CGHV35060MP

CGHV35060MP 60 W, 2700-3800 MHz, 50 V GaN HEMT for S Band Radar and LTE Base Stations Description CGHV35060MP is a 60 W input matched, gallium nitride (GaN) high electron mobility transistor (HEMT) optimized for S Band performance. The CGHV35060MP is suitable for typical bands of 2.7-3.1 GHz and 3.1-3.5 GHz while the input matched transistor provides optimal gain, power and efficiency in a small 6.5 mm x 4.4 mm plastic surface mount (SMT) package. The typical performance plots in the datasheet are derived with CGHV35060MP matched into a 3.1-3.5 GHz high power amplifier. PN: CGHV35060MP Typical Performance Over 3.1 - 3.5 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 3.1 GHz 3.3 GHz 3.5 GHz Units Gain 14.5 14.3 13.8 dB Output Power 88 88 75 W Drain Efficiency 61 67 64 % Note: Measured in the CGHV35060MP-AMP1 amplifier circuit, under 100 μs pulse width, 10% duty cycle, PIN = 35 dBm Features • • • • • Reference design amplifier 3.1 - 3.5 GHz 75W Typical output power 14.5 dB power gain 67% Drain efficiency Internally pre-matched on input, unmatched output Large Signal Models Available for ADS and MWO Rev 2.3 - July 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV35060MP 2 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage VDSS 150 Volts 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 10.4 mA 25˚C Maximum Drain Current1 IDMAX 6.3 A 25˚C Soldering Temperature2 TS 245 ˚C CW Thermal Resistance, Junction to Case3 RθJC 2.6 ˚C/W 85˚C, PDISS = 52 W Pulsed Thermal Resistance, Junction to Case RθJC 1.95 ˚C/W 85˚C, PDISS = 62 W, 100 μsec 10% Case Operating Temperature4 TC -40, +107 ˚C CW Notes: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at wolfspeed.com/rf/document-library 3 Measured for the CGHV35060MP 4 See also, the Power Dissipation De-rating Curve on Page 4 Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 10.4 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 50 V, ID = 125 mA Saturated Drain Current2 IDS 8.4 10.4 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 125 – – VDC VGS = -8 V, ID = 10.4 mA DC Characteristics 1 RF Characteristics (TC = 25˚C, F0 = 3.225 GHz unless otherwise noted) 4 Saturated Output Power3,6 PSAT 55 75 – W VDD = 50 V, IDQ = 125 mA, PIN = 34.5 dBm Pulsed Drain Efficiency η 46 59.1 – % VDD = 50 V, IDQ = 125 mA, PIN = 34.5 dBm Gain3,6 G 14.35 16.3 – dB VDD = 50 V, IDQ = 125 mA, PIN = 10 dBm Output Mismatch Stress3 VSWR – – 10:1 Y No damage at all phase angles, VDD = 50 V, IDQ = 125 mA, POUT = 60 W Pulsed CGS – 32.16 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 4.4 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.5 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz 3,6 Dynamic Characteristics Input Capacitance5 5 Notes: 1 Measured on wafer prior to packaging 2 Scaled from PCM data 3 Pulse Width = 100 μs, Duty Cycle = 10% 4 Measured in CGHV35060MP high volume test fixture 5 Includes package 6 Includes offsets correlating data taken in high volume test fixture to data taken in application circuit with device soldered down Rev 2.3 - July 