SUD40N08-16-E3

SUD40N08-16 Vishay Siliconix N-Channel 80-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 80 0.016 @ VGS = 10 V 40 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested D TO-252 Drain Connected to Tab G D G S Top View Ordering Information: S SUD40N08-16 SUD40N08-16—E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 80 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 175_C)b TC = 25_C TC = 125_C Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%) L = 0.1 mH TC = 25_C Maximum Power Dissipation TA = 25_C Operating Junction and Storage Temperature Range Unit V 40 ID 30 IDM 60 IS 40 IAR 40 EAR 80 A mJ 136b PD W 3a TJ, Tstg −55 to 175 _C THERMAL RESISTANCE RATINGS Parameter J Junction-to-Ambient ti t A bi ta Junction-to-Case Symbol t v 10 sec Steady State RthJA RthJC Typical Maximum 15 18 40 50 0.85 1.1 Unit _C/W C/W Notes a. Surface Mounted on 1” x1” FR4 Board. b. See SOA curve for voltage derating. Document Number: 71323 S-40272—Rev. C, 23-Feb-04 www.vishay.com 1 SUD40N08-16 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 80 VGS(th) VDS = VGS, ID = 250 mA 2.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 80 V, VGS = 0 V 1 VDS = 80 V, VGS = 0 V, TJ = 125_C 50 VDS = 80 V, VGS = 0 V, TJ = 175_C 250 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currentb IDSS ID(on) VDS = 5 V, VGS = 10 V 60 rDS(on) VGS = 10 V, ID = 40 A, TJ = 125_C 0.027 VGS = 10 V, ID = 40 A, TJ = 175_C 0.037 VGS = 10 V, ID = 40 A Drain-Source On-State Resistanceb Forward Transconductanceb 4.0 gfs nA mA m A 0.013 VDS = 15 V, ID = 40 A V 0.016 45 W S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec 1960 VGS = 0 V, VDS = 25 V, F = 1 MHz 370 200 42 nC 13 Rg 0.5 td(on) tr 60 7 VDS = 40 V,, VGS = 10 V,, ID = 40 A Qgd td(off) pF VDD = 40 V, RL = 1.0 W ID ^ 40 A, VGEN = 10 V, Rg = 2.5 W tf 2.7 12 20 52 80 25 38 10 15 W ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM Diode Forward Voltageb VSD IF = 40 A, VGS = 0 V 1.0 1.5 V trr IF = 40 A, di/dt = 100 A/ms 45 70 ns Source-Drain Reverse Recovery Time 60 A Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71323 S-40272—Rev. C, 23-Feb-04 SUD40N08-16 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 100 100 VGS = 10 thru 7 V 80 60 I D − Drain Current (A) I D − Drain Current (A) 80 6V 40 20 5V 3, 4 V 60 40 TC = 125_C 20 25_C −55_C 0 0 0 2 4 6 8 10 0 VDS − Drain-to-Source Voltage (V) 1 2 3 4 5 6 7 VGS − Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 80 0.04 25_C 60 r DS(on)− On-Resistance ( W ) g fs − Transconductance (S) TC = −55_C 125_C 40 20 0 0.03 0.02 VGS = 10 V 0.01 0.00 0 20 40 60 80 100 0 20 40 ID − Drain Current (A) V GS − Gate-to-Source Voltage (V) C − Capacitance (pF) Ciss 1500 1000 Crss 500 100 60 75 Gate Charge 20 2500 2000 80 ID − Drain Current (A) Capacitance 3000 60 Coss 0 VDS = 10 V ID = 40 A 16 12 8 4 0 0 20 40 60 VDS − Drain-to-Source Voltage (V) Document Number: 71323 S-40272—Rev. C, 23-Feb-04 80 0 15 30 45 Qg − Total Gate Charge (nC) www.vishay.com 3 SUD40N08-16 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.4 100 VGS = 10 V ID = 40 A 10 I S − Source Current (A) rDS(on) − On-Resiistance (Normalized) 2.0 1.6 1.2 0.8 TJ = 150_C 1 TJ = 25_C 0.1 0.4 0.0 −50 −25 0 25 50 75 100 125 150 0.01 175 0 TJ − Junction Temperature (_C) 0.3 0.6 0.9 1.2 VSD − Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 50 40 100 I D − Drain Current (A) I D − Drain Current (A) Safe Operating Area 1000 30 20 10 0 0 25 50 75 100 125 150 100 ms 10 1 ms 10 ms 1 0.1 175 100 ms 1 s, dc TC = 25_C Single Pulse 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) TC − Case Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance 10 ms Limited by rDS(on) Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 71323 S-40272—Rev. C, 23-Feb-04 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1