SST16A-800BW

SST16 Series Technical Data Data Sheet N2102, Rev.- SST16 Series 16A TRIACs Circuit Diagram TO-220A(Ins) TO-220B(Non-Ins) Description With high ability to withstand the shock loading of large current, SST16 series triacs provide high dv/dt rate with strong resistance to electromagnetic interface. With high commutation performances, 3 quadrants products especially recommended for use on inductive load. Maximum Ratings: Characteristics Symbol Storage junction temperature range Condition Max. Units Tstg - -40-150 ℃ Tj - -40-125 ℃ Repetitive peak off-state voltage(Tj=25℃) VDRM - 800 V Repetitive peak reverse voltage(Tj=25℃) VRRM - 800 V Non repetitive surge peak Off-state voltage VDSM - VDRM +100 V Non repetitive peak reverse voltage VRSM - VRRM +100 V 16 A 160 A Operating junction temperature range RMS on-state current Non repetitive surge peak on-state current (full cycle, F=50Hz) I2t value for fusing (tp=10ms) Critical rate of rise of on-state current (IG=2×IGT) Peak gate current Average gate power dissipation Peak gate power I(TRMS) ITSM TO-220A(Ins)(TC=86℃) TO-220B(Non-Ins)(TC=107℃) - I2t - 128 A2 s dI/dt - 50 A/μs IGM 4 A PG(AV) - 1 W PGM - 5 W  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SST16 Series Technical Data Data Sheet N2102, Rev.- Electrical Characteristics(Tj=25℃ unless otherwise specified) 3 Quadrants Symbol IGT Test Condition VD =12V RL =33Ω VGT VD =VDRM Tj =125℃ RL =3.3KΩ VGD Value Quadrant BW CW 50 35 Unit Ⅰ-Ⅱ-Ⅲ MAX Ⅰ-Ⅱ-Ⅲ MAX 1.3 V Ⅰ-Ⅱ-Ⅲ MIN 0.2 V Ⅰ-Ⅲ 70 50 80 60 IL IG =1.2IGT IH IT =100mA MAX 60 40 mA VD=2/3VDRM Gate Open Tj =125℃ MIN 1000 500 V/μs dV/dt Ⅱ MAX mA 4 Quadrants Symbol Test Condition Ⅰ-Ⅱ-Ⅲ IGT VD =12V RL =33Ω Ⅳ VGT VD =VDRM Tj =125℃ RL =3.3KΩ VGD Value Quadrant MAX B C 50 25 70 50 mA Unit mA ALL MAX 1.5 V ALL MIN 0.2 V Ⅰ-Ⅲ-Ⅳ 70 50 80 IG =1.2IGT IH IT =100mA MAX 60 40 mA VD=2/3VDRM Gate Open Tj=125℃ MIN 500 200 V/μs dV/dt Ⅱ MAX 100 IL mA Static Characteristics Symbol VTM Parameter ITM =22.5A tp=380μs IDRM IRRM VD =VDRM VR =VRRM Value(MAX) Unit Tj=25℃ 1.5 V Tj=25℃ 5 μA Tj=125℃ 2 mA Value Units TO-220A(Ins) 2.1 ℃/W TO-220B(Non-Ins) 1.2 ℃/W Thermal Resistances Symbol Rth(j-c) Condition Junction to case(AC)  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SST16 Series Technical Data Data Sheet N2102, Rev.- Ordering Information S ST 16 A -800 BW SMC Diode Solutions BW: IGT1-3 ≤ 50mA CW: IGT1-3 ≤ 35mA Triacs IT(RMS):16A 800:VDRM/VRRM ≥ 800V A: TO-220A(Ins) B:TO-220B(Non-Ins) Device SST16A-800CW, SST16A-800BW SST16B-800CW, SST16B-800BW Package TO-220A(Ins) TO-220B(Non-Ins) Shipping 50pcs/ Tube 50pcs/ Tube Marking Diagram Where XXXXX is YYWWL SST16A-800BW YY WW L = Part name = Year = Week = Lot Number Mechanical Dimensions TO-220A(Ins) SYMBOL Millimeters Min. A B C C2 C3 D E F G H L1 L2 L3 V1 4.40 0.61 0.46 1.21 2.40 8.60 9.60 6.55 28.0 1.14 2.65 Typ. 2.54 3.75 45° Inches Max. Min. 4.60 0.88 0.70 1.32 2.72 9.70 10.4 6.95 0.173 0.024 0.018 0.048 0.094 0.339 0.378 0.258 29.8 1.102 1.70 2.95 0.045 0.104  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  Typ. 0.1 0.148 45° Max. 0.181 0.035 0.028 0.052 0.107 0.382 0.409 0.274 1.173 0.067 0.116 SST16 Series Technical Data Data Sheet N2102, Rev.- Mechanical Dimensions TO-220B(Non-Ins) SYMBOL Millimeters Min. A B C C2 C3 D E F G H L1 L2 L3 V1 4.40 0.61 0.46 1.21 2.40 8.60 9.60 6.20 28.0 1.14 2.65 Typ. 2.54 3.75 45° Inches Max. Min. 4.60 0.88 0.70 1.32 2.72 9.70 10.4 6.60 0.173 0.024 0.018 0.048 0.094 0.339 0.378 0.244 Typ. 29.8 1.102 1.70 2.95 0.045 0.104 Max. 0.181 0.035 0.028 0.052 0.107 0.382 0.409 0.260 0.1 1.173 0.148 0.067 0.116 45° Ratings and Characteristics Curves FIG.1 Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature P(w) 24 IT(RMS) (A) 24 20 20 16 16 12 12 8 8 4 4 0 0 4 IT(RMS) (A) 8 12 16 20 FIG.3: Surge peak on-state current versus number of cycles 0 0 α=180° TO-220B (Non-Ins) TO-220A(Ins) Tc (℃) 25 50 75 100 125 4 5 FIG.4: On-state characteristics (maximum values) ITM (A) 200 ITSM (A) 200 t=20ms One cycle 160 100 Tj=Tjmax 120 10 80 Tj=25℃ 40 0 1 Number of cycles 10 100 1000 1 0 1 2 VTM (V) 3  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SST16 Series Technical Data Data Sheet N2102, Rev.- FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp