VS-90EPS12L-M3

VS-90EPS..L-M3, VS-90APS..L-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 90 A FEATURES • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Glass passivated pallet chip junction 1 1 • Designed and qualified JEDEC®-JESD 47 2 3 3 Base cathode Base cathode APPLICATIONS 2 2 to • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TO-247AD 3L TO-247AD 2L according • Input rectification for single and three phase bridge configurations • Off-board EV/HEV battery chargers • Renewable energy inverters 1 Cathode 3 Anode Anode 1 VS-90EPS..L • Input rectification for single and three phase bridge configurations • Vishay Semiconductors switches and output rectifiers which are available in identical package outlines Anode 3 VS-90APS..L DESCRIPTION PRIMARY CHARACTERISTICS IF(AV) 90 A VR 800 V to 1200 V VF at IF 1.20 V High voltage rectifiers optimized for very low forward voltage drop with moderate leakage. These devices are intended for use in main rectification (single or three phase bridge). IFSM 1100 A TJ max. 150 °C Package TO-247AD 2L, TO-247AD 3L Circuit configuration Single     MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Sinusoidal waveform VRRM Range IFSM VF 90 A, TJ = 25 °C TJ VALUES UNITS 90 A 800 to 1200 V 1100 A 1.20 V -40 to +150 °C VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VS-90EPS08L-M3, VS-90APS08L-M3 800 900 VS-90EPS12L-M3, VS-90APS12L-M3 1200 1300 1.5 Revision: 10-Jul-2018 Document Number: 93396 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-90EPS..L-M3, VS-90APS..L-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle  non-repetitive surge current SYMBOL TEST CONDITIONS IF(AV) TC = 112 °C, 180° conduction half sine wave 90 10 ms sine pulse, rated VRRM applied 915 10 ms sine pulse, no voltage reapplied 1100 10 ms sine pulse, rated VRRM applied 4185 10 ms sine pulse, no voltage reapplied 6050 IFSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied VALUES UNITS A A2s 60 500 A2s VALUES UNITS 1.20 V 3.17 m 0.73 V ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL VFM Maximum forward voltage drop rt Forward slope resistance VF(TO) Threshold voltage IRM Maximum reverse leakage current TEST CONDITIONS 90 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C VR = Rated VRRM TJ = 150 °C 0.1 1.5 mA THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage  temperature range TJ, TStg Maximum thermal resistance,  junction to case RthJC Maximum thermal resistance,  junction to ambient RthJA Typical thermal resistance,  case to heatsink RthCS TEST CONDITIONS DC operation Marking device UNITS -40 to +150 °C 0.2 40 Mounting surface, flat, smooth and greased minimum maximum °C/W 0.25 6 Approximate weight Mounting torque VALUES g 0.21 oz. 6 (5) kgf · cm (lbf · in) 12 (10) Case style TO-247AD 2L 90EPS08L, 90EPS12L Case style TO-247AD 3L 90APS08L, 90APS12L Revision: 10-Jul-2018 Document Number: 93396 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-90EPS..L-M3, VS-90APS..L-M3 150 RthJC (DC) = 0.2 °C/W 140 Ø Conduction angle 130 120 30° 110 60° 90° 120° 100 180° 90 0 20 40 60 80 100 Ø 130 30° 60° 110 90° 100 120° 180° DC 90 20 40 60 80 100 120 140 160 Average On-State Current (A) 100 RMS limit 80 Ø Conduction Angle 60 DC 40 20 TJ = 150 °C 0 0 20 40 60 80 100 120 140 RMS limit Ø Conduction angle TJ = 150 °C 40 60 80 100 Average On-State Current (A) Fig. 3 - Forward Power Loss Characteristics Peak Half Sine Wave Forward Current (A) 180° 120° 90° 60° 30° 20 1000 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 900 800 700 600 500 400 300 90EPS..L 200 100 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 2 - Current Rating Characteristics Max. Average On-State Power Loss (W) 120 Fig. 4 - Forward Power Loss Characteristics Conduction angle 0 140 Fig. 1 - Current Rating Characteristics 140 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 180° 120° 90° 60° 30° 160 Average On-state Current (A) RthJC (DC) = 0.2 °C/W 0 180 Average On-State