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV35060MP 3 Typical Performance Figure 1. Small Signal Gain and Return Losses vs Frequency Measured in Demonstration Amplifier Circuit CGHV35060MP-AMP1 CGHV35060MP 35dBm pin, 10% 100us, Vd 50V, Id 125mA 20 10 Gain and Return Loss (dB) Gain and Return Loss (dB) 15 5 0 -5 -10 S21 -15 S11 S22 -20 2.8 2.9 3.0 3.1 3.2 3.3 3.4 Frequency (GHz) 3.5 3.6 3.7 3.8 Frequency (GHz) Figure 2. Gain, Efficiency & Output Power vs Frequency mA, Pulse Width = 100 us, Duty Cycle = 10%, Tcase = 25°C VDD = 50 V IDQ = 125 Figure 2. CGHV35060MP Output Power vs. Input Power Vdd = 50V IDQ = 125mA, Pulse Width = 100us, Duty Cycle = 10%, Tcase = 25°C 105 40 95 35 Output Power 90 30 85 80 25 Efficiency 70 20 65 Gain 60 55 15 50 45 Power 40 Efficiency 35 Gain Power Gain (dB) 75 Power Gain (dB) Power (W) and Drain Efficiency (%) Power (W) and Drain Efficiency (%) 100 10 5 30 25 3.1 3.2 3.3 Input Power (dBm) 3.4 3.5 0 Frequency (GHz) Rev 2.3 - July 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV35060MP 4 Typical Performance Figure 3. CGHV35060MP-AMP1 Output Power vs. Input Power VDD = 50 V IDQ = 125 mA,3. Pulse WidthOutput = 100Power us, Duty Cycle Figure CGHV35060MP vs. Input Power= 10%, Tcase = 25°C Vdd = 50V IDQ = 125mA, Pulse Width = 100us, Duty Cycle = 10%, Tcase = 25°C 52 48 Output Power (dBm) Output Power (dBm) 50 46 Pout 3.1 GHz 44 Pout 3.2 GHz 42 Pout 3.3 GHz Pout 3.4 GHz 40 Pout 3.5 GHz 38 21 22 23 24 25 26 27 28 29 Input Power (dBm) 30 31 32 33 34 35 Input Power (dBm) Figure 4. CGHV35060MP-AMP1 Gain & Efficiency vs Input Power mA, 4.Pulse Width = 100 us, Duty Cycle = 10%, Tcase = 25°C VDD = 50 V IDQ = 125Figure CGHV35060MP Output Power vs. Input Power 65 19 60 18 55 17 50 16 45 15 40 14 35 13 30 12 25 20 15 10 Gain (dB) 20 Gain (dB) Drain Efficiency (%) Drain Efficiency (%) Vdd = 50V IDQ = 125mA, Pulse Width = 100us, Duty Cycle = 10%, Tcase = 25°C 70 21 22 23 24 25 26 27 28 29 Input Power (dBm) DEff 3.1 GHz DEff 3.2 GHz DEff 3.3 GHz DEff 3.4 GHz DEff 3.5 GHz Gain 3.1 GHz Gain 3.2 GHz Gain 3.3 GHz Gain 3.4 GHz Gain 3.5 GHz 30 31 32 33 34 11 10 9 35 8 Input Power (dBm) Rev 2.3 - July 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV35060MP 5 Typical Performance Figure 5. CGHV35060MP-AMP1 Tj_rise vs. Input Power VDD = 50 V IDQ = 125 mA, Pulse Width = 100 us, Duty Cycle = 10%, Tcase = 25°C Tj_rise (°C) Tj_rise (°C) Figure 5. CGHV35060MP Tj_rise vs. Input Power Vdd = 50V IDQ = 125mA, Pulse Width = 100us, Duty Cycle = 10%, Tcase = 25°C 125 120 115 110 105 100 95 90 85 80 75 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 T_rise 3.1 GHz T_rise 3.2 GHz T_rise 3.3 GHz T_rise 3.4 GHz T_rise 3.5 GHz 21 22 23 24 25 26 27 28 29 Input Power (dBm) 30 31 32 33 34 35 Input Power (dBm) Figure 6. CGHV35060MP-AMP1 Output Power vs. Time, Varying Pulse Lengths VDD = 50 V PINOutput = 35 dBm, Duty Cycle = 10% Figure 6. - CGHV35060MP Power vs. Time, Varying Pulse Lengths Vdd = 50V, PIN = 35 dBm, Duty Cycle = 10% 50.0 100us 200us 49.5 300us 500uS Power (dBm) Power (dBm) 49.0 48.5 48.0 47.5 47.0 0 50 100 150 