VS-10ETS12FP-M3

VS-10ETS08FP-M3, VS-10ETS12FP-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 10 A FEATURES • Very low forward voltage drop • 150 °C max. operating junction temperature • Glass passivated pellet chip junction 1 Cathode 1 2 Anode 2 • Designed and qualified JEDEC®-JESD 47 according to • Fully isolated package (VINS = 2500 VRMS) 2L TO-220 FullPAK • UL pending • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) 10 A VR 800 V to 1200 V VF at IF 1.1 V IFSM 160 A TJ max. 150 °C Package 2L TO-220 FullPAK Circuit configuration Single APPLICATIONS • Input rectification • Vishay Semiconductors switches and output rectifiers which are available in identical package outlines DESCRIPTION High voltage rectifiers optimized for very low forward voltage drop with moderate leakage. These devices are intended for use in main rectification (single or three phase bridge). OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS 12.0 16.0 A VALUES UNITS Capacitive input filter TA = 55 °C, TJ = 125 °C common heatsink  of 1 °C/W MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Sinusoidal waveform VRRM Range IFSM VF 10 A, TJ = 25 °C TJ 10 A 800, 1200 V 160 A 1.1 V -40 to +150 °C VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VS-10ETS08FP-M3 800 900 VS-10ETS12FP-M3 1200 1300 0.5 Revision: 15-Sep-17 Document Number: 96295 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETS08FP-M3, VS-10ETS12FP-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current IF(AV) TC = 105 °C, 180° conduction half sine wave 10 Maximum peak one cycle  non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t 10 ms sine pulse, rated VRRM applied 135 10 ms sine pulse, no voltage reapplied 160 UNITS A 10 ms sine pulse, rated VRRM applied 91 10 ms sine pulse, no voltage reapplied 130 t = 0.1 ms to 10 ms, no voltage reapplied 1300 A2s VALUES UNITS A2s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL VFM Maximum forward voltage drop rt Forward slope resistance VF(TO) Threshold voltage IRM Maximum reverse leakage current TEST CONDITIONS 10 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C VR = Rated VRRM TJ = 150 °C 1.1 V 20 m 0.82 V 0.05 mA 0.50 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance,  junction to ambient RthJA Typical thermal resistance,  case to heatsink RthCS TEST CONDITIONS DC operation Marking device UNITS -40 to +150 °C 2.5 62 Mounting surface, smooth, and greased °C/W 0.5 2 g 0.07 oz. minimum 6 (5) kgf · cm maximum 12 (10) (lbf · in) Approximate weight Mounting torque VALUES Case style 2L TO-220 FullPAK 10ETS08FP 10ETS12FP Revision: 15-Sep-17 Document Number: 96295 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETS08FP-M3, VS-10ETS12FP-M3 Vishay Semiconductors 150 RthJC (DC) = 2.5 °C/W 140 130 Ø Conduction angle 120 110 100 30° 60° 90 90° 120° 180° 80 0 2 4 6 8 10 12 Average Forward Current (A) Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) www.vishay.com 20 16 14 12 10 Ø Conduction period 120 30° 60° 100 90° 120° 180° DC 90 0 2 4 6 8 10 12 14 16 18 Average Forward Current (A) Peak Half Sine Wave Forward Current (A) Maximum AllowableCase Temperature (°C) 140 110 4 2 0 0 180° 120° 90° 60° 30° 14 12 10 RMS limit 8 6 Ø 4 Conduction angle 2 TJ = 150 °C 0 0 2 4 6 8 2 4 6 8 10 12 16 14 Average Forward Current (A) 150 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 140 130 120 110 100 90 80 70 60 50 40 30 1 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 10 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) Fig. 2 - Current Rating Characteristics 16 Ø Conduction period 6 Fig. 4 - Forward Power Loss Characteristics RthJC (DC) = 2.5 °C/W 130 RMS limit 8 Fig. 1 - Current Rating Characteristics 150 DC 180° 120° 90° 60° 30° 18 170 150 130 Maximum non-repetitive surge current vs. pulse train duration. Initial TJ = TJ max. No voltage reapplied Rated VRRM reapplied 110 90 70 50 30 10 0.01 0.1 1 10 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 15-Sep-17 Document Number: 96295 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETS08FP-M3, VS-10ETS12FP-M3 Instantaneous Forward Current (A) www.vishay.com Vishay Semiconductors 100 TJ = 25 °C TJ = 150 °C 10 1 0 0.5 1.0 1.5 2.0 2.5 3.0 Instantaneous Forward Voltage (V) ZthJC - Transient Thermal Impedance (°C/W) Fig. 7 - Forward Voltage Drop Characteristics 10 Steady state value (DC operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 0.1 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Revision: 15-Sep-17 Document Number: 96295 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETS08FP-M3, VS-10ETS12FP-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 10 E T S 12 FP -M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (10 = 10 A) 3 - Circuit configuration: E = single diode 4 - Package: T = TO-220 5 - Type of silicon: S = standard recovery rectifier 6 - Voltage rating 7 - FullPAK 8 - Environmental digit: 08 = 800 V 12 = 1200 V -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-10ETS08FP-M3 50 1000 Antistatic plastic tubes VS-10ETS12FP-M3 50 1000 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96157 Part marking information www.vishay.com/doc?95392 Revision: 15-Sep-17 Document Number: 96295 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 2L TO-220 FullPAK DIMENSIONS in millimeters 3.40 Hole Ø 3.10 10.6 10.0 3.7 3.2 2.80 2.44 7.31 6.50 16.0 15.8 Mold flash bleeding 3.3 3.1 Exposed Cu 13.56 12.90 2.54 TYP. 0.61 0.38 0.9 0.7 2.85 2.65 1.20 1.47 1.30 1.05 2.54 TYP. Bottom view R 0.7 (2 places) R 0.5 4.8 4.6 5° ± 0.5° 5° ± 0.5° Revision: 06-Jul-17 Document Number: 96157 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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