VCUT0714A-HD1-GS08

VCUT0714A-HD1 www.vishay.com Vishay Semiconductors Bidirectional Asymmetrical (BiAs) Single Line ESD Protection Diode in LLP1006-2L FEATURES • Ultra compact LLP1006-2L • Low package height < 0.4 mm 2 1 • 1-line ESD protection • Working range -7 V up to +14 V or -14 V up to +7 V 20950 • Low leakage current < 0.1 μA 20855 • Low load capacitance typical CD = 8 pF MARKING (example only) • ESD immunity acc. IEC 61000-4-2 ± 25 kV contact discharge ± 30 kV air discharge XY • e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn) 21121 • PATENT(S): www.vishay.com/patents Bar = pin 1 marking Y = type code (see table below) X = date code • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models ORDERING INFORMATION PIN PLATING e4 DEVICE NAME VCUT0714A-HD1 ORDERING CODE TAPED UNITS PER REEL (8 mm TAPE ON 7" REEL) MINIMUM ORDER QUANTITY VCUT0714A-HD1-GS08 8k 8k PACKAGE DATA PACKAGE NAME PIN PLATING TYPE CODE WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS LLP1006-2L e4 B 0.72 mg UL 94 V-0 MSL level 1 (according J-STD-020) Peak temperature max. 260 °C DEVICE NAME VCUT0714A-HD1 ABSOLUTE MAXIMUM RATINGS PARAMETER Peak pulse current Peak pulse power ESD immunity TEST CONDITIONS Pin 1 to pin 2, acc. IEC 61000-4-5, 8/20 μs/single shot Pin 2 to pin 1, acc. IEC 61000-4-5, 8/20 μs/single shot Pin 1 to pin 2, acc. IEC 61000-4-5, 8/20 μs/single shot Pin 2 to pin 1, acc. IEC 61000-4-5, 8/20 μs/single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Storage temperature Operating temperature Junction temperature SYMBOL IPPM PPP VESD VALUE UNIT 5 A 2 A 63 W 54 W ± 25 kV ± 30 kV TSTG -55 to +150 °C TJ -40 to +125 °C PATENT(S): www.vishay.com/patents This Vishay product is protected by one or more United States and international patents. Rev. 2.5, 04-May-2020 Document Number: 81801 1 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VCUT0714A-HD1 www.vishay.com Vishay Semiconductors CUT THE SPIKES The VCUT0714A-HD1 is a bidirectional but asymmetrical (BiAs) ESD protection device which clamps positive and negative overvoltage transients to ground. Connected between the signal or data line and the ground the VCUT0714A-HD1 offers a high isolation (low leakage current, small capacitance) within the specified working range of -7 V to +14 V or -14 V and +7 V. Due to the short leads and small package size of the tiny LLP1006 package the line inductance is very low, so that fast transients like an ESD strike can be clamped with minimal over- or undershoots. - 14 V ≤ VRW ≤ + 7 V 1 1 2 - 7 V ≤ VRW ≤ + 14 V 2 Ground Ground 22286 ELECTRICAL CHARACTERISTICS (pin 2 to pin 1) (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines Max. reverse working voltage VRWM - - 14 V Reverse voltage At IR = 0.1 μA VR 14 - - V Reverse current At VRWM = 14 V IR - - 0.1 μA At IR = 1 mA VBR 14.5 - - V V Protection paths Reverse stand-off voltage Reverse breakdown voltage Reverse clamping voltage Capacitance At IPP = 1 A VC - - 27 At IPP = IPPM = 2 A VC - - 30 V At VR = 0 V; f = 1 MHz CD - 8 8.5 pF At VR = 7 V; f = 1 MHz CD - 4 - pF ELECTRICAL CHARACTERISTICS (pin 1 to pin 2) (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines Max. reverse working voltage VRWM - - 7 V Reverse voltage At IR = 0.1 μA VR 7 - - V Reverse