VBUS054DD-HF4
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Vishay Semiconductors
4-Line BUS-Port ESD Protection
FEATURES
4
3
• Ultra compact LLP1010-5L package
5
• Low package profile < 0.4 mm
• 4-line ESD protection
1
2
• Low leakage current
21483
• Low load capacitance CD = 0.8 pF
• ESD immunity acc. IEC 61000-4-2
± 15 kV contact discharge
± 15 kV air discharge
21482
MARKING (example only)
• Pin plating NiPdAu (e4) no whisker growth
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
XY
20932
Dot = pin 1 marking
X = date code
Y = type code (see table below)
DESIGN SUPPORT TOOLS
click logo to get started
Models
Available
ORDERING INFORMATION
DEVICE NAME
VBUS054DD-HF4
ORDERING CODE
TAPED UNITS PER REEL
(8 mm TAPE ON 7" REEL)
MINIMUM ORDER QUANTITY
VBUS054DD-HF4-GS08
5000
5000
PACKAGE DATA
DEVICE NAME
PACKAGE
NAME
VBUS054DD-HF4
LLP1010-5L
TYPE
WEIGHT
CODE
C
1.07 mg
MOLDING COMPOUND
FLAMMABILITY RATING
UL 94 V-0
MOISTURE
SENSITIVITY LEVEL
SOLDERING CONDITIONS
MSL level 1
Peak temperature max. 260 °C
(according J-STD-020)
ABSOLUTE MAXIMUM RATINGS VBUS054DD-HF4
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Peak pulse current
Pin 1, 2, 3 or 4 to pin 5
acc. IEC 61000-4-5; tp = 8/20 µs; single shot
IPPM
3
A
Peak pulse power
Pin 1, 2, 3 or 4 to pin 5
acc. IEC 61000-4-5; tp = 8/20 µs; single shot
PPP
57
W
± 15
kV
± 15
kV
TJ
-40 to +125
°C
TSTG
-55 to +150
°C
ESD immunity
Operating temperature
Storage temperature
Rev. 1.8, 04-Jan-2019
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
VESD
Document Number: 81928
1
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBUS054DD-HF4
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS VBUS054DD-HF4 (Pin 1, 2, 3, or 4 to pin 5)
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Number of lines which can be protected
Nchannel
-
-
4
lines
Max. reverse working voltage
VRWM
-
-
5
V
Reverse voltage
at IR = 0.1 μA
VR
5
-
-
V
Reverse current
at VIN = VRWM = 5 V
IR
-
< 0.01
0.1
μA
at IR = 1 mA
VBR
6.9
8
8.7
V
Reverse clamping voltage
at IPP = 3 A acc. IEC 61000-4-5
VC
-
16
19
V
Forward clamping voltage
at IF = 12 A acc. IEC 61000-4-5
VF
-
3.5
4.5
V
VIN = 0 V
CD
-
0.8
1
pF
VIN = 2.5 V
CD
-
0.5
0.8
pF
Difference of the line capacitances
dCD
-
-
0.05
pF
Protection paths
Reverse stand-off voltage
Reverse breakdown voltage
Capacitance
Line symmetry
Note
• Tamb = 25 °C, unless otherwise specified
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1.0
8 µs to 100 %
100 %
0.9
other pins at 0 V
0.8
80 %
0.7
CD (pF)
IPPM
60 %
20 µs to 50 %
40 %
other pins at 3 V
0.6
0.5
other pins at 5 V
0.4
0.3
20 %
0.2
f = 1 MHz; pin 5 connected to ground
0.1
0%
0
20548
10
20
30
0
40
Time (µs)
Fig. 1 - 8/20 μs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
0
21503
2
3
4
5
Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR
100
120 %
Pin 5 to pin 1, 2, 3, or 4
Rise time = 0.7 ns to 1 ns
100 %
10
80 %
1
IF (mA)
Discharge Current IESD
1
VR at pin 1, 2, 3 or 4 (V)
60 %
53 %
0.1
40 %
27 %
0.01
20 %
0%
-10 0 10 20 30 40 50 60 70 80 90 100
20557
Time (ns)
Fig. 2 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 /150 pF)
Rev. 1.8, 04-Jan-2019
0.001
0.5
21504
0.6
0.7
0.8
0.9
1.0
1.1
VF (V)
Fig. 4 - Typical Forward Current IF vs. Forward Voltage VF
Document Number: 81928
2
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBUS054DD-HF4
www.vishay.com
Vishay Semiconductors
9
25
Measured acc. IEC 61000-4-5
(8/20µs - wave form)
8
20
7
Pin 1, 2, 3, or 4 to pin 5
Pin 1, 2, 3, or 4 to pin
VC (V)
VR (V)
6
5
4
15
VC
10
3
2
5
Pin 5 to pin 1, 2, 3, or 4
1
0
0.01
0
0.1
21505
1
101
102
103
104
0
1
21506
IR (µA)
Fig. 5 - Typical Reverse Voltage VR vs. Reverse Current IR
2
3
4
5
IPP (A)
Fig. 6 - Typical Peak Clamping Voltage VC vs.
