SUD50N03-11
Vishay Siliconix
N-Channel 30-V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.011 at VGS = 10 V
50
0.017 at VGS = 4.5 V
43
VDS (V)
30
• TrenchFET® Power MOSFET
• 175 °C Maximum Junction Temperature
• 100 % Rg Tested
RoHS
COMPLIANT
D
TO-252
G
Drain Connected to Tab
G
D
S
S
Top View
Ordering Information: SUD50N03-11-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C
TC = 100 °C
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipation
37
TA = 25 °C
50
62.5c
PD
W
7.5b
TJ, Tstg
Operating Junction and Storage Temperature Range
A
100
IS
TC = 25 °C
V
50
ID
IDM
Pulsed Drain Current
Unit
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambientb
Symbol
t ≤ 10 s
Steady State
RthJA
Typical
Maximum
17
20
50
60
Junction-to-Case
RthJC
2
2.4
Junction-to-Lead
RthJL
4
4.8
Unit
°C/W
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board, t ≤ 10 s.
c. See SOA curve for voltage derating.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71187
S-81225-Rev. D, 02-Jun-08
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1
SUD50N03-11
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS = 0 V, ID = 250 µA
30
VGS(th)
VDS = VGS, ID = 250 µA
0.8
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
VDS = 24 V, VGS = 0 V
1
VDS = 24 V, VGS = 0 V, TJ = 125 °C
50
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentb
ID(on)
VDS = 5 V, VGS = 5 V
50
VGS = 10 V, ID = 25 A
Drain-Source On-State Resistanceb
VGS = 5 V, ID = 20 A, TJ = 125 °C
RDS(on)
gfs
VDS = 15 V, ID = 20 A
nA
µA
A
0.009
0.011
0.018
VGS = 4.5 V, ID = 15 A
Forward Transconductanceb
V
0.014
Ω
0.017
10
S
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
c
Gate-Source Charge
c
Gate-Drain Charge
Qgd
Rg
c
td(on)
Turn-Off Delay Timec
td(off)
Turn-On Delay Time
Fall Timec
tr
pF
400
175
12
Qgs
Gate Resistance
Rise Timec
1130
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 15 V, VGS = 5 V, ID = 50 A
20
nC
4
4.5
0.5
3.4
8
VDD = 15 V, RL = 0.3 Ω
ID ≅ 50 A, VGEN = 10 V, RG = 2.5 Ω
tf
Ω
12
10
15
18
30
6
9
ns
Source-Drain Diode Ratings and Characteristics TC = 25 °C
IS
50
Pulsed Current
ISM
80
Diode Forward Voltageb
VSD
IF = 100 A, VGS = 0 V
trr
IF = 50 A, dI/dt = 100 A/µs
Continuous Current
Source-Drain Reverse Recovery Time
30
A
1.5
V
50
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71187
S-81225-Rev. D, 02-Jun-08
SUD50N03-11
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
200
VGS = 10 thru 8 V
TC = - 55 °C
7V
80
160
120
I D - Drain Current (A)
I D - Drain Current (A)
6V
5V
80
4V
25 °C
60
125 °C
40
20
40
3V
2V
0
0
2
4
6
8
0
0
10
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.04
60
25 °C
40
125 °C
R DS(on) - On-Resistance (Ω)
g fs - Transconductance (S)
TC = - 55 °C
50
30
20
0.03
0.02
VGS = 4.5 V
VGS = 10 V
0.01
10
0.00
0
0
20
40
60
80
0
100
20
40
80
100
I D - Drain Current (A)
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
2000
VGS - Gate-to-Source Voltage (V)
10
1600
C - Capacitance (pF)
60
Ciss
1200
800
Coss
Crss
400
0
VDS = 15 V
ID = 50 A
8
6
4
2
0
0
5
10
15
20
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 71187
S-81225-Rev. D, 02-Jun-08
25
30
0
4
8
12
16
20
Qg - Total Gate Charge (nC)
Gate Charge
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SUD50N03-11
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
2.0
VGS = 10 V
ID = 25 A
I S - Source Current (A)
(Normalized)
R DS(on) - On-Resistance
1.6
1.2
0.8
TJ = 150 °C
TJ = 25 °C
10
0.4
0.0
- 50
- 25
0
25
50
75
100
125
150
1
175
0.3
0
0.6
0.9
1.2
1.5
VSD - Source-to-Drain Voltage (V)
TJ - Junction Temperature (°C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Junction Temperature
THERMAL RATINGS
60
500
Limited
by RDS(on)*
100
I D - Drain Current (A)
I D - Drain Current (A)
50
40
30
20
10 µs
100 µs
10
10 ms
100 ms
1 s, DC
1
TC = 25 °C
Single Pulse
10
0
0
25
50
75
100
125
150
175
TC - Case Temperature (°C)
0.1
0.1
* VGS
Maximum Avalanche Drain Current
vs. Case Temperature
1
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
30
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71187.
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Document Number: 71187
S-81225-Rev. D, 02-Jun-08
Legal Disclaimer Notice
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Vishay
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Revision: 01-Jan-2022
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Document Number: 91000