current At VRWM = 7 V IR - - 0.1 μA At IR = 1 mA VBR 7.3 - - V At IPP = 1 A VC - - 13 V Protection paths Reverse stand-off voltage Reverse breakdown voltage Reverse clamping voltage Capacitance Rev. 2.5, 04-May-2020 At IPP = IPPM = 5 A VC - - 17 V At V = 0 V; f = 1 MHz CD - 8 8.5 pF At V = 3.5 V; f = 1 MHz CD - 6.4 - pF Document Number: 81801 2 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VCUT0714A-HD1 www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Axis Title 120 25 10000 Rise time = 0.7 ns to 1 ns 100 80 53 40 15 VR (V) 60 2nd line 1000 1st line 2nd line 2nd line IESD (%) Pin 2 to 1 20 10 Pin 1 to 2 100 27 5 20 0 0 0.01 10 -10 0 10 20 30 40 50 60 70 80 90 100 20557 t (ns) 0.1 1 20577 2nd line Fig. 1 - ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 Ω/150 pF) 10 IR (µA) 100 1000 10 000 Fig. 4 - Typical Reverse Voltage VR vs. Reverse Current IR Axis Title 35 10000 100 8 µs to 100 % 80 25 20 µs to 50 % 40 VC (V) VC 1st line 2nd line 2nd line IPPM (%) 1000 60 20 15 Pin 1 to 2 100 10 20 Measured acc. IEC 61000-4-5 (8/20 µs - wave form) 5 0 10 0 10 20 30 0 40 t (µs) 2nd line 20548 0 80 f = 1 MHz 7 2 3 4 5 6 7 Fig. 5 - Typical Peak Clamping Voltage VC vs. Peak Pulse Current IPP 9 8 1 IPP (A) 20578 Fig. 2 - 8/20 μs Peak Pulse Current Wave Form acc. IEC 61000-4-5 70 Acc. IEC 61000-4-2 +8 kV contact discharge 60 Pin 1 to 2 VC-ESD (V) 6 CD (pF) Pin 2 to 1 30 5 Pin 2 to 1 4 50 40 30 3 20 2 10 1 Pin 1 to 2 0 0 0 2 20576 4 6 8 10 12 14 16 VR (V) Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR Rev. 2.5, 04-May-2020 -10 -10 0 20579 10 20 30 40 50 60 70 80 90 t (ns) Fig. 6 - Typical Clamping Performance at + 8 kV Contact Discharge (acc. IEC 61000-4-2) Document Number: 81801 3 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VCUT0714A-HD1 www.vishay.com Vishay Semiconductors 10 50 Acc. IEC 61000-4-2 -8 kV contact discharge 0 40 -10 Pi n 2-1 -30 -40 -50 30 2nd line VC-TLP (V) VC-ESD (V) -20 Pin 1 to 2 20 -60 Pi n 1-2 10 Transmission line pulse (TLP): tp = 100 ns -70 -80 -10 0 0 0 10 20 30 40 50 60 70 80 90 20580 10 23105 t (ns) Fig. 7 - Typical Clamping Performance at - 8 kV Contact Discharge (acc. IEC 61000-4-2) 20 30 ITLP (A) 2nd line Fig. 8 - Typical Peak Clamping Voltage vs. Peak Pulse Current 0.25 [0.010] 0.15 [0.006] PACKAGE DIMENSIONS in millimeters (inches): LLP1006-2L 0.65 [0.026] 0.55 [0.022] Orientation identification 0.05 [0.002] 0 [0.000] 0.4 [0.016] 0.33 [0.013] 0.45 [0.018] 0.35 [0.014] 0.125 [0.005] ref. 0.55 [0.022] 0.45 [0.018] 0.3 [0.012] 0.2 [0.008] 1.05 [0.041] 0.95 [0.037] 1 [0.039] 0.2 [0.008] 0.5 [0.020] 0.6 [0.024] Foot print recommendation: Solder resist mask Solder pad 0.05 [0.002] 0.5 [0.020] 0.25 [0.010] Pad Design Patented: ( P US 9.018.537 B2) Document no.: S8-V-3906.04-005 (4) Rev. 7 - Date: 11.May 2016 20812 Rev. 2.5, 04-May-2020 Document Number: 81801 4 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VCUT0714A-HD1 www.vishay.com Vishay Semiconductors Unreeling direction LLP1006-2X Orientation identification Top view S8-V-3906.04-017 (4) 02.05.2017 22965 Rev. 2.5, 04-May-2020 Pad layout - view from top seen at bottom side Document Number: 81801 5 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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