TPCA8003-H(TE12LQM

TPCA8003-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCA8003-H High Efficiency DC/DC Converter Applications Notebook PC Applications Unit: mm 1.27 0.5±0.1 Portable Equipment Applications 0.4±0.1 • High speed switching • Small gate charge: QSW = 8.4 nC (typ.) 5.0±0.2 Small footprint due to a small and thin package 6.0±0.3 • 0.15±0.05 4 1 • High forward transfer admittance: |Yfs| = 60S (typ.) • Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) A 0.166±0.05 0.95±0.05 0.05 S S 1 4 4.25±0.2 Absolute Maximum Ratings (Ta = 25°C) 8 Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V (Note 1) ID 35 Pulsed (Note 1) IDP 105 PD 45 W PD 2.8 W PD 1.6 W EAS 159 mJ IAR 35 A EAR 4.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C DC Drain current Drain power dissipation (Tc=25℃) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) A 1.1±0.2 3.5±0.2 Low drain-source ON-resistance: RDS (ON) = 5.1 mΩ (typ.) 0.595 5.0±0.2 0.6±0.1 • 0.05 M A 5 8 5 0.8±0.1 1,2,3：SOURCE 5,6,7,8：DRAIN 4：GATE JEDEC ― JEITA ― TOSHIBA 2-5Q1A Weight: 0.069 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-16 TPCA8003-H Thermal Characteristics Characteristic Thermal resistance, channel to case (Tc=25℃) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Max Unit Rth (ch-c) 2.78 °C/W Rth (ch-a) 44.6 °C/W Rth (ch-a) 78.1 °C/W Marking (Note 5) TPCA 8003-H Type ※ Lot No. Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 24 V， Tch = 25°C (initial)， L = 0.1 mH， RG = 25 Ω， IAR = 35 A Note 4: Repetitive rating: pulse width limited by max. channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-11-16 TPCA8003-H Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cutoff current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ VDS = 10 V, ID = 1 mA 1.1 ⎯ 2.3 VGS = 4.5 V, ID = 18 A ⎯ 7.3 9.5 VGS = 10 V, ID = 18 A ⎯ 5.1 6.6 VDS = 10 V, ID = 18 A 30 60 ⎯ ⎯ 1465 ⎯ VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 175 ⎯ ⎯ 610 ⎯ ⎯ 4 ⎯ ⎯ 11 ⎯ Drain-source breakdown voltage Gate threshold voltage Vth Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss tr Turn-on time ton 4.7 Ω Switching time Fall time toff 10 ⎯ Duty < = 1%, tw = 10 µs ⎯ 36 ⎯ Total gate charge (gate-source plus gate-drain) Qg VDD ∼ − 24 V, VGS = 10 V, ID = 35 A ⎯ 25 ⎯ Gate-source charge 1 Qgs1 Gate-drain (“Miller”) charge Qgd Gate switch charge QSW VDD ∼ − 15 V VDD ∼ − 24 V, VGS = 5 V, ID = 35 A VDD ∼ − 24 V, VGS = 10 V, ID = 35 A V mΩ S pF ns ⎯ tf Turn-off time ID = 18 A VOUT VGS 10 V 0V RL =0.83Ω Rise time V ⎯ 13 ⎯ ⎯ 5.8 ⎯ ⎯ 5.1 ⎯ ⎯ 8.4 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ 105 A ⎯ ⎯ −1.2 V VDSF IDR = 35 A, VGS = 0 V 3 2006-11-16 TPCA8003-H ID – VDS ID – VDS 10 8 Drain current ID (A) 40 6 5 4.5 4 3.6 3.8 100 Common