SIZ790DT-T1-GE3

New Product SiZ790DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 30 RDS(on) (Ω) 0.0093 at VGS = 10 V 0.0130 at VGS = 4.5 V 0.0047 at VGS = 10 V 0.0059 at VGS = 4.5 V ID (A) 16a 16a 35a 35a Qg (Typ.) 7.7 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • SkyFET® Monolithic TrenchFET® Power MOSFETs and Schottky Diode • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC Channel-2 30 17 nC APPLICATIONS PowerPAIR® 6 x 3.7 Pin 1 G1 1 2 D1 G2 6 S2 5 S2 4 S1/D2 6.00 mm 6 3 VSW GND D1 3.73 mm D1 1 2 VIN GLS GND 5 3 GHS VIN VIN VIN/D1 • System Power - Notebook - Server • POL • Synchronous Buck Converter GHS/ G1 N-Channel 1 MOSFET GLS/ G2 N-Channel 2 MOSFET GND/S2 VSW/ S1/D2 Schottky Diode 4 Ordering Information: SiZ790DT-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Channel-1 30 ± 20 16 16a 12.9b, c 10.3b, c 70 16a 3.2 16 13 27 17 b, c a Channel-2 Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) Continuous Source Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy 35 35a 23.4b, c 18.7b, c 100 35a 3.8b, c 30 45 48 31 4.6b, c 3b, c - 55 to 150 260 a A mJ Maximum Power Dissipation 3.9b, c 2.5b, c W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS Channel-1 Parameter b, f Channel-2 Typ. 20 2 Max. 27 2.6 Unit Maximum Junction-to-Ambient °C/W Maximum Junction-to-Case (Drain) Steady State Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 67 °C/W for channel-1 and 65 °C/W for channel-2. Document Number: 67669 S11-0607-Rev. A, 04-Apr-11 www.vishay.com 1 t ≤ 10 s Symbol RthJA RthJC Typ. 24 3.5 Max. 32 4.6 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ790DT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Source Leakage VDS VGS(th) IGSS VGS = 0 V, ID = 250 µA VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C VDS = 30 V, VGS = 0 V, TJ = 55 °C On-State Drain Currentb ID(on) VDS ≥ 5 V, VGS = 10 V VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 15 A Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 13 A VGS = 4.5 V, ID = 20 A Forward Transconductanceb Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss Channel-2 VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 15 A Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 20 A Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 15 A Gate-Source Charge Gate-Drain Charge Gate Resistance Qgs Qgd Rg Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 20 A f = 1 MHz Ch-1 Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 0.2 0.2 830 1980 185 455 80 165 15.6 36 7.7 17 2.6 5.7 3 5 1 0.9 2 1.8 Ω 24 54 12 26 nC pF gfs VDS = 15 V, ID = 15 A VDS = 15 V, ID = 20 A Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 15 20 0.0075 0.0093 0.0038 0.0047 0.0105 0.0130 0.0048 0.0059 48 85 S Ω 140 50 30 30 1 1.1 2.2 2.2 ± 100 ± 100 1 200 5 1400 A µA nA V Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 67669 S11-0607-Rev. A, 04-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ790DT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb Channel-1 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C Channel-2 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C IS = 10 A, VGS = 0 V IS = 2 A, VGS = 0 V TC = 25 °C Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 0.8 0.38 15 20 6 15 9 10.5 6 9.5 ns 16 35 70 100 1.2 0.48 30 40 12 32 V ns nC A td(on) tr td(off) tf td(on) tr td(off) tf Ch-1 Channel-1 VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω Channel-2 VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Channel-1 VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω Channel-2 VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 10 20 15 15 15 25 7 10 5 10 15 10 17 25 7 10 20 40 30 30 30 50 15 20 10 20 30 20 35 50 15 20 ns Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 67669 S11-0607-Rev. A, 04-Apr-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ790DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 70 60 50 40 30 20 10 0 0.0 0 0.5 1.0 1.5 2.0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) TC = - 55 °C 2.5 3.0 VGS = 10 V thru 4 V 16 ID - Drain Current (A) ID - Drain Current (A) 20 12 TC = 25 °C 8 VGS = 3 V 4 TC = 125 °C VGS - Gate-to-Source Voltage (V) Output Characteristics 0.014 1200 Transfer Characteristics RDS(on) - On-Resistance (Ω) 0.012 C - Capacitance (pF) VGS = 4.5 V VGS = 10 V 0.008 1000 Ciss 800 0.010 600 400 Coss Crss 0.006 200 0.004 0 10 20 30 40 50 60 70 0 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 ID = 15.2 A VGS - Gate-to-Source Voltage (V) 8 VDS = 7.5 V RDS(on) - On-Resistance (Normalized) 1.8 ID = 15 A 1.6 Capacitance VGS = 10 V 1.4 VGS = 4.5 V 6 VDS = 15 V 4 VDS = 24 V 1.2 1.0 2 0.8 0 0 3 6 9 12 15 18 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature www.vishay.com 4 Document Number: 67669 S11-0607-Rev. A, 04-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ790DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.030 ID = 15 A TJ = 150 °C 10 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.025 0.020 0.015 TJ = 125 °C 1 TJ = 25 °C 0.010 TJ = 25 °C 0.005 