DATA SHEET
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MOSFET - Power, Single
N-Channel
V(BR)DSS
60 V, 5.3 mW, 89 A
RDS(on) MAX
5.3 mW @ 10 V
60 V
7.3 mW @ 4.5 V
ID MAX
89 A
NVTYS005N06CL
N−Channel
Features
•
•
•
•
•
D (5 − 8)
Small Footprint (3.3 x 3.3 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
G (4)
S (1, 2, 3)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
±20
V
ID
89
A
Continuous Drain
Current RqJC
(Notes 1, 2, 3, 4)
TC = 25°C
Power Dissipation
RqJC (Notes 1, 2, 3)
Continuous Drain
Current RqJA
(Notes 1, 3, 4)
Steady
State
TC = 100°C
TC = 25°C
PD
Steady
State
W
76
TC = 100°C
TA = 25°C
Power Dissipation
RqJA (Notes 1, 3)
63
LFPAK8
3.3x3.3
CASE 760AD
38
ID
A
18
TA = 100°C
13
005N
06CL
AWLYW
PD
3.2
IDM
430
A
TJ, Tstg
−55 to
+175
°C
IS
63
A
005N06CL = Specific Device Code
A
= Assembly Location
WL = Wafer Lot
Y
= Year
W
= Work Week
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 4.9 A)
EAS
155
mJ
(Note: Microdot may be in either location)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Pulsed Drain Current
TA = 25°C
TA = 100°C
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Range
Source Current (Body Diode)
W
MARKING DIAGRAM
1.6
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol
Value
Unit
°C/W
Junction−to−Case − Steady State (Note 3)
RqJC
2.0
Junction−to−Ambient − Steady State (Note 3)
RqJA
46.7
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which substantially
less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2019
September, 2021 − Rev. 2
1
Publication Order Number:
NVTYS005N06CL/D
NVTYS005N06CL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
VGS = 0 V,
VDS = 60 V
V
TJ = 25°C
10
TJ = 125°C
250
100
mA
IGSS
VDS = 0 V, VGS = 20 V
nA
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 75 mA
2.2
V
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V, ID = 50 A
4.4
5.3
mW
VGS = 4.5 V, ID = 50 A
6.1
7.3
VDS = 5 V, ID = 50 A
100
S
1890
pF
ON CHARACTERISTICS (Note 5)
Forward Transconductance
gFS
1.2
CHARGES AND CAPACITANCES
Ciss
Input Capacitance
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
VGS = 4.5 V, VDS = 48 V, ID = 50 A
1060
11
11.5
nC
2.7
nC
5.3
2.9
VGS = 10 V, VDS = 48 V, ID = 50 A
25
nC
15
ns
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
VGS = 4.5 V, VDS = 48 V,
ID = 50 A, RG = 2.5 W
tf
9
19
8
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.9
TJ = 125°C
0.8
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 50 A
43
VGS = 0 V, dlS/dt = 100 A/ms,
IS = 50 A
QRR
1.2
V
ns
14
29
32
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NVTYS005N06CL
TYPICAL CHARACTERISTICS
100
10 V to 4.5 V
ID, DRAIN CURRENT (A)
3.4 V
60
3.2 V
50
40
3.0 V
30
20
2.8 V
10
2.6 V
0
0.5
1.0
1.5
2.0
70
60
50
40
TJ = 25°C
30
20
0
2.5
TJ = 125°C
0
12
10
2.5
3.0
3.5
8
6
4
4
5
6
7
8
10
9
VGS, GATE VOLTAGE (V)
4.0
10
TJ = 25°C
9
8
7
VGS = 4.5 V
6
5
VGS = 10 V
4
3
2
5
10
15
20
25
35
30
40
45
50
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100000
VGS = 10 V
ID = 50 A
TJ = 175°C
10000
IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
2.0
Figure 2. Transfer Characteristics
14
1.5
1.0
0.5
0
−50
1.5
Figure 1. On−Region Characteristics
16
2.0
1.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
18
2.5
0.5
TJ = −55°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ = 25°C
ID = 50 A
3
80
10
20
2
VDS = 5 V
90
80
70
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
100
3.6 V
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
90
TJ = 150°C
TJ = 125°C
1000
TJ = 85°C
100
10
TJ = 25°C
1
−25
0
25
50
75
100
125
150
175
0.1
10
20
30
40
50
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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60
NVTYS005N06CL
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
10000
1000
COSS
100
10
1
VGS = 0 V
TJ = 25°C
f = 1 MHz
0
1000
CRSS
10
20
30
40
50
5
QGD
QGS
4
3
VDS = 48 V
ID = 50 A
TJ = 25°C
2
1
0
0
5
10
15
20
25
100
VGS = 4.5 V
VDS = 48 V
ID = 50 A
tr
tf
td(off)
td(on)
1
10
10
1
100
TJ = 125°C
0.3
0.4
TJ = 25°C
0.5
0.6
TJ = −55°C
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
IPEAK, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
6
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
10 ms
10
0.1
7
Figure 7. Capacitance Variation
1000
1
8
QG, TOTAL GATE CHARGE (nC)
10
1
9
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100
t, TIME (ns)
60
IS, SOURCE CURRENT (A)
C, CAPACITANCE (pF)
CISS
10
VGS ≤ 10 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
10
0.5 ms
1 ms
10 ms
1000
100
TJ(initial) = 25°C
10
TJ(initial) = 150°C
1
0.1
0.0001
0.001
0.01
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVTYS005N06CL
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
R(t) (°C/W)
10
1
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
NVTYS005N06CLTWG
Marking
Package
Shipping†
005N
06CL
LFPAK33
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVTYS005N06CL
PACKAGE DIMENSIONS
LFPAK8 3.3x3.3, 0.65P
CASE 760AD
ISSUE E
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