SUD40N10-25-T4-E3

SUD40N10-25 Vishay Siliconix N-Channel 100-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 40 0.028 at VGS = 4.5 V 38 • TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested Available RoHS* COMPLIANT TO-252 D G Drain Connected to Tab G D S Top View S Ordering Information: SUD40N10-25 SUD40N10-25-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C 23 70 Continuous Source Current (Diode Conduction) IS 40 Avalanche Current IAS 40 EAS 80 Single Pulse Avalanche Energy (Duty Cycle ≤ 1 %) Maximum Power Dissipation L = 0.1 mH TC = 25 °C TA = 25 °C A mJ 136b PD W 3a TJ, Tstg Operating Junction and Storage Temperature Range V 40 ID IDM Pulsed Drain Current Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta Symbol t ≤ 10 s Steady State Junction-to-Case RthJA RthJC Typical Maximum 15 18 40 50 0.85 1.1 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See SOA curve for voltage derating. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71140 S-81732-Rev. E, 04-Aug-08 www.vishay.com 1 SUD40N10-25 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage VDS VGS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 250 µA 1.0 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 100 V, VGS = 0 V 1 VDS = 100 V, VGS = 0 V, TJ = 125 °C 50 Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) 3.0 VDS = 100 V, VGS = 0 V, TJ = 175 °C VDS = 5 V, VGS = 10 V Forward Transconductanceb RDS(on) µA A 0.02 0.025 VGS = 10 V, ID = 40 A, TJ = 125 °C 0.05 VGS = 10 V, ID = 40 A, TJ = 175 °C 0.063 VGS = 4.5 V, ID = 20 A 0.022 VDS = 15 V, ID = 40 A 70 gfs nA 250 70 VGS = 10 V, ID = 40 A Drain-Source On-State Resistanceb V Ω 0.028 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c Gate-Drain Charge 120 40 VDS = 50 V, VGS = 10 V, ID = 40 A 1 td(on) Rise Timec tr c td(off) Fall Timec 60 nC 11 9 Rg Turn-On Delay Timec pF 290 Qgd Gate Resistance Turn-Off Delay Time 2400 VGS = 0 V, VDS = 25 V, F = 1 MHz 3.5 8 VDD = 50 V, RL = 1.25 Ω ID ≅ 40 A, VGEN = 10 V, Rg = 2.5 Ω tf Ω 13 40 60 15 25 80 120 ns Source-Drain Diode Ratings and Characteristics TC = 25 °C ISM Pulsed Current Diode Forward Voltage b Source-Drain Reverse Recovery Time 70 A VSD IF = 40 A, VGS = 0 V 1.0 1.5 V trr IF = 40 A, dI/dt = 100 A/µs 75 120 ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71140 S-81732-Rev. E, 04-Aug-08 SUD40N10-25 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 160 VGS = 10 thru 6 V 5V 80 I D - Drain Current (A) I D - Drain Current (A) 120 80 4V 60 TC = 125 °C 40 - 55 °C 25 °C 40 20 3V 0 0 0 2 4 6 8 0 10 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 100 0.05 TC = - 55 °C 25 °C 60 R DS(on) - On-Resistance (Ω) gfs - Transconductance (S) 80 125 °C 40 20 0 0.04 0.03 VGS = 4.5 V 0.02 VGS = 10 V 0.01 0.00 0 10 20 30 40 50 60 0 20 40 ID - Drain Current (A) 80 100 I D - Drain Current (A) Transconductance On-Resistance vs. Drain Current 20 VGS - Gate-to-Source Voltage (V) 4000 3000 C - Capacitance (pF) 60 Ciss 2000 1000 Crss Coss VDS = 50 V ID = 40 A 16 12 8 4 0 0 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 71140 S-81732-Rev. E, 04-Aug-08 100 0 20 40 60 80 Q g - Total Gate Charge (nC) Gate Charge www.vishay.com 3 SUD40N10-25 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 3.0 VGS = 10 V ID = 40 A IS - Source Current (A) 2.0 (Normalized) R DS(on) - On-Resistance 2.5 1.5 1.0 TJ = 175 °C 10 TJ = 25 °C 0.5 0.0 - 50 - 25 0 25 50 75 100 125 150 1 175 0.3 0 0.6 0.9 1.2 TJ - Junction Temperature ( °C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage THERMAL RATINGS 100 50 10 µs Limited by R DS(on)* 100 µs I D - Drain Current (A) ID - Drain Current (A) 40 30 20 10 1 ms 10 ms 100 ms 1 s, DC 1 TC = 25 °C Single Pulse 10 0 0 25 50 75 100 125 150 175 0.1 0.1 TC - Case Temperature (°C) Maximum Avalanche Drain Current vs. Case Temperature 1 10 1000 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 30 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71140. www.vishay.com 4 Document Number: 71140 S-81732-Rev. E, 04-Aug-08 Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline VERSION 1: FACILITY CODE = Y E A C2 H D D1 L3 b3 e b2 e1 L gage plane height (0.5 mm) L4 b L5 E1 C A1 MILLIMETERS DIM. MIN. A 2.18 MAX. 2.38 A1 - 0.127 b 0.64 0.88 b2 0.76 1.14 b3 4.95 5.46 C 0.46 0.61 C2 0.46 0.89 D 5.97 6.22 D1 4.10 - E 6.35 6.73 E1 4.32 - H 9.40 10.41 e 2.28 BSC e1 4.56 BSC L 1.40 1.78 L3 0.89 1.27 L4 - 1.02 L5 1.01 1.52 Note • Dimension L3 is for reference only Revision: 03-Oct-2022 Document Number: 71197 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix VERSION 2: FACILITY CODE = N E e A b3 E1 E1/2 c2 θ e L4 L5 L6 H D L3 D1 θ 0.25 (3°) DETAIL "B" C A B (3°) DETAIL "B" A1 C L (L1) b1 SEATING C PLANE θ L2 GAUGE PLANE H C (b) c1 3x b 2x e c 2x b2 MILLIMETERS MILLIMETERS DIM. A MIN. 2.18 MAX. DIM. MIN. 2.39 L 1.50 A1 - 0.13 L1 b 0.65 0.89 L2 MAX. 1.78 2.74 ref. 0.51 BSC b1 0.64 0.79 L3 b2 0.76 1.13 L4 - 1.02 b3 4.95 5.46 L5 1.14 1.49 c 0.46 0.61 L6 0.65 0.85 c1 0.41 0.56  0° 10° 1 0° 15° 2 25° 35° c2 0.46 0.60 D 5.97 6.22 D1 5.21 - E 6.35 6.73 E1 4.32 e H 2.29 BSC 9.94 0.89 1.27 Notes • Dimensioning and tolerance confirm to ASME Y14.5M-1994 • All dimensions are in millimeters. Angles are in degrees • Heat sink side flash is max. 0.8 mm • Radius on terminal is optional 10.34      ECN: E22-0399-Rev. R, 03-Oct-2022 DWG: 5347 Revision: 03-Oct-2022 Document Number: 71197 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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