0.1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 2.0 50 On-Resistance vs. Gate-to-Source Voltage 1.8 40 1.6 Power (W) ID = 250 μA VGS(th) (V) 30 1.4 20 1.2 1.0 10 0.8 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (s) 10 100 1000 TJ - Temperature (°C) Threshold Voltage 1000 Single Pulse Power 100 ID - Drain Current (A) Limited by RDS(on)* 10 100 μs 1 ms 1 10 ms 100 ms 1s 10 s DC BVDSS Limited 0.1 TA = 25 °C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 67669 S11-0607-Rev. A, 04-Apr-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ790DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 50 30 40 ID - Drain Current (A) 25 20 Power (W) Package Limited 5 30 15 20 10 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* Power, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 67669 S11-0607-Rev. A, 04-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ790DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 67 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 4. Surface Mounted 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 Square Wave Pulse Duration (s) 0.01 0.1 Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 67669 S11-0607-Rev. A, 04-Apr-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ790DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 VGS = 10 V thru 4 V 80 ID - Drain Current (A) ID - Drain Current (A) 16 20 60 VGS = 3 V 12 TC = 25 °C 8 TC = 125 °C TC = - 55 °C 40 20 4 0 0.0 0.5 1.0 1.5 2.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics 0.0060 2500 Transfer Characteristics 0.0055 RDS(on) - On-Resistance (Ω) C - Capacitance (pF) Ciss 2000 VGS = 4.5 V 0.0050 1500 0.0045 VGS = 10 V 1000 Coss 500 Crss 0 0.0040 0.0035 0.0030 0 20 40 60 80 100 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 ID = 20 A VGS - Gate-to-Source Voltage (V) 8 RDS(on) - On-Resistance (Normalized) VDS = 7.5 V 1.6 1.8 ID = 20 A Capacitance VGS = 10 V 1.4 VGS = 4.5 V 1.2 6 VDS = 15 V 4 VDS = 24 V 1.0 2 0.8 0 0 10 20 30 40 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature www.vishay.com 8 Document Number: 67669 S11-0607-Rev. A, 04-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ790DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 TJ = 150 °C RDS(on) - On-Resistance (Ω) 0.008 TJ = 125 °C 0.010 ID = 20 A IS - Source Current (A) 10 TJ = 25 °C 0.006 0.004 TJ = 25 °C 0.002 1 0.1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 1.E-01 1.E-02 IR - Reverse Current (A) 1.E-03 1.E-04 1.E-05 1.E-06 1.E-07 1.E-08 - 50 VR = 10 V 10 50 On-Resistance vs. Gate-to-Source VR = 30 V VR = 20 V Power (W) - 25 0 25 50 75 100 125 150 40 30 20 0 0.01 0.1 1 Time (s) 10 100 1000 TJ - Temperature (°C) Reverse Current vs. Junction Temperature 1000 Limited by RDS(on)* 100 μs 10 1 ms 10 ms 1 100 ms 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.01 0.1 1 10 100 1s 10 s DC Single Pulse Power 100 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 67669 S11-0607-Rev. A, 04-Apr-11 www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ790DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 50 80 ID - Drain Current (A) 40 40 Package Limited Power (W) 60 30 20 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* Power, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 67669 S11-0607-Rev. A, 04-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ790DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 65 °C/W 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 Square Wave Pulse Duration (s) 0.01 0.1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67669. Document Number: 67669 S11-0607-Rev. A, 04-Apr-11 www.vishay.com 11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix PowerPAIRTM 6 x 3.7 CASE OUTLINE D Pin 6 Pin 5 Pin 4 L A K2 Pin 4 Pin 5 K2 Pin 6 0.10 C 2X D1 E1 E Pin #1 Ident (Optional) E2 Pin 1 b BACK SIDE VIEW D1 Pin 1 Pin 2 Pin 3 0.10 C 2X K1 Pin 3 e Pin 2 b1 0.10 C A A1 C Z c 0.08 C Z MILLIMETERS DIM. A A1 b b1 C D D1 E E1 E2 e K K1 K2 L 0.38 ECN: S-82772-Rev. B, 17-Nov-08 DWG: 5979 MIN. 0.70 0.00 0.46 0.20 0.18 3.65 2.41 5.92 2.62 0.87 NOM. 0.75 0.51 0.25 0.20 3.73 2.53 6.00 2.67 0.92 1.27 BSC 0.45 TYP. 0.66 TYP. 0.60 TYP. 0.43 0.48 0.015 MAX. 0.80 0.05 0.56 0.38 0.23 3.81 2.65 6.08 2.72 0.97 MIN. 0.028 0.000 0.018 0.008 0.007 0.144 0.095 0.233 0.103 0.034 INCHES NOM. 0.030 0.020 0.010 0.008 0.147 0.100 0.236 0.105 0.036 0.05 BSC 0.018 TYP. 0.026 TYP. 0.024 TYP. 0.017 0.019 MAX. 0.032 0.002 0.022 0.015 0.009 0.150 0.104 0.239 0.107 0.038 Document Number: 69028 17-Nov-08 K www.vishay.com 1 PAD Pattern Vishay Siliconix RECOMMENDED PAD FOR PowerPAIR™ 6 x 3.7 0.3520 (8.941) 0.0220 (0.559) 0.0190 (0.483) 0, 0.11 0.0170 (0.432) 0.1040 (2.642) 0.1070 (2.718) 0, 0.03 0, 0 0.0220 (0.559) 0.4390 (11.151) 0, - 0.0645 0.0170 (0.432) 0.0380 (0.965) - 0.05, - 0.11 0, - 0.11 0.0500 (1.27) 1 Recommended PAD for PowerPAIR 6 x 3.7 Dimensions in inches (mm) Keep-out 0.3520 (8.94) x 0.4390 (11.151) Document Number: 65278 Revision: 04-Aug-09 www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1