TPCA8018-H(TE12LQM

TPCA8018-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H) TPCA8018-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications High-speed switching • Small gate charge: QSW = 9.3 nC (typ.) • High forward transfer admittance: |Yfs| = 76 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V (Note 1) ID 30 Pulsed (Note 1) IDP 90 PD 45 W PD 2.8 W PD 1.6 W EAS 117 mJ IAR 30 A EAR 3.7 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) 0.05 S 1 Rating (Tc=25℃) 0.166±0.05 S Symbol Drain power dissipation A 0.95±0.05 Absolute Maximum Ratings (Ta = 25°C) DC 0.595 5.0±0.2 0.6±0.1 Low drain-source ON-resistance: RDS (ON) = 4.7 mΩ (typ.) Drain current 4 1 • Characteristic 0.15±0.05 A 1.1±0.2 4 3.5±0.2 • 0.05 M A 5 8 5.0±0.2 Small footprint due to a small and thin package 1.27 0.5±0.1 6.0±0.3 • Unit: mm 0.4±0.1 4.25±0.2 8 5 1,2,3:SOURCE 5,6,7,8:DRAIN 0.8±0.1 4:GATE JEDEC ― JEITA ― TOSHIBA 2-5Q1A Weight: 0.069 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2007-12-26 TPCA8018-H Thermal Characteristics Characteristic Thermal resistance, channel to case (Tc=25℃) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Max Unit Rth (ch-c) 2.78 °C/W Rth (ch-a) 44.6 °C/W Rth (ch-a) 78.1 °C/W Marking (Note 5) TPCA 8018-H Type Lot No. ※ Note 1: The channel temperature should not exceed 150°C during use Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 100 μH, RG = 25 Ω, IAR = 30 A Note 4: Repetitive rating: pulse width limited by max. channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2007-12-26 TPCA8018-H Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cutoff current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ VDS = 10 V, ID = 1 mA 1.5 ⎯ 2.5 VGS = 4.5 V, ID = 15 A ⎯ 6.3 8.2 VGS = 10 V, ID = 15 A ⎯ 4.7 6.2 VDS = 10 V, ID = 15 A 38 76 ⎯ ⎯ 2270 2846 ⎯ 135 205 ⎯ 505 ⎯ ⎯ 1.0 1.5 ⎯ 5 ⎯ ⎯ 13 ⎯ Drain-source breakdown voltage Gate threshold voltage Vth Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Gate resistance Rg VDS = 10 V, VGS = 0 V, f = 5 MHz tr Turn-on time ton 4.7 Ω Switching time Fall time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge 1 10 ⎯ VDD ∼ − 15 V < Duty = 1%, tw = 10 μs ⎯ 33 ⎯ VDD ∼ − 24 V, VGS = 10 V, ID = 30A ⎯ 34 ⎯ VDD ∼ − 24 V, VGS = 5 V, ID = 30 A ⎯ 18 ⎯ ⎯ 7.9 ⎯ ⎯ 5.8 ⎯ ⎯ 9.3 ⎯ Qgs1 Gate-drain (“Miller”) charge Qgd Gate switch charge QSW VDD ∼ − 24 V, VGS = 10 V, ID = 30 A V mΩ S pF Ω ns ⎯ tf Turn-off time ID = 15A VOUT VGS 10 V 0V RL = 1.0Ω Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz V nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ 90 A ⎯ ⎯ −1.2 V VDSF IDR = 30 A, VGS = 0 V 3 2007-12-26 TPCA8018-H ID – VDS ID – VDS 20 8 10 4.5 5 6 3.4 (A) 40 10 Common source Ta = 25°C 3.8 Pulse test 4 8 (A) 16 50 3.5 Common source Ta = 25°C Pulse test 4 4.5 5 3.7 6 ID 3.3 Drain current Drain current ID 3.6 12 8 3.2 4 30 3.5 20 3.3 10 VGS = 3.0V VGS = 3.0V 0 0 0.2 0.4 0.6 Drain-source voltage 0.8 VDS 0 0 1 (V) 0.4 0.8 Drain-source voltage ID – VGS VDS (A) Drain-source voltage ID Drain current 24 Ta = −55°C 100 12 0 0 1 2 3 Gate-source voltage 4 VGS 0.3 0.2 ID = 30 A 0.1 0 0 5 (V) 4 6 8 VGS 10 (V) RDS (ON) – ID 10 100 Ta = −55°C 10 25 100 1 1 Drain current 10 ID 4.5 Drain-source ON-resistance RDS (ON) (mΩ) (S) 2 Gate-source voltage Common source VDS = 10 V Pulse test 0.1 0.1 15 7.5 ⎪Yfs⎪ – ID |Yfs| (V) Common source Ta = 25℃ Pulse test (V) Common source VDS = 10 V Pulse test 25 Forward transfer admittance VDS 2 0.4 36 1000 1.6 VDS – VGS 60 48 1.2 VGS = 10 V Common source Ta = 25 ℃ Pulse test 1 0.1 100 (A) 1 Drain current 4 10 ID 100 (A) 2007-12-26 TPCA8018-H RDS (ON) – Ta IDR – VDS 100 (A) Common source Pulse test ID = 7.5A,15A,30A 8 VGS = 4.5 V 10 IDR 12 Drain reverse current Drain-source ON-resistance RDS (ON) (mΩ) 16 ID = 7.5A,15A,30A 4 VGS = 10 V 4.5 3 10 1 VGS = 0 V Common source Ta = 25°C Pulse test 0 −80 −40 0 40 80 Ambient temperature 120 Ta 1 0 160 (°C) −0.2 −0.4 Drain-source voltage Capacitance – VDS VDS (V) 80 120 −1 Vth (V) 3 Ciss Gate threshold voltage 1000 C (pF) −0.8 Vth – Ta 10000 Capacitance −0.6 Coss Crss 100 Common source VGS = 0 V f = 1 MHz Ta = 25°C 10 0.1 1 Drain-source voltage VDS 2 1.5 1 Common source VDS = 10 V 0.5 I = 1 mA D Pulse test 0 −80 100 10 2.5 (V) −40 0 40 Ambient temperature Ta 160 (°C) Dynamic input/output characteristics VGS 16 12 30 VDS VDD = 6 V 20 12 V 8 24 V 10 0 0 4 10 (V) 20 Common source ID = 30 A 40 Ta = 25°C Pulse test 20 Total gate charge 30 Qg Gate-source voltage Drain-source voltage VDS (V) 50 0 40 (nC) 5 2007-12-26 TPCA8018-H rth – tw 1000 Transient thermal impedance (°C/W) rth (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Tc=25℃ 100 (2) (1) 10 (3) 1 0.1 Single - pulse 0.01 0.0001 0.001 0.01 0.1 1 Pulse width tw 10 100 (s) PD – Ta (W) board(a) (Note 2a) (1) 2.5 (2)Device mounted on a glass-epoxy PD board(b) (Note 2b) t=10s 2 Drain power dissipation Drain power dissipation PD – Tc 50 (1)Device mounted on a glass-epoxy PD (W) 3 (2) 1.5 1 0.5 0 0 40 1000 80 120 Ambient temperature Ta 40 30 20 10 0 160 (°C) 0 40 80 Case temperature 120 TC 160 (°C) Safe operating area 100 ID max (Pulse) * t =1ms * Drain current ID (A) 1000 10ms * 10 1 * Single – pulse Ta = 25℃ Curves must be derated linearly with increase in 0.1 temperature. 0.1 1 Drain-source voltage VDSS max 10 VDS 100 (V) 6 2007-12-26 TPCA8018-H RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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