Peak Pulse Current IPP
APPLICATION NOTE
With the VBUS054DD-HF4 a double, high speed USB-port or up to 4 other high speed signal or data lines can be protected
against transient voltage signals. Negative transients will be clamped close below the ground level while positive transients will
be clamped close above the 5 V working range. The high speed data lines, D1+, D2+, D1- and D2-, are connected to pin 1, 2, 3,
and 4, pin 5 is connected to ground. As long as the signal voltage on the data lines is between the ground- and the
breakthrough-level, the low input capacitance of each channel offer a very high isolation to ground and to the other data lines.
But as soon as any transient signal exceeds this working range, the VBUS054DD-HF4 clamps the transient to ground or to the
avalanche breakthrough voltage level.
t
w
i
n
D1+
D14
U
S
B
P
o
r
t
3
5
1
D2+
R
E
C
E
I
V
E
R
2
IC
D2GND
21507
Rev. 1.8, 04-Jan-2019
Document Number: 81928
3
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBUS054DD-HF4
www.vishay.com
Vishay Semiconductors
BACKGROUND KNOWLEDGE
A zener- or avalanche diode is an ideal device for “cutting” or “clamping” voltage spikes or voltage transients down to low and
uncritical voltage values. The breakthrough voltage can easily be adjusted by the chip-technology to any desired value within a
wide range. Up to about 6 V the “zener-effect” (tunnel-effect) is responsible for the breakthrough characteristic. Above 6 V the
so-called “avalanche-effect”" is responsible. This is a more abrupt breakthrough phenomenon. Because of the typical
“Z-shape” of the current-voltage-curve of such diodes, these diodes are generally called “Z-diode” (= zener or avalanche
diodes). An equally important parameter for a protection diode is the ESD- and surge-power that allows the diode to short
current in the pulse to ground without being destroyed.
This requirement can be adjusted by the size of the silicon chip (crystal). The bigger the active area the higher the current that
the diode can short to ground.
But the active area is also responsible for the diode capacitance - the bigger the area the higher the capacitance.
The dilemma is that a lot of applications require an effective protection against more then 8 kV ESD while the capacitance must
be lower then 5 pF! This is well out of the normal range of a Z-diode. However, a protection diode with a low capacitance
PN-diode (switching diode or junction diode) in series with a Z-diode, can fulfil both requirements simultaneously: low
capacitance AND high ESD- and/or surge immunity become possible!
A small signal (Vpp < 100 mV) just sees the low capacitance of the PN-diode, while the big capacitance of the Z-diode in series
remains "invisible".
CD = 0.4 pF
D
CTOT
ZD
CZD = 110 pF
20400
Such a constellation with a Z-diode and a small PN-diode
(with low capacitance) in series (anti-serial) is a real
unidirectional protection device. The clamping current can
only flow in one direction (forward) in the PN-diode. The
reverse path is blocked.
I/O
D
ZD
Gnd
20401
Another PN-diode "opens" the back path so that the
protection device becomes bidirectional! Because the
clamping voltage levels in forward and reverse directions
are different, such a protection device has a Bidirectional
and Asymmetrical clamping behaviour (BiAs) just like a
single Z-diode.
The VBUS054DD-HF4 offers four inputs with such
protection circuit inside.
I/O
D1
D2
ZD
Gnd
20404
4
3
5
1
Rev. 1.8, 04-Jan-2019
2
21508
Document Number: 81928
4
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBUS054DD-HF4
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): LLP1010-5L
0.125 (0.005) ref.
0 (0.000)
0.95 (0.037)
1.05 (0.041)
Pin 1 marking
0.03 (0.001)
0.4 (0.016)
0.15 (0.006)
0.22 (0.009)
0.25 (0.010)
0.33 (0.013)
0.28 (0.011)
0.5 (0.020) Bsc
0.65 (0.026) exp. DAP
0.2 (0.008) exp. DAP
1.05 (0.041)
0.95 (0.037)
Foot print recommendation:
0.15 (0.006)
Document no.:S8-V-3906.04-007 (4)
Created - Date: 15. April. 2008
Rev. 3 - Date: 11. May. 2016
Solder
resist mask
0.65 (0.026)
0.5 (0.020)
0.25 (0.010)
0.2 (0.008)
Solder pad
0.35 (0.014)
0.2 (0.008)
21380
Rev. 1.8, 04-Jan-2019
Document Number: 81928
5
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
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Revision: 01-Jan-2023
1
Document Number: 91000