UGB10CCT-E3/81

BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT www.vishay.com Vishay General Semiconductor Dual Common Cathode Ultrafast Rectifier TO-220AB FEATURES ITO-220AB • Power pack • Glass passivated pellet chip junction • Ultrafast recovery times • Soft recovery characteristics 2 • Low switching losses, high efficiency 3 1 1 BYQ28E, UG10 2 3 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C for D2PAK (TO-263AB package) BYQ28EF, UGF10 PIN 1 PIN 2 PIN 1 PIN 3 CASE PIN 3 • High forward surge capability PIN 2 • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB and ITO-220AB package) D2PAK (TO-263AB) • AEC-Q101 qualified available K - Automotive ordering code: base P/NHE3 (for ITO-220AB and D2PAK (TO-263AB package)) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 1 BYQ28EB, UGB10 PIN 1 PIN 2 TYPICAL APPLICATIONS K For use in low voltage, high frequency rectifier of switching power supplies, freewheeling diodes, DC/DC converters and polarity protection application. HEATSINK DESIGN SUPPORT TOOLS AVAILABLE 3D 3D MECHANICAL DATA 3D Models Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,....) PRIMARY CHARACTERISTICS IF(AV) 2 x 5.0 A VRRM 100 V to 200 V IFSM 55 A trr 25 ns VF 0.895 V Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test TJ max. 150 °C Package TO-220AB, ITO-220AB, D2PAK (TO-263AB) Circuit configuration Common cathode Polarity: as marked Mounting Torque: 10 in-lbs max. MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL UG10BCT UG10CCT UG10DCT BYQ28E-100 BYQ28E-150 BYQ28E-200 UNIT Maximum repetitive peak reverse voltage VRRM 100 150 200 V Working peak reverse voltage VRWM 100 150 200 V Maximum DC blocking voltage VDC 100 150 200 V Maximum average forward rectified current at TC = 100 °C total device per diode IF(AV) 10 5.0 A Peak forward surge current 8.3 ms single half sine-wave IFSM 55 A Non-repetitive peak reverse current per diode at tp = 100 μs IRSM 0.2 A VC 8 kV TJ, TSTG -40 to +150 °C VAC 1500 V Electrostatic discharge capacitor voltage, human body model: C = 250 pF, R = 1.5 k Operating junction and storage temperature range Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Revision: 05-Jun-2019 Document Number: 88549 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage per diode IF = 10 A SYMBOL VF (1) 1.10 TJ = 150 °C V 0.895 TJ = 25 °C Maximum reverse current per diode at working peak reverse voltage UNIT 1.25 TJ = 25 °C IF = 5 A VALUE 10 IR TJ = 100 °C μA 200 Maximum reverse recovery time per diode IF = 1.0 A, dI/dt = 100 A/μs, VR = 30 V, Irr = 0.1 IRM trr 25 Maximum reverse recovery time per diode IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 20 ns Maximum stored charge per diode IF = 2 A, dI/dt = 20 A/μs, VR = 30 V, Irr = 0.1 IRM Qrr 9 nC ns Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL UG10 UGF10 UGB10 BYQ28E BYQ28EF BYQ28EB Typical thermal resistance per diode, junction to ambient RJA 50 55 50 Typical thermal resistance per diode, junction to case RJC 4.5 6.7 4.8 UNIT °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE Tube TO-220AB BYQ28E-200-E3/45 1.80 45 50/tube ITO-220AB BYQ28EF-200-E3/45 1.95 45 50/tube Tube D2PAK (TO-263AB) BYQ28EB-200-E3/45 1.77 45 50/tube Tube D2PAK (TO-263AB) BYQ28EB-200-E3/81 1.77 81 800/reel Tape and reel ITO-220AB BYQ28EF-200HE3_A/P (1) 1.95 P 50/tube Tube D2PAK (TO-263AB) BYQ28EB-200HE3_A/P (1) 1.95 P 50/tube Tube D2PAK (TO-263AB) BYQ28EB-200HE3_A/I (1) 1.95 I 800/reel Tape and reel Note AEC-Q101 qualified, available in ITO-220AB and D2PAK (TO-263AB) package (2) Revision: 05-Jun-2019 Document Number: 88549 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 15 Instantaneous Reverse Current (μA) 1000 Average Forward Current (A) Resistive or Inductive Load 10 5 TJ = 100 °C 100 10 1 TJ = 25 °C 0.1 0 50 0 150 100 0 40 60 80 Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics Per Diode Stored Charge/Reverse Recovery Time (nC/ns) TC = 105 °C 8.3 ms Single Half Sine-Wave 10 10 1 50 at 2 A, 20 A/μs 40 at 5 A, 50 A/μs 30 at 1 A, 100 A/μs 20 at 5 A, 50 A/μs at 1 A, 100 A/μs 10 trr Qrr at 2 A, 20 A/μs 0 25 100 50 75 100 125 Junction Temperature (°C) Number of Cycles at 60 Hz Fig. 5 - Reverse Switching Characteristics Per Diode Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode 100 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 Junction Capacitance (pF) Pulse Width = 300 μs 1 % Duty Cycle TJ = 125 °C TJ = 100 °C 1 0.1 0.01 0.2 100 Percent of Rated Peak Reverse Voltage (%) 1 Instantaneous Forward Current (A) 20 Case Temperature (°C) 100 Peak Forward Surge Current (A) TJ = 125 °C TJ = 25 °C 0.4 0.6 0.8 1.0 1.2 1.4 10 1 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Junction Capacitance Per Diode Revision: 05-Jun-2019 Document Number: 88549 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSION in inches (millimeters) TO-220AB 0.415 (10.54) max. 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.154 (3.91) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) PIN 1 2 3 0.635 (16.13) 0.625 (15.87) 0.160 (4.06) 0.140 (3.56) 0.145 (3.68) 0.135 (3.43) 0.057 (1.45) 0.045 (1.14) 0.035 (0.90) 0.028 (0.70) 0.104 (2.65) 0.096 (2.45) 0.022 (0.56) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) ITO-220AB 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) REF. 7° REF. 0.076 (1.93) REF. 45° REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.671 (17.04) 0.651 (16.54) PIN 1 2 3 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7° REF. 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.035 (0.89) 0.025 (0.64) 0.025 (0.64) 0.015 (0.38) 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 7° REF. 0.350 (8.89) 0.330 (8.38) 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) D2PAK (TO-263AB) 0.411 (10.45) 0.380 (9.65) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.105 (2.67) 0.095 (2.41) 0.600 (15.24) 0.580 (14.73) 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. Mounting Pad Layout 0.42 (10.66) min. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) min. 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) min. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 05-Jun-2019 Document Number: 88549 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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