SSM3K35CT,L3F

SSM3K35CT TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K35CT ○ High-Speed Switching Applications ○ Analog Switch Applications Unit: mm • 1.2-V drive • Low ON-resistance : Ron = 20 Ω (max) (@VGS = 1.2 V) : Ron = 8 Ω (max) (@VGS = 1.5 V) : Ron = 4 Ω (max) (@VGS = 2.5 V) : Ron = 3 Ω (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25˚C) Characteristics Symbol Rating Unit Drain–source voltage VDSS 20 V Gate–source voltage VGSS ±10 V DC ID 180 Pulse IDP 360 PD(Note 1) 100 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C Drain current Drain power dissipation mA JEDEC - JEITA Note: Using continuously under heavy loads (e.g. the application of high CST3 temperature/current/voltage and the significant change in TOSHIBA 2-1J1B temperature, etc.) may cause this product to decrease in the Weight: 0.75 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board 2 (10 mm × 10 mm × 1.0 mm, Cu Pad: 100 mm ) Marking (top view) Polarity mark SD Pin Condition (top view) Equivalent Circuit (top view) Polarity mark (on the top) 3 1 1 3 2 2 1. Gate 2. Source 3. Drain *Electrodes: on the bottom 1 Start of commercial production 2008-02 2014-03-01 SSM3K35CT Electrical Characteristics (Ta = 25°C) Characteristics Symbol Gate leakage current Drain–source breakdown voltage Drain cutoff current Gate threshold voltage Forward transfer admittance Drain–source ON-resistance Unit ⎯ ±10 μA V (BR) DSS ID = 0.1 mA, VGS = 0V 20 ⎯ ⎯ V IDSS VDS = 20 V, VGS = 0V ⎯ ⎯ 1 μA Vth VDS = 3 V, ID = 1 mA 0.4 ⎯ 1.0 V ⏐Yfs⏐ VDS = 3 V, ID = 50 mA (Note 2) 115 ⎯ ⎯ mS ID = 50 mA, VGS = 4 V (Note 2) ⎯ 1.5 3 ID = 50 mA, VGS = 2.5 V (Note 2) ⎯ 2 4 ID = 5 mA, VGS = 1.5 V (Note 2) ⎯ 3 8 ID = 5 mA, VGS = 1.2 V (Note 2) ⎯ 5 20 ⎯ 9.5 ⎯ ⎯ 4.1 ⎯ ⎯ 9.5 ⎯ Reverse transfer capacitance Crss Output capacitance Coss Drain–source forward voltage Max ⎯ Ciss Turn-off time Typ. VGS = ±10 V, VDS = 0V RDS (ON) Turn-on time Min IGSS Input capacitance Switching time Test Condition VDS = 3 V, VGS = 0V, f = 1 MHz ton VDD = 3 V, ID = 50 mA, ⎯ 115 ⎯ toff VGS = 0 to 2.5 V ⎯ 300 ⎯ ⎯ -0.9 -1.2 VDSF ID = - 180 mA, VGS = 0V (Note 2) Ω pF ns V Note 2: Pulse test Switching Time Test Circuit (a) Test Circuit (b) VIN 2.5 V OUT 2.5 V 90% IN 50 Ω 0 10 μs RL VDD 0V (c) VOUT VDD = 3 V Duty ≤ 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C 10% VDD 10% 90% VDS (ON) tr ton tf toff Usage Considerations Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the SSM3K35CT). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 2 2014-03-01 SSM3K35CT ID – VDS ID – VGS 1000 400 10 V 4 V Common Source 2.5 V Common Source (mA) VDS = 3 V 300 200 Drain current Drain current ID 1.8 V ID (mA) Ta = 25°C 1.5 V 100 VGS = 1.2 V 0 0 0.5 1 1.5 Drain–source voltage VDS 100 Ta = 100°C 10 25°C −25°C 1 0.1 0.01 0 2 1 (V) Gate–source voltage RDS (ON) – VGS 3 VGS (V) RDS (ON) – VGS 10 10 Common Source Common Source ID = 5 mA ID = 50 mA Drain–source ON-resistance RDS (ON) (Ω) Drain–source ON-resistance RDS (ON) (Ω) 2 5 25°C Ta = 100°C 5 25°C Ta = 100°C −25°C 0 0 2 4 6 8 Gate–source voltage VGS −25°C 0 0 10 2 (V) 4 Gate–source voltage RDS (ON) – ID 10 Common Source (V) Common Source Drain–source ON-resistance RDS (ON) (Ω) Drain–source ON-resistance RDS (ON) (Ω) VGS 10 RDS (ON) – Ta VGS = 1.2 V 1.5 V 2.5 V 5 VGS = 1.2 V, ID = 5 mA 1.5 V, 5 mA 2.5 V, 50 mA 4V 0 1 8 10 Ta = 25°C 5 6 4 V, 50 mA 10 Drain current 100 ID 0 −50 1000 0 50 Ambient temperature (mA) 3 100 Ta 150 (°C) 2014-03-01 SSM3K35CT ⎪Yfs⎪ – ID ⎪Yfs⎪ Common Source ID = 1 mA VDS = 3 V Vth (V) 1000 500 300 100 Forward transfer admittance Gate threshold voltage (mS) Vth – Ta 1.0 0.5 0 −50 0 50 100 Ambient temperature Ta 150 50 30 10 5 Common Source VDS = 3 V Ta = 25°C 3 1 1 10 Drain current (°C) IDR – VDS 50 (pF) D IDR 25°C S Ta = 100°C 1 C G −25°C 0.1 10 Ciss 5 Coss Common Source VGS = 0 V f = 1 MHz Crss Ta = 25°C 1 0.01 0 −0.5 −1 Drain–source voltage VDS (V) 100 (mW) ton 50 30 10 0.1 10 50 100 VDS (V) Mounted on FR4 board (10 mm × 10 mm × 1.0 mm, Cu Pad: 100 mm2 ) 200 PD Drain Power Dissipation t Switching time 300 5 PD – Ta 250 1000 t f 500 1 Drain – Source voltage Common Source VDD = 3 V VGS = 0 to2.5 V Ta = 25°C 3000 toff 0.5 0.1 −1.5 t – ID 5000 (ns) (mA) C – VDS Capacitance Drain reverse current 10 ID 1000 100 Common Source VGS = 0 V 100 IDR (mA) 1000 100 tr 1 100 10 Drain current ID 1000 (mA) 150 100 50 0 0 20 40 60 80 100 Ambient temperature 4 120 Ta 140 160 (°C) 2014-03-01 SSM3K35CT RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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