VBUS054CV-06S-G-08

VBUS054CV-06S Vishay Semiconductors 4-Line BUS-Port ESD-Protection Features • • • • • Ultra compact SOT-23-6L package 4-line USB ESD-protection Low leakage current Low load capacitance CD = 1.2 pF ESD-protection acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge • High surge current acc. IEC61000-4-5 IPP > 11 A • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 6 5 4 1 22037 2 3 22036 Marking (example only) XX YYY YYY = Type code (see table below) XX = Date code 22035 Ordering Information Device name VBUS054CV-06S Ordering code VBUS054CV-06S-G-08 Taped units per reel (8 mm tape on 7" reel) 3000 Minimum order quantity 15 000 Package Data Device name VBUS054CV-06S Package name SOT-23-6L Marking code 4CV Weight 15.2 mg Molding compound flammability rating UL 94 V-0 Moisture sensitivity level MSL level 1 (according J-STD-020) Soldering conditions 260 °C/10 s at terminals Absolute Maximum Ratings Parameter Test conditions Pin 1, 3, 4 or 6 to pin 2 acc. IEC 61000-4-5; tP = 8/20 µs; single shot Pin 5 to pin 2 acc. IEC 61000-4-5; tP = 8/20 µs; single shot Pin 1, 3, 4 or 6 to pin 2 acc. IEC 61000-4-5; tP = 8/20 µs; single shot Pin 5 to pin 2 acc. IEC 61000-4-5; tP = 8/20 µs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Symbol IPPM IPPM PPP PPP VESD VESD TJ Value 11 13 242 246 ± 30 ± 30 - 40 to + 85 Unit A A W W kV kV °C Peak pulse current Peak pulse power ESD immunity Operating temperature ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number 83299 Rev. 1.1, 28-May-10 XX For technical support, please contact: ESDprotection@vishay.com www.vishay.com 1 VBUS054CV-06S Vishay Semiconductors Electrical Characteristics Ratings at 25 °C, ambient temperature unless otherwise specified VBUS054CV-06S Date line: pin 1 , 3, 4 or 6 to pin 2 Parameter Protection paths Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Forward clamping voltage Data line capacitance Line Symmetry Test conditions/remarks Number of line which can be protected at IR = 0.1 µA at VIN = VRWM = 5.5 V at IR = 1 mA at IPP = 11 A; acc. IEC 61000-4-5 at IF = 11 A; acc. IEC 61000-4-5 VR (at I/O pin) = 0 V; VR (at pin 5) = 5 V; f = 1 MHz Difference of the line capacitances Symbol Nlines VRWM IR VBR VC VF CD dCD 7 5.5 0.01 7.9 18 5 1.2 0.1 8.6 22 6.5 2.5 0.2 Min. Typ. Max. 4 Unit lines V µA V V V pF pF VBUS054CV-06S VBUS-line: pin 5 to pin 2 Parameter Reverse working voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Forward clamping voltage Line capacitance Test conditions/remarks at IR = 0.1 µA at VIN = VRWM = 5.5 V at IR = 1 mA at IPP = 13 A; acc. IEC 61000-4-5 at IF = 13 A; acc. IEC 61000-4-5 VR (at pin 5) = 0 V; f = 1 MHz Symbol VRWM IR VBR VC VF CD 190 6.3 Min. 5.5 Typ. 6.6 0.01 7.1 18 0.1 8 22 7 Max. Unit V µA V V V pF Application Note With the VBUS054CV-06S a double, high speed USB-port can be protected against transient voltage signals. Negative transients will be clamped close below the ground level while positive transients will be clamped close above the 5 V working range. An avalanche diode clamps the supply line (VBUS at pin 5) to ground (pin 2). The high speed data lines, D1+, D2+, D1- and D2- , are connected to pin 1, 3, 4 and 6. As long as the signal voltage on the data lines is between the ground- and the VBUS -level, the low capacitance PN-diodes offer a very high isolation to VBUS , ground and to the other data lines. But as soon as any transient signal exceeds this working range, one of the PN-diodes gets in the forward mode and clamps the transient to ground or the