MMBT3906

MMBT3906 NP General Purpose Transistor FEATURES  Epitaxial planar die construction.  Complementary NPN type available (MMBT3904).  Collector Current Capability ICM =-200mA.  Low Voltage(Max:-40V). 2A JS APPLICATIONS Ideal for medium power amplification and switching. SOT-23 O CR MI  MAXIMUM RATING @ Ta=25℃ unless otherwise specified PARAMETER collector-emitter voltage VEBO emitter-base voltage IC collector current (DC) ICM peak collector current IBM peak base current Ptot total power dissipation Tstg Tj UNIT open emitter -40 V open base -40 V -6 V open collector uc nd VCEO Value co collector-base voltage CONDITIONS mi VCBO Se SYMBOL mA 250 mW storage temperature -65 to +150 °C junction temperature 150 -200 mA -100 mA r to Tamb≤25°C -200 °C Note Transistor mounted on an FR4 printed-circuit board. www.jsmsemi.com 第１／５页 MMBT3906 NP General Purpose Transistor ELECTRICAL CHARACTERISTICS @ Ta=25℃ SYMBOL PARAMETER unless otherwise specified CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = -30 V - -50 nA IEBO emitter cut-off current IC = 0; VEB =- 6 V - -50 nA DC current gain VCE = -1V; IC= -0.1mA IC = -1mA IC = -10mA IC = -50mA IC = -100mA 60 80 100 60 30 300 - hFE JS collector-emitter saturation voltage IC = -10mA; IB = -1mA - -200 mV IC = -50mA; IB = -5mA - -300 mV VBEsat base-emitter saturation voltage IC = -10mA; IB = -1mA - -850 mV IC = -50mA; IB = -5mA - -950 mV CR MI VCEsat collector capacitance IE = Ie= 0; VCB = -5 V; f = 1 MHz - 4.5 pF Ce emitter capacitance IC = Ic= 0; VEB = -500 mV; f = 1 MHz - 10 pF fT transition frequency IC = -10mA; VCE = -20 V; f = 100MHz 250 - MHz - 4 dB - 65 ns - 35 ns - 35 ns - 300 ns - 225 ns - 75 mi Se IC = -100μA; VCE = -5V; RS = 1 kΩ;f = 10Hz to15.7 kHz noise figure co NF O Cc Switching times (between 10% and 90% levels); td delay time tr rise time toff turn-off time ts storage time tr fall time Pulse test: tp≤300 ms; d≤0.02. www.jsmsemi.com ns r Note ICon= -10mA; IBon = -1mA; IBoff= -1mA to Turn-on time uc nd ton 第２／５页 MMBT3906 NP General Purpose Transistor TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified O CR MI JS r to uc nd co mi Se www.jsmsemi.com 第３／５页 MMBT3906 NP General Purpose Transistor O CR MI JS mi Se PACKAGE OUTLINE Plastic surface mounted package SOT-23 co A uc nd E K SOT-23 B Min Max A 2.70 3.10 B 1.10 1.50 C 0.90 1.10 0.30 0.50 0.35 0.48 D G H C E r J D to Dim G 1.80 2.00 H 0.02 0.10 J 0.05 0.15 K 2.20 2.60 All Dimensions in mm www.jsmsemi.com 第４／５页 MMBT3906 NP General Purpose Transistor SOLDERING FOOTPRINT 0.95 0.95 2.00 JS 0.90 MI Unit : mm 0.80 O CR PACKAGE INFORMATION Package Shipping MMBT3906 SOT-23 3000pcs / Tape & Reel r to uc nd co mi Se Device www.jsmsemi.com 第５／５页