MMBT8050D-1.5A

MMBT8050-1.5A NPN Transistor SOT-23 Features  For Switching and AF Amplifier Applications. Equivalent Circuit 1.Base 2.Emitter 3.Collector 3.Collector Marking Code : MMBT8050C-1.5A : X1 MMBT8050D-1.5A : Y1 1.Base 2.. Emitter Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 6 V Collector Current IC 1.5 A Maximum Power Dissipation PD 625 mW Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ Storage Temperature Range www.pingjingsemi.com Revision：3.0 Jun-2022 1/6 MMBT8050-1.5A NPN Transistor Electrical Characteristics (TA=25℃) Parameter Symbol Min. Max. Unit 100 250 160 400 40 -- ICBO -- 100 nA IEBO -- 100 nA V(BR)CBO 40 -- V V(BR)CEO 25 -- V V(BR)EBO 6 -- V VCE(sat) -- 0.5 V VBE(sat) -- 1.2 V VBE(on) -- 1 V FT 120 -- MHz DC Current Gain at VCE = 1 V, IC = 100 mA Gain Group C D HFE at VCE = 1 V, IC = 800 mA Collector Base Cutoff Current at VCB = 35 V Emitter Base Cutoff Current at VEB = 6 V Collector Base Breakdown Voltage at IC = 100 μA Collector Emitter Breakdown Voltage at IC = 2 mA Emitter Base Breakdown Voltage at IE = 100 μA Collector Emitter Saturation Voltage at IC = 800 mA, IB = 80 mA Base Emitter Saturation Voltage at IC = 800 mA, IB = 80 mA Base Emitter On Voltage at VCE = 1 V, IC = 10 mA Transition Frequency at VCE = 10 V, IC = 50 mA www.pingjingsemi.com Revision：3.0 Jun-2022 -- 2/6 MMBT8050-1.5A NPN Transistor Collector Current IC (mA) Typical Characteristic Curves VCE=1V DC Current Gain hFE IB=3.0mA IB=2.5mA IB=2.0mA IB=1.5mA IB=1.0mA IB=0.5mA Collector Current IC (mA) Collector-Emitter Voltage VCE (V) IC=10IB Saturation Voltage VBE(sat), VCE(sat) (mV) Collector Current IC (mA) VCE=1V VCE(sat) Collector Current IC (mA) Transition Frequency fT (MHz) Base-Emitter Voltage VBE (V) VCE=10V Output Capacitance Cob (pF) VBE(sat) f=1MHz IE=0 Collector-Base Voltage VCB (V) Collector Current IC (mA) Power Disspation PD (mW) 500 400 300 200 100 0 0 25 50 75 100 125 150 Ambient Temperature TA (℃) www.pingjingsemi.com Revision：3.0 Jun-2022 3/6 MMBT8050-1.5A NPN Transistor Package Outline SOT-23 Dimensions in mm Ordering Information Device Package Shipping MMBT8050-1.5A SOT-23 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：3.0 Jun-2022 4/6 MMBT8050-1.5A NPN Transistor Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：3.0 Jun-2022 5/6 MMBT8050-1.5A NPN Transistor Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 Symbol A B C E F D T1 T2 B C E Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F Reel (7'') www.pingjingsemi.com Revision：3.0 Jun-2022 6/6