source Ta = 25°C Pulse test Drain current ID (A) 50 3.4 3.2 30 20 3 10 2.8 10 8 6 5 4.5 Common source Ta = 25°C Pulse test 4 4.1 3.8 80 3.6 60 3.4 40 3.2 3 20 2.8 VGS = 2.6V 0 0 0.2 0.4 0.6 0.8 Drain-source voltage VDS VGS = 2.6V 0 0 1 (V) 1 2 Drain-source voltage VDS (V) Drain current ID (A) 80 60 40 Ta = −55°C 100 25 0 0 1 2 4 3 Gate-source voltage 5 0.32 0.24 ID = 35 A 0.16 18 0.08 9 6 VGS (V) 2 4 Gate-source voltage 6 8 10 VGS (V) RDS (ON) – ID 100 Drain-source ON-resistance RDS (ON) (mΩ) (S) ⎪Yfs⎪ – ID Forward transfer admittance |Yfs| (V) Common source Ta = 25°C Pulse test 0 0 1000 100 Ta = −55°C 100 10 25 1 Common source VDS = 10 V Pulse test 0.1 0.1 5 VDS – VGS 0.4 Common source VDS = 10 V Pulse test 20 4 Drain-source voltage VDS ID – VGS 100 3 1 10 Common source Ta = 25°C Pulse test 10 4.5 VGS = 10 V 1 0.1 100 Drain current ID (A) 1 10 100 Drain current ID (A) 4 2006-11-16 TPCA8003-H RDS (ON) – Ta IDR – VDS 20 1000 Common source Common source Ta = 25°C (A) 16 Pulse test Drain reverse current IDR Drain-source ON-resistance RDS (ON) (mΩ) Pulse test ID = 35A 18 12 9 8 VGS = 4.5 V ID = 35A,18A,9A 4 VGS = 10 V 0 −80 −40 0 40 80 Ambient temperature 120 Ta 100 10 3 10 1 1 VGS = 0 V 0.1 0 160 4.5 (°C) −0.4 −0.2 Capacitance – VDS −1.0 (V) Vth – Ta 2.5 (V) Ciss Gate threshold voltage Vth (pF) Capacitance C −0.8 Drain-source voltage VDS 10000 1000 Coss 100 −0.6 Common source Crss VGS = 0 V f = 1 MHz Ta = 25°C 10 0.1 1 10 1.5 1 Common source 0.5 (V) VDS = 10 V ID = 1 mA Pulse test 0 −80 100 Drain-source voltage VDS 2 −40 0 40 Ambient temperature 80 Ta 120 160 (°C) Dynamic input/output characteristics 50 20 16 VDD = 6 V Pulse test 12 30 12 VDS 24 20 VGS 10 0 0 8 8 16 4 24 Total gate charge Qg 32 (V) ID = 35 A 40 Ta = 25°C Gate-source voltage VGS Drain-source voltage VDS (V) Common source 0 40 (nC) 5 2006-11-16 TPCA8003-H (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) (2) Device mounted on a glass-epoxy board (b) 100 (Note 2b) (1) (3) Tc=25℃ Transient thermal impedance rth (°C/W) rth – tw 1000 10 (3) 1 Single - pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 100 PD – Ta 3 PD – Tc (Note 2a) (W) (1) (2)Device mounted on a glass-epoxy board(b) (Note 2b) Drain power dissipation PD (W) Drain power dissipation PD 2 50 (1)Device mounted on a glass-epoxy board(a) 2.5 ｔ＝10s (2) 1.5 1 0.5 0 0 40 1000 tw (s) 80 120 Ambient temperature Ta 40 30 20 10 0 160 (°C) 0 40 80 Case temperature 120 TC 160 (°C) Safe operating area Drain current ID (A) 1000 ID max (Pulse) * 100 t=1ms * 10ms * ID max (Continuous) 10 DC Operation Tc = 25℃ * Single - pulse 1 Ta = 25℃ Curves must be derated linearly with increase in VDSS max temperature. 0.1 0.1 1 10 Drain-source voltage VDS 100 (V) 6 2006-11-16 TPCA8003-H 7 2006-11-16