End of Life July-2021 - Alternative Device: VSMY98545ADS
VSMY98545DS
www.vishay.com
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm,
Surface Emitter Technology
FEATURES
• Package type: surface-mount
• Double stack technology
• Package form: high power SMD with lens
• Dimensions (L x W x H in mm): 3.85 x 3.85 x 2.24
DESCRIPTION
As part of the SurfLightTM portfolio, the VSMY98545DS is an
infrared, 850 nm emitting diode based on surface emitter
technology with high radiant power and high speed, molded
in low thermal resistance SMD package with lens. A 42 mil
chip provides outstanding radiant intensity and allows
DC operation of the device up to 1 A. Superior ESD
characteristics are ensured by an integrated Zener diode.
•
•
•
•
•
•
Peak wavelength: λp = 850 nm
Zener diode for ESD protection up to 2 kV
High radiant power
High radiant intensity
Angle of half intensity: ϕ = ± 45°
Designed for high drive currents: up to 1 A (DC) and up
to 5 A pulses
•
•
•
•
Low thermal resistance: RthJP = 10 K/W
Floor life: 168 h, MSL 3, acc. J-STD-020
Lead (Pb)-free reflow soldering
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
•
•
•
•
Infrared illumination for CMOS cameras (CCTV)
Illumination for cameras (3D gaming)
Machine vision
3D TV
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (°)
λp (nm)
tr (ns)
VSMY98545DS
600
± 45
850
30
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VSMY98545DS
Tape and reel
MOQ: 600 pcs, 600 pcs/reel
High power with lens
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
Reverse voltage
TEST CONDITION
VR
5
UNIT
V
Forward current
IF
1
A
A
Peak forward current
tp/T = 0.5, tp = 100 μs
IFM
2
Surge forward current
tp = 100 μs
IFSM
5
A
Power dissipation
PV
3.6
W
Junction temperature
Tj
125
°C
Operating temperature range
Tamb
-40 to +110
°C
Storage temperature range
Tstg
-40 to +125
°C
According to Fig. 10, J-STD-20
Tsd
260
°C
According to J-STD-051, soldered on PCB
RthJP
10
K/W
Soldering temperature
Thermal resistance junction-to-pin
Rev. 1.1, 15-Jul-2020
Document Number: 84236
1
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
End of Life July-2021 - Alternative Device: VSMY98545ADS
VSMY98545DS
www.vishay.com
Vishay Semiconductors
1
3.5
IF - Forward Current (A)
PV - Power Dissipation (W)
4
3
2.5
2
RthJA = 10 K/W
1.5
1
0.8
0.6
RthJA = 10 K/W
0.4
0.2
0.5
0
0
0
20
40
60
80
100
120
0
20
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
40
60
80
100
120
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF = 1 A, tp = 20 ms
VF
-
3.2
3.6
V
IF = 5 A, tp = 100 μs
VF
-
4.6
-
V
Temperature coefficient of VF
IF = 1 A
TKVF
-
-2.2
-
mV/K
Reverse current
VR = 5 V
IR
-
-
10
μA
IF = 1 A, tp = 20 ms
Ie
300
600
900
mW/sr
IF = 5 A, tp = 100 μs
Ie
-
2800
-
mW/sr
IF = 1 A, tp = 20 ms
φe
-
1070
-
mW
IF = 1 A
TKφe
-
-
-
%/K
ϕ
-
± 45
-
°
Radiant intensity
Radiant power
Temperature coefficient of φe
Angle of half intensity
Peak wavelength
IF = 1 A
λp
830
850
870
nm
Spectral bandwidth
IF = 1 A
Δλ
-
50
-
nm
Temperature coefficient of λp
IF = 1 A
TKλp
-
0.3
-
nm/K
Rise time
IF = 1 A
tr
-
30
-
ns
Fall time
IF = 1 A
tf
-
30
-
ns
Rev. 1.1, 15-Jul-2020
Document Number: 84236
2
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
End of Life July-2021 - Alternative Device: VSMY98545ADS
VSMY98545DS
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10 000
Ie - Radiant Intensity (mW/sr)
10 000
IF - Forward Current (mA)
tp = 100 μs
1000
100
tp = 100 μs
1000
100
10
1
2.0
3.0
4.0
100
5.0
VF - Forward Voltage (V)
IF = 1000 mA
tp = 20 ms
VF - Forward Voltage (V)
3.70
3.60
3.50
3.40
3.30
3.20
3.10
3.00
-60 -40 -20
0
20
40
60
80
Fig. 6 - Radiant Intensity vs. Forward Current
Ie, rel - Relative Radiant Intensity (%)
4.00
3.80
150
IF = 1000 mA
tp = 20 ms
140
130
120
110
100
90
80
70
60
50
100
-50
Tamb - Ambient Temperature (°C)
120
IF = 1000 mA
tp = 20 ms
110
105
100
95
90
85
80
-60 -40 -20
0
20
40
60
80 100
Tamb - Ambient Temperature (°C)
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Rev. 1.1, 15-Jul-2020
-25
0
25
50
75
100
Tamb - Ambient Temperature (°C)
Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature
Ie, rel - Relative Radiant Intensity (%)
VF, rel - Relative Forward Voltage (%)
Fig. 4 - Forward Voltage vs. Ambient Temperature
115
10 000
IF - Forward Current (mA)
Fig. 3 - Forward Current vs. Forward Voltage
3.90
1000
100
IF = 1000 mA
90
80
70
60
50
40
30
20
10
0
700
750
800
850
900
950
1000
λ - Wavelength (nm)
Fig. 8 - Relative Radiant Intensity vs. Wavelength
Document Number: 84236
3
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
End of Life July-2021 - Alternative Device: VSMY98545ADS
VSMY98545DS
www.vishay.com
10°
20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.6
0.4
0.2
ϕ - Angular Displacement
Ie, rel - Relative Radiant Intensity
0°
Vishay Semiconductors
0
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
TAPING DIMENSIONS in millimeters
Ø 60.0 ± 1.0
(2.36 ± 0.039)
Ø 178 ± 2.0
(7.0 ± 0.08)
Ø 13.0
(0.512)
typ.
14.40 (0.57) typ.
Notes
• Empty component pockets sealed with top cover tape.
• 7 inch reel - 600 pieces per reel.
• The maximum number of consecutive missing lamps is two.
• In accordance with ANSI/EIA 481-1-A-1994 specifications.
8.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.05
Cathode
Ø 1.50 + 0.10
1.75 ± 0.10
12.00 + 0.30
- 0.10
5.50 ± 0.05
Ø 1.50 + 0.25
Rev. 1.1, 15-Jul-2020
Document Number: 84236
4
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
End of Life July-2021 - Alternative Device: VSMY98545ADS
VSMY98545DS
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
1.90
Cathode
3.85 ± 0.1
.76
2.70
Ø2
Anode
1.00
3.85 ± 0.1
2.80
38
.
R0
2.24 ± 0.1
0.15 ± 0.05
0.40 ± 0.05
R1
.1
5
Notes
• Tolerance is ± 0.10 mm (0.004") unless otherwise noted.
• Specifications are subject to change without notice.
1.0
2.8
0.5
2.8
Rev. 1.1, 15-Jul-2020
Document Number: 84236
5
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
End of Life July-2021 - Alternative Device: VSMY98545ADS
VSMY98545DS
www.vishay.com
SOLDER PROFILE
Vishay Semiconductors
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 3, acc. to J-STD-020B
DRYING
Fig. 10 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
Rev. 1.1, 15-Jul-2020
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
Document Number: 84236
6
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 01-Jan-2022
1
Document Number: 91000
