TSM9ND50CI

TSM9ND50CI Taiwan Semiconductor N-Channel Power MOSFET 500V, 9A, 0.9Ω FEATURES KEY PERFORMANCE PARAMETERS ● 100% UIS and Rg tested PARAMETER VALUE UNIT VDS 500 V RDS(on) (max) 0.9 Ω Qg 24.5 nC ● Advanced planar process ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Power Supply ● AC/DC LED Lighting ITO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±30 V 9 A 5.7 A IDM 36 A Continuous Drain Current Pulsed Drain Current TC = 25°C (Note 1) ID TC = 100°C (Note 2) Total Power Dissipation @ TC = 25°C PDTOT 50 W Single Pulse Avalanche Energy (Note 3) EAS 302.5 mJ Single Pulse Avalanche Current (Note 3) IAS 5.5 A TJ, TSTG - 55 to +150 °C SYMBOL MAXIMUM UNIT Junction to Case Thermal Resistance RӨJC 2.5 °C/W Junction to Ambient Thermal Resistance RӨJA 62 °C/W Operating Junction and Storage Temperature Range THERMAL PERFORMANCE PARAMETER Thermal Performance Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. RӨJC is guaranteed by design while RӨCA is determined by the user’s board design. 1 Version: A1807 TSM9ND50CI Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 500 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2.5 2.8 3.8 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V IDSS -- -- 1 µA RDS(on) -- 0.6 0.9 Ω Qg -- 24.5 -- Qgs -- 5 -- Qgd -- 8.3 -- Ciss -- 1116 -- Coss -- 83 -- Crss -- 1 -- Rg -- 1 2 td(on) -- 8.6 -- Drain-Source On-State Resistance (Note 4) Dynamic VGS = 10V, ID = 2.3A (Note 5) Total Gate Charge VDS = 400V, ID = 4.5A, Gate-Source Charge VGS = 10V Gate-Drain Charge Input Capacitance VDS = 50V, VGS = 0V, Output Capacitance f = 1.0MHz Reverse Transfer Capacitance Gate Resistance Switching nC pF Ω (Note 6) Turn-On Delay Time Turn-On Rise Time VDD = 250V, RG = 5Ω, tr -- 19 -- Turn-Off Delay Time ID = 4.5A, VGS = 10V td(off) -- 22 -- tf -- 21 -- Body-Diode Continuous Forward Current IS -- -- 9 A Body-Diode Pulsed Current ISM -- -- 36 A VSD -- -- 1.2 V Turn-Off Fall Time ns Source-Drain Diode Forward On Voltage (Note 4) IS = 4.5A, VGS = 0V Reverse Recovery Time IS = 4.5A trr -- 225 -- ns Reverse Recovery Charge dIF/dt = 100A/μs Qrr -- 1.8 -- μC Notes: 1. Current limited by package. 2. Pulse width limited by the maximum junction temperature. 3. L = 20mH, IAS = 5.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%. 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. o ORDERING INFORMATION ORDERING CODE PACKAGE PACKING TSM9ND50CI C0G ITO-220 50pcs / Tube 2 Version: A1807 TSM9ND50CI Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Output Characteristics 10 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V 8 6 ID, Drain Current (A) ID, Drain Current (A) 10 Transfer Characteristics 4 8 6 4 25℃ 2 2 -55℃ 150℃ 0 0 2 4 6 8 10 0 2 3 4 5 VGS, Gate to Source Voltage (V) On-Resistance vs. Drain Current Gate-Source Voltage vs. Gate Charge 1 0.9 0.8 0.7 0.6 VGS=10V 0.5 0.4 0.3 6 10 VDS=400V ID=4.5A 8 6 4 2 0 0 2 4 6 8 10 0 3 VGS=10V ID=2.3A 2 1.5 1 0.5 0 -75 -50 -25 0 25 50 75 10 15 20 25 On-Resistance vs. Gate-Source Voltage RDS(on), Drain-Source On-Resistance (Ω) On-Resistance vs. Junction Temperature 2.5 5 Qg, Gate Charge (nC) ID, Drain Current (A) RDS(on), Drain-Source On-Resistance (Normalized) 1 VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) RDS(on), Drain-Source On-Resistance (Ω) 0 100 125 150 TJ, Junction Temperature (°C) 3 1.2 1.1 1 0.9 0.8 0.7 0.6 ID=2.3A 0.5 0.4 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) Version: A1807 TSM9ND50CI Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) BVDSS vs. Junction Temperature Capacitance vs. Drain-Source Voltage 1.2 BVDSS (Normalized) Drain-Source Breakdown Voltage 2000 1800 C, Capacitance (pF) 1600 1400 CISS 1200 1000 800 600 400 200 COSS CRSS ID=250uA 1.1 1 0.9 0.8 0 0.1 1 10 100 -75 1000 VDS, Drain to Source Voltage (V) -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area, Junction-to-Case Source-Drain Diode Forward Current vs. Voltage 10 IS, Reverse Drain Current (A) 100 RDS(ON) ID, Drain Current (A) -50 10 1 0.1 SINGLE PULSE RӨJC=2.5°C/W TC=25°C 0.01 1 150℃ 25℃ -55℃ 0.1 1 10 100 1000 0 VDS, Drain to Source Voltage (V) 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, Body Diode Forward Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance, ZӨJC 10 SINGLE PULSE RӨJC=2.5°C/W 1 0.1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single 0.01 0.001 0.0001 0.001 0.01 Notes: Duty = t1 / t2 TJ = TC + PDM x ZӨJC x RӨJC 0.1 1 10 t, Square Wave Pulse Duration (sec) 4 Version: A1807 TSM9ND50CI Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) ITO-220 MARKING DIAGRAM TSC 9ND50 GYWWF G Y WW F = Halogen Free = Year Code = Week Code (01~52) = Factory Code 5 Version: A1807 TSM9ND50CI Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: A1807