MMBTA92
PNP High Voltage Amplifier
FEATURES
Epitaxial planar die construction.
Complementary NPN type available
(MMBTA42).
Ideal for medium power amplification and switching.
2D
APPLICATIONS
JS
High voltage driver applications.
CR
MI
SOT-23
O
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
VEBO
emitter-base voltage
IC
collector current (DC)
Tj ,Tstg
V
-300
V
-5
V
-0.5
A
Thermal resistance,junction to ambient
Collector dissipation
417
0.3
junction and storage temperature
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°C/W
r
PC
-300
to
RθJA
UNIT
uc
nd
collector-emitter voltage
co
VCEO
mi
collector-base voltage
Se
VCBO
Value
-55 to +150
W
°C
第1/4页
MMBTA92
PNP High Voltage Amplifier
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Test conditions
MIN.
V(BR)CBO
Collector-base breakdown voltage
IC=-100μA,IE=0
-300
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA,IB=0
-300
V(BR)EBO
Emitter-base breakdown voltage
IE=-100μA,IC=0
-5
IE = 0; VCB = -200V
IC = 0; VEB = -3V
ICBO
JS
Symbol
MI
IEBO
collector cut-off current
emitter cut-off current
CR
VCE = -10V; IC= -1mA
VCE = -10V;IC= -10mA
VCE = -10V;IC= -30mA
VCE(sat)
collector-emitter saturation voltage
IC = -20mA; IB = -2mA
VBE(sat)
base-emitter saturation voltage
hFE
DC current gain
O
UNIT
-
-0.25
μA
-
-0.1
μA
25
40
25
-
-
-0.5
V
-
-0.9
V
-
6.0
pF
50
-
mi
IC = -20mA; IB = -2mA
co
Collector output capacitance
VCB=-20V,f=1.0MHz
transition frequency
IC = -10mA; VCE = -20V;
f = 100MHz
uc
nd
fT
Se
Cob
MAX.
MHz
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
r
to
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第2/4页
MMBTA92
PNP High Voltage Amplifier
O
CR
MI
JS
r
to
uc
nd
co
mi
Se
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第3/4页
MMBTA92
PNP High Voltage Amplifier
PACKAGE OUTLINE
Plastic surface mounted package
SOT-23
A
SOT-23
Dim
Min
Max
A
2.70
3.10
B
1.10
1.50
C
0.90
1.10
D
0.30
0.50
E
0.35
0.48
G
1.80
2.00
H
0.02
0.10
J
0.05
0.15
K
2.20
2.60
E
K
B
JS
MI
J
D
CR
G
O
H
C
mi
0.95
Se
SOLDERING FOOTPRINT
All Dimensions in mm
0.95
uc
nd
co
2.00
Unit : mm
0.80
r
to
0.90
PACKAGE INFORMATION
Device
Package
Shipping
MMBTA92
SOT-23
3000/Tape&Reel
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第4/4页
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