60 80 100 ID = 20 A, VDS = 20 V 8 1000 6 1st line 2nd line TC = 25 °C 2nd line VGS - Gate-to-Source Voltage (V) 200 1st line 2nd line 2nd line gfs - Transconductance (S) TC = -55 °C 4 100 2 0 10 0 15 30 45 60 ID - Drain Current (A) Qg - Total Gate Charge (nC) Transconductance Gate Charge S21-0402-Rev. A, 26-Apr-2021 75 Document Number: 66839 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ148ER www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 0.010 10000 10000 1000 1.4 1.1 100 0.8 0.008 1000 0.006 1st line 2nd line VGS = 10 V 2nd line RDS(on) - On-Resistance (Ω) ID = 10 A 1.7 1st line 2nd line 0.004 0.002 TJ = 25 °C 0.5 0 10 -50 -25 0 25 50 10 75 100 125 150 175 0 2 4 6 8 10 TJ - Junction Temperature (°C) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 58 10000 0.5 ID = 1 mA 10000 0.1 1000 54 52 100 2nd line VGS(th) - Variance (V) 56 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 100 TJ = 150 °C 50 1000 ID = 5 mA -0.3 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.0 -0.7 100 ID = 250 μA -1.1 48 10 -50 -25 0 25 50 -1.5 75 100 125 150 175 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Threshold Voltage Axis Title Axis Title 100 10000 1000 10000 IDM limited 1 ms 1 100 0.1 TJ = 25 °C 10 0 0.2 0.4 0.6 0.8 10 Limited by RDS(on) a 1 100 0.1 0.01 1.0 1.2 10 ms 1000 100 ms 1 s, 10 s, DC 1st line 2nd line 1000 TJ = 150 °C 2nd line ID - Drain Current (A) 10 1st line 2nd line 2nd line IS - Source Current (A) 100 0.01 0.01 BVDSS limited TC = 25 °C, single pulse 10 0.1 1 10 VSD - Source-to-Drain Voltage (V) VDS - Drain-to-Source Voltage (V) Source Drain Diode Forward Voltage Safe Operating Area 100 Note a. VGS > minimum VGS at which RDS(on) is specified S21-0402-Rev. A, 26-Apr-2021 Document Number: 66839 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ148ER www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 10000 Duty cycle = 0.5 0.2 1000 0.1 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.05 0.02 100 0.01 Single pulse 0.001 0.0001 10 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Axis Title Duty cycle = 0.5 0.2 0.1 0.1 1000 0.05 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 1 0.02 0.01 100 0.001 0.0001 0.0001 Single pulse 10 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66839. S21-0402-Rev. A, 26-Apr-2021 Document Number: 66839 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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