avalanche break through voltage level. www.vishay.com 2 For technical support, please contact: ESDprotection@vishay.com Document Number 83299 Rev. 1.1, 28-May-10 VBUS054CV-06S Vishay Semiconductors t w i n U S B P o r t R E C E I V E R IC VBUS D1+ D16 5 4 1 2 3 D2+ D2GND 22078 Typical Characteristics (Tamb = 25 °C, unless otherwise specified) 120 % Rise time = 0.7 ns to 1 ns 2.5 f = 1 MHz 2.0 Discharge Current IESD 100 % 80 % CD (pF) 1.5 Pin 1, 3, 4 or 6 to Pin 2 1.0 60 % 53 % 40 % 27 % 20 % 0% - 10 0 10 20 30 40 50 60 70 80 90 100 20557 0.5 0 0 22026 1 2 3 4 5 6 Time (ns) VR (V) Figure 1. ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 Ω/150 pF) Figure 3. Typical Capacitance CD vs. Reverse Voltage VR 200 100 % 80 % 8 µs to 100 % 180 160 140 f = 1 MHz Pin 5 to Pin 2 CD (pF) 40 120 100 80 60 IPPM 60 % 20 µs to 50 % 40 % 20 % 0% 0 10 20 30 40 20 0 0 22027 1 2 3 4 5 6 20548 Time (µs) V R ( V) Figure 2. 8/20 µs Peak Pulse Current Wave Form acc. IEC 61000-4-5 Figure 4. Typical Capacitance CD vs. Reverse Voltage VR Document Number 83299 Rev. 1.1, 28-May-10 For technical support, please contact: ESDprotection@vishay.com www.vishay.com 3 VBUS054CV-06S Vishay Semiconductors 100 120 100 acc. IEC 61000-4-2 + 8 kV contact discharge 10 Pin 5 to Pin 2 80 VC-ESD (V) IF (mA) 1 60 Pin 1, 3, 4 or 6 to Pin 2 40 20 0 - 20 0.1 Pin 1, 3, 4 or 6 to Pin 2 0.01 0.001 0.5 22028 0.6 0.7 0.8 0.9 1 - 40 - 10 0 10 20 30 40 50 60 70 80 90 22031 VF (V) t (ns) Figure 5. Typical Forward Current IF vs. Forward Voltage VF Figure 8. Typical Clamping Performance at + 8 kV Contact Discharge (acc. IEC 61000-4-2) 9 8 7 Pin 1, 3, 4 or 6 to Pin 2 50 acc. IEC 61000-4-2 - 8 kV contact discharge 0 Pin 5 to Pin 2 VC-ESD (V) 6 - 50 Pin 1, 3, 4 or 6 to Pin 2 - 100 VR (V) 5 4 3 2 1 0 0.01 0.1 1 10 100 1000 10 000 - 150 - 200 - 10 0 10 20 30 40 50 60 70 80 90 22032 22029 IR (µA) t (ns) Figure 6. Typical Reverse Voltage VR vs. Reverse Current IR 25 Figure 9. Typical Clamping performance at - 8 kV Contact Discharge (acc. IEC 61000-4-2) 400 300 Pin 1, 3, 4 or 6 to Pin 2 20 Pin 1, 3, 4 or 6 to Pin 2 200 100 VC-ESD (V) VC (V) 15 Pin 5 to Pin 2 0 - 100 - 200 - 300 - 400 VC-ESD 10 5 VC Measured acc. IEC 61000-4-5 (8/20µs - wave form) acc. IEC 61000-4-2 contact discharge - 500 0 22033 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 22030 5 10 15 20 25 30 IPP (A) VESD (kV) Figure 7. Typical Peak Clamping Voltage VC vs. Peak Pulse Current IPP Figure 10. Typical Peak Clamping Voltage at ESD Contact Discharge (acc. IEC 61000-4-2) www.vishay.com 4 For technical support, please contact: ESDprotection@vishay.com Document Number 83299 Rev. 1.1, 28-May-10 VBUS054CV-06S Vishay Semiconductors Package Dimensions in millimeters (inches): SOT-23-6L 0.550 ref (0.022 ref) 1.15 (0.045) 3.00 (0.118) 2.60 (0.102) 0.45 (0.018) 1.70 (0.067) 1.50 (0.059) 0.40 (0.015) foot print recommendation: 0.5 (0.020) 0.9 (0.035) 0.95 (0.037) 0.9 (0.035) 3.0 (0.118) 2.8 (0.110) 1.1 (0.043) max. 0.19 (0.007) 0.11 (0.004) 0.2 (0.008) 0.45 (0.018) 0.40 (0.015) 0.45 (0.018) 0.40 (0.015) 0.5 (0.020) 0.3 (0.012) 0.97 (0.038) 0.93 (0.037) 0.97 (0.038) 0.93 (0.037) 0.95 (0.037) Document no.: S8-3929.01-002 (4) Rev. 1 - Date: 15.Jan.2010 22034 Orientation in Blistertape Unreeling direction 6 Pin 1 location 5 4 1 2 3 Top view S8-V-3929.01-003 (4) Date: 23. 11. 2009 22007 Document Number 83299 Rev. 1.1, 28-May-10 2.4 (0.094) For technical support, please contact: ESDprotection@vishay.com www.vishay.com 5 0° t o 8° Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1