200 250 300 Time (us) 350 400 450 500 550 600 Time (us) Rev 2.3 - July 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV35060MP 6 CGHV35060MP Power Dissipation De-rating Curve Power dissipation derating curve vs. Max Tcase Pulsed (100 uS/ 10% duty) 100 90 Power Dissipation (W) 80 Power dissipation (W) 70 60 50 Note 1 40 30 20 Pulse 100uS / 10% 10 0 0 50 100 150 200 250 Case Temperature (C) Case Temperature (C) Note 1. Area exceeds Maximum Case Temperature (See Page 2) CGHV35060MP-AMP1 Application Circuit Bill of Materials Designator Description Qty R1 RES,1/16W,0603,1%,150 OHMS 1 R20,R21 RES,1/16W,0603,1%,10.0 OHMS 2 C1 CAP, 2.2pF, +/-0.1pF, 0603, ATC 1 C2,C20-C30 CAP, 10.0pF, +/-5%, 0603, ATC 12 C3,C4 CAP, 1.3pF, +/-0.1pF, 0603, ATC 2 C11,C14 CAP, 0.7pF, +/-0.05pF, 0603, ATC 2 C13,C12 CAP, 0.9pF, +/-0.05 pF, 0603, ATC 2 C15,C16 CAP, 1.0pF, +/-0.05pF, 0603, ATC 2 C17 CAP, 0.1pF, +/-0.05pF, 0603, ATC 1 C41,C42,C43 CAP CER 2.2UF 100V 10% X7R 1210 3 C51,C53 CAP CER 10UF 100V 20% X7S 2220 2 C61 CAP, 33 UF, 20%, G CASE, 100V 1 J1,J2 SMA PANEL RECEPTACLE JACK 2 J3 HEADER RT>PLZ .1CEN LK 5POS 1 Cu BASEPLATE 2.6 x 1.7 x 0.25” WITH PEDESTAL FOR GULLWING eTSSOP 1 PCB, TEST FIXTURE, RO4350, .020 THK, CGHV35060MP 1 2-56 SOC HD SCREW 1/4 SS 4 #2 SPLIT LOCKWASHER SS 4 PREFORM, eTSSOP, 0.174 x 0.130 x 0.005 1 60W, GaN HEMT TSSOP 20L, 2.7 -3.5GHz, 50V PLASTIC, "CGHV35060MP" 1 Q1 Rev 2.3 - July 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV35060MP 7 CGHV35060MP-AMP1 Application Circuit Outline CGHV35060MP-AMP1 Application Circuit Schematic Rev 2.3 - July 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV35060MP 8 Product Dimensions CGHV35060MP (4.4 mm TSSOP 20-Lead Package) Rev 2.3 - July 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV35060MP 9 Part Number System CGHV35060MP Plastic Overmold Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Table 1. Parameter Value Units Upper Frequency1 3.5 GHz Power Output 60 W Package MP - Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Table 2. Rev 2.3 - July 2021 Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV35060MP 10 Product Ordering Information Order Number Description Unit of Measure CGHV35060MP GaN HEMT Each CGHV35060MP-AMP1 Test board with GaN HEMT installed Each Rev 2.3 - July 2021 Image 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV35060MP 11 For more information, please contact: 4600 Silicon Drive Durham, North Carolina, USA 27703 www.wolfspeed.com/rf Sales Contact rfsales@cree.com Notes & Disclaimer Specifications are subject to change without notice. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. Cree products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. No responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from use of the information contained herein. No license is granted by implication or otherwise under any patent or patent rights of Cree. © 2014 – 2021 Cree, Inc. All rights reserved. Wolfspeed® and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev 2.3 - July 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com