SSM3J129TU

SSM3J129TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV) SSM3J129TU ○ Power Management Switch Applications ○ High-Speed Switching Applications • • 1.5 V drive Low ON-resistance Ron = 137mΩ (max) (@VGS = -1.5 V) Ron = Ron = Ron = 88mΩ (max) (@VGS = -1.8 V) 62mΩ (max) (@VGS = -2.5 V) 46mΩ (max) (@VGS = -4.5 V) 2.0±0.1 2.1±0.1 1.7±0.1 0.65±0.05 +0.1 0.3 -0.05 3 0.166±0.05 1:Gate 2:Source 3:Drain Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDSS VGSS ID (Note 1) IDP (Note 1) PD (Note 2) t=10s Tch Tstg Rating -20 ±8 -4.6 -9.2 500 1000 150 −55 to 150 Unit V V A 1 2 Drain power dissipation Channel temperature Storage temperature range mW °C °C UFM JEDEC JEITA TOSHIBA Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 0.7±0.05 ― ― 2-2U1A Weight: 6.6mg (typ.) Note 1: The junction temperature should not exceed 150°C during use. Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) Marking 3 Equivalent Circuit (top view) 3 JJE 1 2 1 2 1 2008-09-30 SSM3J129TU Electrical Characteristics (Ta = 25°C) Characteristic Drain-Source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Symbol Test Conditions Min -20 -12 ⎯ ⎯ -0.3 (Note 3) (Note 3) (Note 3) (Note 3) (Note 3) 6.1 ⎯ ⎯ ⎯ ⎯ ⎯ VDS = -10 V, VGS = 0 V, f = 1 MHz ⎯ ⎯ VDS = −10 V, ID = −4.6 A VGS = −4.5 V VDD = -10 V, ID = -2.0 A, VGS = 0 to -2.5 V, RG = 4.7 Ω ID = 4.6 A, VGS = 0 V (Note 3) ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 12.2 37 48 63 78 640 140 100 8.1 6.4 1.7 32 102 0.85 Max ⎯ ⎯ -10 ±1 -1.0 ⎯ 46 62 88 137 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1.2 ns V nC pF mΩ Unit V μA μA V S V (BR) DSS ID = -1 mA, VGS = 0 V V (BR) DSX ID = -1 mA, VGS = +8 V IDSS IGSS Vth ⏐Yfs⏐ VDS = -20 V, VGS = 0 V VGS = ±8 V, VDS = 0 V VDS = -3 V, ID = -1 mA VDS = -3 V, ID = -3.0 A ID = -3.0 A, VGS = -4.5 V Drain–source ON-resistance RDS (ON) ID = -2.0 A, VGS = -2.5 V ID = -1.0 A, VGS = -1.8 V ID = -0.3 A, VGS = -1.5 V Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Switching time Turn-on time Turn-off time Ciss Coss Crss Qg Qgs Qgd ton toff VDSF Drain-Source forward voltage Note3: Pulse test Switching Time Test Circuit (a) Test Circuit OUT IN −2.5 V RG RL VDD 90% (b) VIN 0V 10% 0 −2.5V 10 μs (c) VOUT VDS (ON) 90% 10% tr ton toff tf VDD = − 10 V RG = 4.7 Ω D.U. ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C VDD Notice on Usage Vth can be expressed as the voltage between gate and source when the low operating current value is ID = -1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2008-09-30 SSM3J129TU ID – VDS -10 -4.5 V -2.5 V -1.8 V -10000 Common Source VDS = -3 V -1000 ID – VGS (A) (mA) ID Drain current -1.5 V -8 ID -100 -6 Drain current -10 Ta = 100 °C −25 °C -4 VGS = -1.2 