Current (A) 150 120 Max. Average On-state Power Loss (W) Vishay Semiconductors Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) www.vishay.com 1200 Maximum non-repetitive surge current vs. pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 1100 1000 900 800 700 600 500 400 300 200 90EPS..L 100 0.01 0.1 1 10 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 10-Jul-2018 Document Number: 93396 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-90EPS..L-M3, VS-90APS..L-M3 Instantaneous Forward Current (A) www.vishay.com Vishay Semiconductors 1000 100 TJ = 25 °C 10 TJ = 150 °C 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Instantaneous Forward Voltage (V) ZthJC - Transient Thermal Impedance (°C/W) Fig. 7 - Forward Voltage Drop Characteristics 1 0.5 0.1 0.33 0.25 0.17 0.08 Single pulse 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Revision: 10-Jul-2018 Document Number: 93396 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-90EPS..L-M3, VS-90APS..L-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 90 A P S 12 L -M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (90 = 90 A) 3 - Circuit configuration: E = single diode, 2 pins A = single diode, 3 pins 4 - Package: P = TO-247AD 5 - Type of silicon: S = standard recovery rectifier 08 = 800 V 12 = 1200 V 6 - Voltage ratings 7 - L = long leads 8 - Environmental digit: -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-90EPS08L-M3 25 500 Antistatic plastic tubes VS-90APS08L-M3 25 500 Antistatic plastic tubes VS-90EPS12L-M3 25 500 Antistatic plastic tubes VS-90APS12L-M3 25 500 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information TO-247AD 2L www.vishay.com/doc?95536 TO-247AD 3L www.vishay.com/doc?95626 TO-247AD 2L www.vishay.com/doc?95648 TO-247AD 3L www.vishay.com/doc?95007 Revision: 10-Jul-2018 Document Number: 93396 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AD 2L DIMENSIONS in millimeters and inches A A (3) (6) F P E B (2) R/2 A2 S (Datum B) Ø K M D BM F P1 A D2 Q 2xR (2) D1 (4) D 1, 2 4 D 3 Thermal pad (5) L1 C L See view B (4) E1 A 0.01 M D B M View A - A C 2 x b2 2xb 2x e A1 0.10 M C A M (b1, b3) Plating Base metal D D (c) c1 C C (b, b2) (4) Section C - C, D - D SYMBOL MILLIMETERS View B INCHES MIN. MAX. MIN. MAX. A 4.65 5.31 0.183 0.209 A1 2.21 2.59 0.087 0.102 NOTES SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. E 15.29 15.87 0.602 0.625 E1 13.46 - 0.53 - A2 1.50 2.49 0.059 0.098 e 5.46 BSC b 0.99 1.40 0.039 0.055 ØK 0.254 b1 0.99 1.35 0.039 0.053 L 19.81 20.32 0.780 0.800 b2 1.65 2.39 0.065 0.094 L1 3.71 4.29 0.146 0.169 b3 1.65 2.34 0.065 0.092 ØP 3.56 3.66 0.14 0.144 c 0.38 0.89 0.015 0.035 Ø P1 - 6.98 - 0.275 NOTES 3 0.215 BSC 0.010 c1 0.38 0.84 0.015 0.033 Q 5.31 5.69 0.209 0.224 D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 0.178 0.216 D1 13.08 - 0.515 - 4 S D2 0.51 1.35 0.020 0.053 5.51 BSC 0.217 BSC Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 28-May-2018 Document Number: 95536 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AD 3L DIMENSIONS in millimeters and inches A A (3) (6) Φ P E B (2) R/2 A2 S (Datum B) Ø K M DBM Φ P1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L (4) E1 A 0.01 M D B M View A - A See view B 2 x b2 3xb C 2x e b4 A1 0.10 M C A M (b1, b3, b5) Plating Base metal D DE (c) c1 E C C (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 2.59 3.43 2.59 3.38 0.38 0.89 0.38 0.84 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.102 0.135 0.102 0.133 0.015 0.035 0.015 0.033 0.776 0.815 0.515 - View B NOTES 3 4 SYMBOL D2 E E1 e ØK L L1 ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.46 5.46 BSC 0.254 19.81 20.32 3.71 4.29 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.53 0.215 BSC 0.010 0.780 0.800 0.146 0.169 0.14 0.144 0.275 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 06-Mar-2020 Document Number: 95626 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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