SUM45N25-58-E3

New Product SUM45N25-58 Vishay Siliconix N-Channel 250-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 250 rDS(on) (Ω) ID (A) 0.058 at VGS = 10 V 45 0.062 at VGS = 6 V 43 • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • New Low Thermal Resistance Package RoHS COMPLIANT APPLICATIONS • Primary Side Switch • Plasma Display Panel Sustainer Function D TO-263 G G D S Top View Ordering Information: SUM45N25-58-E3 (Lead (Pb)-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Typical Avalanche Voltaged Gate-Source Voltage Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C Pulsed Drain Current Avalanche Current a Repetitive Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TA = 25 °Cc Symbol Limit VDS 250 VDS (Avalanche)Typ 300 VGS ± 30 Unit V 45 ID 25 IDM 90 IAR 35 EAR 61 375b PD 3.75 TJ, Tstg A mJ W - 55 to 175 °C Unit THERMAL RESISTANCE RATINGS Parameter Symbol Limit Junction-to-Ambient (PCB Mount)c RthJA 40 Junction-to-Case (Drain) RthJC 0.4 °C/W Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Guaranteed by design Document Number: 72314 S-70311-Rev. C, 12-Feb-07 www.vishay.com 1 New Product SUM45N25-58 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min V(BR)DSS VDS = 0 V, ID = 250 µA 250 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VDS = 0 V, VGS = ± 30 V Typ Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS 1 VDS = 250 V, VGS = 0 V, TJ = 125 °C 50 VDS = 250 V, VGS = 0 V, TJ = 175 °C 250 VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 20 A a Forward Transconductance ± 250 VDS = 250 V, VGS = 0 V ID(on) Drain-Source On-State Resistancea 4 rDS(on) gfs 70 V nA µA A 0.047 0.058 VGS = 10 V, ID = 20 A, TJ = 125 °C 0.121 VGS = 10 V, ID = 20 A, TJ = 175 °C 0.163 VGS = 6 V, ID = 15 A 0.049 VDS = 15 V, ID = 20 A 70 Ω 0.062 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg c Gate-Source Charge Qgs Gate-Drain Chargec Qgd c Rise Timec Turn-Off Delay Timec Fall Timec pF 300 170 95 VDS = 125 V, VGS = 10 V, ID = 45 A td(off) nC 28 Ω f = 1 MHz 1.6 22 35 VDD = 100 V, RL = 2.78 Ω ID ≅ 45 A, VGEN = 10 V, Rg = 2.5 Ω 220 330 40 60 145 220 td(on) tr 140 34 Rg Gate Resistance Turn-On Delay Time 5000 VGS = 0 V, VDS = 25 V, f = 1 MHz tf ns Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b IS 45 Pulsed Current ISM 70 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 45 A, VGS = 0 V trr IRM(REC) Qrr IF = 45 A, di/dt = 100 A/µs A 1.0 1.5 V 150 225 ns 12 18 A 0.9 2 µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72314 S-70311-Rev. C, 12-Feb-07 New Product SUM45N25-58 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 100 VGS = 10 thru 7 V 6V 80 I D - Drain Current (A) I D - Drain Current (A) 80 60 40 20 5V 60 40 TC = 125 °C 20 25 °C 4V - 55 °C 0 0 0 2 4 6 8 10 0 1 VDS - Drain-to-Source Voltage (V) 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 150 0.10 g fs - Transconductance (S) 120 25 °C 90 125 °C 60 30 r DS(on) - On-Resistance (Ω) TC = - 55 °C 0.06 VGS = 6 V VGS = 10 V 0.04 0.02 0.00 0 0 10 20 30 40 50 0 60 20 40 60 80 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 100 20 7000 V GS - Gate-to-Source Voltage (V) 6000 Ciss C - Capacitance (pF) 0.08 5000 4000 3000 2000 Crss 1000 Coss VDS = 125 V ID = 45 A 16 12 8 4 0 0 0 40 80 120 160 200 0 30 60 90 120 150 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge Document Number: 72314 S-70311-Rev. C, 12-Feb-07 180 www.vishay.com 3 New Product SUM45N25-58 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.8 100 VGS = 10 V ID = 20 A I S - Source Current (A) r DS(on) - On-Resistance (Normalized) 2.4 2.0 1.6 1.2 TJ = 150 °C TJ = 25 °C 10 0.8 0.4 - 50 - 25 0 25 50 75 100 125 150 1 0 175 0.3 TJ - Junction Temperature (°C) 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 100 300 290 V (BR)DSS (V) ID = 1.0 mA I Dav (a) 10 IAV (A) at TA = 25 °C 280 270 260 1 250 240 IAV (A) at TA = 150 °C 0.1 0.00001 www.vishay.com 4 0.0001 0.001 0.01 0.1 1 230 - 50 - 25 0 25 50 75 100 125 tin (Sec) TJ - Junction Temperature (°C) Avalanche Current vs. Time Drain Source Breakdown vs. Junction Temperature 150 175 Document Number: 72314 S-70311-Rev. C, 12-Feb-07 New Product SUM45N25-58 Vishay Siliconix THERMAL RATINGS 100 50 10 µs Limited by rDS(on) I D - Drain Current (A) I D - Drain Current (A) 40 30 20 100 µs 10 1 ms 10 ms 1 100 ms dc TC = 25 °C Single Pulse 10 0 0.1 0 25 50 75 100 125 150 175 0.1 TC - Ambient Temperature (°C) 1 10 100 1000 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Case Temperature Maximum Avalanche and Drain Current vs. Case Temperature 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72314. Document Number: 72314 S-70311-Rev. C, 12-Feb-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1