V -2 Common Source Ta = 25 °C 0 -0.2 -0.4 -0.6 -0.8 -1 -1 25 °C -0.1 0 -0.01 0 -0.5 -1.0 -1.5 -2.0 Drain–source voltage VDS (V) Gate–source voltage VGS (V) RDS (ON) – VGS 180 160 ID = -0.3 A Common Source 180 160 RDS (ON) – VGS ID = -3.0 A Common Source Drain–source ON-resistance RDS (ON) (mΩ) 140 120 100 80 60 40 20 0 0 -2 -4 25 °C Ta = 100 °C Drain–source ON-resistance RDS (ON) (mΩ) 140 120 100 80 60 40 20 25 °C Ta = 100 °C −25 °C -6 -8 −25 °C 0 -2 -4 -6 -8 0 Gate–source voltage VGS (V) Gate–source voltage VGS (V) RDS (ON) – ID 200 Common Source Ta = 25°C 120 Common Source RDS (ON) – Ta ID = -0.3 A / VGS = -1.5 V Drain–source ON-resistance RDS (ON) (mΩ) Drain–source ON-resistance RDS (ON) (mΩ) 100 -1.0 A / -1.8 V -2.0 A / -2.5 V VGS = -1.5 V 100 -1.8 V -2.5 V -4.5 V 0 80 60 40 -3.0 A / -4.5 V 20 0 -2 -4 -6 -8 -10 0 −50 0 50 100 150 Drain current ID (A) Ambient temperature Ta (°C) 3 2008-09-30 SSM3J129TU Vth – Ta Common Source (S) -1.0 |Yfs| – ID 30 10 3 1 0.3 0.1 VDS = -3 V Common Source VDS = -3 V Ta = 25 °C Vth (V) -0.8 ID = -1 mA -0.6 -0.4 -0.2 Forward transfer admittance Gate threshold voltage ⎪Yfs⎪ 0.03 0.01 0 −50 0 50 100 150 1 -10 -100 -1000 -10000 Ambient temperature Ta (°C) Drain current ID (mA) 5000 3000 C – VDS -8 Dynamic Input Characteristic (pF) (V) VGS 1000 500 300 Coss Crss Common Source Ta = 25 °C f = 1 MHz VGS = 0 V -1 -10 -100 Ciss -6 VDD = -10 V C Gate–source voltage Capacitance -4 VDD = -16 V 100 50 30 -2 Common Source ID = -4.6 A Ta = 25 °C 0 0 5 10 15 10 -0.1 Drain–source voltage VDS (V) Total Gate Charge Qg (nC) t – ID 1000 toff Common Source VDD = -10 V VGS = 0 to -2.5 V Ta = 25 °C RG = 4.7 Ω 10 Common Source VGS = 0 V Ta = 25 °C IDR – VDS D IDR (A) IDR (ns) 1 G 0.1 S tf 100 t ton 10 tr Drain reverse current Switching time 0.01 100 °C 0.001 25 °C −25 °C 1 -0.01 -0.1 -1 -10 0.0001 0 0.2 0.4 0.6 0.8 1.0 1.2 Drain current ID (A) Drain–source voltage VDS (V) 4 2008-09-30 SSM3J129TU – tw 1000 c b 100 a rth PD – Ta Drain power dissipation PD (mW) a: Mounted on Ceramic board (25.4mm × 25.4mm × 0.8mm , 2 Cu Pad : 645 mm ) b: Mounted on FR4 Board (25.4mm × 25.4mm × 1.6mm , 2 Cu Pad : 645 mm ) Transient thermal impedance rth (°C/W) 600 800 a 600 b 400 10 1 0.001 0.01 0.1 Single pulse a: Mounted on Ceramic board (25.4mm × 25.4mm × 0.8mm , 2 Cu Pad : 645 mm ) b: Mounted on FR4 Board (25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm2) c: Mounted on FR4 Board (25.4mm × 25.4mm × 1.6mm , 2 Cu Pad : 0.36 mm ×3) 1 10 100 600 200 0 -40 -20 0 20 40 60 80 100 120 140 160 Pulse width tw (s) Ambient temperature Ta (°C) 5 2008-09-30 SSM3J129TU RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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