SUD50N10-34P-T4-E3

New Product SUD50N10-34P Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.034 at VGS = 10 V 20 0.040 at VGS = 6.0 V 20 VDS (V) 100 Qg (Typ) • TrenchFET® Power MOSFET • 100 % UIS Tested RoHS 24 nC COMPLIANT APPLICATIONS • LCD TV Inverter • LCD Backlight TO-252 D G Drain Connected to Tab G D S Top View S Ordering Information: SUD50N10-34P-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit 100 ± 20 ID Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD A 20a 2.0b 25 31 56 36 mJ W 2.5b 1.6b - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range V 20a 20a 5.9b 4.7b 50 IDM Pulsed Drain Current Unit °C THERMAL RESISTANCE RATINGS Parameter Maximum Steady State Symbol RthJA Typical Maximum Junction-to-Ambientb 38 50 Maximum Junction-to-Case Steady State RthJC 1.6 2.2 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. Document Number: 74802 S-72068-Rev. A, 08-Oct-07 www.vishay.com 1 New Product SUD50N10-34P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min VDS VGS = 0 V, ID = 1 mA 100 Typ Max Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea mV/°C - 8.7 2 4 V ± 100 nA VDS = 100 V, VGS = 0 V 1 VDS = 100 V, VGS = 0 V, TJ = 70 °C 20 VDS ≥ 5 V, VGS = 10 V rDS(on) Forward Transconductancea V 115 gfs 30 µA A VGS = 10 V, ID = 7 A 0.028 0.034 VGS = 6 V, ID = 6 A 0.031 0.040 VDS = 15 V, ID = 7 A 25 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 1800 VDS = 25 V, VGS = 0 V, f = 1 MHz 200 pF 70 24 VDS = 50 V, VGS = 10 V, ID = 7 A 30 7.6 nC 5.4 f = 1 MHz Rg VDD = 50 V, RL = 10 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 6 Ω tr td(off) Ω 1.2 13 td(on) 25 12 24 30 55 tf 10 20 td(on) 10 20 VDD = 50 V, RL = 10 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω tr td(off) tf 11 20 20 40 9 18 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 20 50 IS = 5 A IF = 5 A, di/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 50 80 ns 100 150 nC 38 12 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74802 S-72068-Rev. A, 08-Oct-07 New Product SUD50N10-34P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 60 VGS = 10 thru 6 V 50 ID - Drain Current (A) ID - Drain Current (A) 50 40 30 5V 20 10 40 30 TC = 25 °C 20 TC = 150 °C 10 TC = - 55 °C 4V 0 0 0 1 2 3 4 5 0 1 2 VDS - Drain-to-Source Voltage (V) Output Characteristics 4 5 6 7 8 Transfer Characteristics 0.040 2500 0.036 2000 C - Capacitance (pF) r DS(on) - On-Resistance (Ω) 3 VGS - Gate-to-Source Voltage (V) VGS = 6 V 0.032 0.028 VGS = 10 V 0.024 Ciss 1500 1000 500 Coss 0.020 0 0 5 10 15 20 25 30 Crss 0 10 I - Drain Current (A) 20 40 50 60 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 2.4 10 ID = 7 A VDS = 50 V ID = 7 A rDS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 30 8 6 4 2.0 VGS = 10 V 1.6 VGS = 6 V 1.2 0.8 2 0 0 5 10 15 Qg - Total Gate Charge (nC) Gate Charge Document Number: 74802 S-72068-Rev. A, 08-Oct-07 20 25 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product SUD50N10-34P Vishay Siliconix 100 0.060 10 0.052 r DS(on) - On-Resistance (Ω) I S - Source Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted TJ = 150 °C 1 0.1 TJ = 25 °C 0.01 0.001 0.0 0.2 0.4 0.6 0.8 1.0 0.044 0.036 0.028 0.020 4.0 1.2 5.2 6.4 7.6 8.8 10.0 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 80 1.0 64 0.5 ID = 250 µA Power (W) V GS(th) Variance (V) ID = 7 A 0.0 - 0.5 - 1.0 - 1.5 - 50 48 32 16 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 250 r DS(on) Limited* 10 I D - Drain Current (A) Power (W) 200 150 100 1 ms 1 10 ms 100 ms 1s TA = 25 °C Single Pulse 0.1 50 10 s DC 0 0.001 0.01 0.01 0.1 1 10 0.01 0.1 Time (s) Single Pulse Power, Junction-to-Case * VGS 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 74802 S-72068-Rev. A, 08-Oct-07 New Product SUD50N10-34P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 7 rDS(on) Limited* 10 ms 100 ms 1s TC = 25 °C Single Pulse I D - Drain Current (A) I D - Drain Current (A) 1 ms 1 0.1 6 100 µs 10 4 3 1 0 0.01 0.01 0.1 * VGS 1 10 0 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified 50 75 100 125 150 TA - Ambient Temperature (°C) Current Derating**, Junction-to-Ambient Safe Operating Area, Junction-to-Case 32 70 26 56 Package Limited 19 Power I D - Drain Current (A) 25 42 13 28 6 14 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Power Derating**, Junction-to-Case Current Derating**, Junction-to-Case 3.0 Power 2.4 1.8 1.2 0.6 ** The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating**, Junction-to-Ambient Document Number: 74802 S-72068-Rev. A, 08-Oct-07 150 upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 5 New Product SUD50N10-34P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 t2 1. Duty Cycle, D = 0.05 2. Per Unit Base = RthJA = 50 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 t1 t2 10-3 4. Surface Mounted 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74802. www.vishay.com 6 Document Number: 74802 S-72068-Rev. A, 08-Oct-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1