SUD50N03-11-E3

SUD50N03-11 Vishay Siliconix N-Channel 30-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.011 at VGS = 10 V 50 0.017 at VGS = 4.5 V 43 VDS (V) 30 • TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested RoHS COMPLIANT D TO-252 G Drain Connected to Tab G D S S Top View Ordering Information: SUD50N03-11-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 100 °C Continuous Source Current (Diode Conduction)a Maximum Power Dissipation 37 TA = 25 °C 50 62.5c PD W 7.5b TJ, Tstg Operating Junction and Storage Temperature Range A 100 IS TC = 25 °C V 50 ID IDM Pulsed Drain Current Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb Symbol t ≤ 10 s Steady State RthJA Typical Maximum 17 20 50 60 Junction-to-Case RthJC 2 2.4 Junction-to-Lead RthJL 4 4.8 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board, t ≤ 10 s. c. See SOA curve for voltage derating. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71187 S-81225-Rev. D, 02-Jun-08 www.vishay.com 1 SUD50N03-11 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS = 0 V, ID = 250 µA 30 VGS(th) VDS = VGS, ID = 250 µA 0.8 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 125 °C 50 Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) VDS = 5 V, VGS = 5 V 50 VGS = 10 V, ID = 25 A Drain-Source On-State Resistanceb VGS = 5 V, ID = 20 A, TJ = 125 °C RDS(on) gfs VDS = 15 V, ID = 20 A nA µA A 0.009 0.011 0.018 VGS = 4.5 V, ID = 15 A Forward Transconductanceb V 0.014 Ω 0.017 10 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg c Gate-Source Charge c Gate-Drain Charge Qgd Rg c td(on) Turn-Off Delay Timec td(off) Turn-On Delay Time Fall Timec tr pF 400 175 12 Qgs Gate Resistance Rise Timec 1130 VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 15 V, VGS = 5 V, ID = 50 A 20 nC 4 4.5 0.5 3.4 8 VDD = 15 V, RL = 0.3 Ω ID ≅ 50 A, VGEN = 10 V, RG = 2.5 Ω tf Ω 12 10 15 18 30 6 9 ns Source-Drain Diode Ratings and Characteristics TC = 25 °C IS 50 Pulsed Current ISM 80 Diode Forward Voltageb VSD IF = 100 A, VGS = 0 V trr IF = 50 A, dI/dt = 100 A/µs Continuous Current Source-Drain Reverse Recovery Time 30 A 1.5 V 50 ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71187 S-81225-Rev. D, 02-Jun-08 SUD50N03-11 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 200 VGS = 10 thru 8 V TC = - 55 °C 7V 80 160 120 I D - Drain Current (A) I D - Drain Current (A) 6V 5V 80 4V 25 °C 60 125 °C 40 20 40 3V 2V 0 0 2 4 6 8 0 0 10 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.04 60 25 °C 40 125 °C R DS(on) - On-Resistance (Ω) g fs - Transconductance (S) TC = - 55 °C 50 30 20 0.03 0.02 VGS = 4.5 V VGS = 10 V 0.01 10 0.00 0 0 20 40 60 80 0 100 20 40 80 100 I D - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 2000 VGS - Gate-to-Source Voltage (V) 10 1600 C - Capacitance (pF) 60 Ciss 1200 800 Coss Crss 400 0 VDS = 15 V ID = 50 A 8 6 4 2 0 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 71187 S-81225-Rev. D, 02-Jun-08 25 30 0 4 8 12 16 20 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 SUD50N03-11 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 2.0 VGS = 10 V ID = 25 A I S - Source Current (A) (Normalized) R DS(on) - On-Resistance 1.6 1.2 0.8 TJ = 150 °C TJ = 25 °C 10 0.4 0.0 - 50 - 25 0 25 50 75 100 125 150 1 175 0.3 0 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) Source-Drain Diode Forward Voltage On-Resistance vs. Junction Temperature THERMAL RATINGS 60 500 Limited by RDS(on)* 100 I D - Drain Current (A) I D - Drain Current (A) 50 40 30 20 10 µs 100 µs 10 10 ms 100 ms 1 s, DC 1 TC = 25 °C Single Pulse 10 0 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) 0.1 0.1 * VGS Maximum Avalanche Drain Current vs. Case Temperature 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 30 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71187. www.vishay.com 4 Document Number: 71187 S-81225-Rev. D, 02-Jun-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000