NVTYS002N03CLTWG

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. MOSFET – Power, Single, N-Channel 30 V, 140 A NVTYS002N03CL Features • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 29 A Continuous Drain Current RqJA TA = 25°C TA = 100°C Power Dissipation RqJA Continuous Drain Current RqJC TA = 25°C Steady State TC = 25°C ID TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL = 10.6 A) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) N−Channel MOSFET D (5−8) G (4) A 140 S (1,2,3) 99 PD 75 IDM 675 A TJ, Tstg −55 to +175 °C TC = 100°C Pulsed Drain Current W 3.2 1.6 TC = 100°C Power Dissipation RqJC 140 A 3.1 mW @ 4.5 V 20.5 PD TA = 100°C TC = 25°C ID MAX 2.25 mW @ 10 V 30 V MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter RDS(on) MAX MARKING DIAGRAM W 37 IS 62 A EAS 320 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. LFPAK8 3.3x3.3 CASE 760AD 002N 03CL AWLYW 002N03CL = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year W = Work Week ORDERING INFORMATION Device Package Shipping† NVTYS002N03CLTWG LFPAK33 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2019 May, 2021 − Rev. 0 1 Publication Order Number: NVTYS002N03CL/D NVTYS002N03CL THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction−to−Case (Drain) Parameter RqJC 2 Junction−to−Ambient – Steady State (Note 2) RqJA 47 Unit °C/W 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS V 17.1 VGS = 0 V, VDS = 24 V VGS = 0 V, VDS = 30 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 TJ = 25°C 10 Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA mA mA 100 nA 2.2 V ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) Forward Transconductance gFS Gate Resistance 1.3 −5.6 mV/°C VGS = 10 V ID = 50 A 1.9 2.25 VGS = 4.5 V ID = 50 A 2.8 3.1 VDS = 1.5 V, ID = 50 A mW 130 S RG 0.9 W Input Capacitance CISS 2697 Output Capacitance COSS CHARGES AND CAPACITANCES Reverse Transfer Capacitance VGS = 0 V, f = 1 MHz, VDS = 15 V 1548 pF CRSS 43 Total Gate Charge QG(TOT) 17 Threshold Gate Charge QG(TH) 3.8 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 3.8 Gate Plateau Voltage VGP 3 V 37 nC Total Gate Charge VGS = 4.5 V, VDS = 15 V; ID = 50 A QG(TOT) VGS = 10 V, VDS = 15 V; ID = 50 A 7 nC SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 18 VGS = 4.5 V, VDS = 15 V, ID = 50 A, RG = 3.0 W tf 9 22 9 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 ns NVTYS002N03CL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 11.5 VGS = 10 V, VDS = 15 V, ID = 50 A, RG = 3.0 W tf 4 ns 32 5 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.8 TJ = 125°C 0.7 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 50 A 1.1 V 44 VGS = 0 V, dIS/dt = 100 A/ms, IS = 50 A QRR 28 ns 13 28 nC 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NVTYS002N03CL TYPICAL CHARACTERISTICS 200 3.6 V 3.2 V 100 80 60 2.8 V 40 20 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0 160 ID, DRAIN CURRENT (A) 160 140 120 140 120 100 80 1 2 3 40 20 0 5 4 TJ = 125°C TJ = −55°C 3 2 5 4 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 9 TJ = 25°C ID = 50 A 8 7 6 5 4 3 2 1 0 3 4 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 5 TJ = 25°C 4 VGS = 4.5 V 3 VGS = 10 V 2 1 0 10 30 50 70 90 110 130 150 170 190 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 100K 3 VGS = 10 V ID = 50 A TJ = 175°C 10K IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 1 0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 10 2 TJ = 25°C 60 VGS = 2.4 V 0 VDS = 5 V 180 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 200 4 V to 10 V 180 2 1 TJ = 150°C 1K TJ = 125°C 100 TJ = 85°C 10 TJ = 25°C 1 0.1 0.01 0 −50 −25 0 25 50 75 100 125 150 175 0.001 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 4 30 NVTYS002N03CL TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 10K C, CAPACITANCE (pF) CISS 1K COSS 100 CRSS 10 1 VGS = 0 V TJ = 25°C f = 1 MHz 0 10 5 15 25 20 30 6 5 4 3 2 VDS = 15 V TJ = 25°C ID = 50 A 1 0 5 0 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge IS, SOURCE CURRENT (A) td(off) 100 tf tr td(on) 10 1 10 TJ = 150°C TJ = 125°C 10 TJ = 25°C 1 0.1 100 VGS = 0 V TJ = −55°C 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1K 1K ID, DRAIN CURRENT (A) TJ = 175°C 100 TC = 25°C VGS ≤ 10 V Single Pulse 100 100 10 1 RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 10 ms 0.5 ms 1 ms 10 ms TJ (initial) = 100°C 10 1 100 TJ (initial) = 25°C IPEAK, (A) t, TIME (ns) VGS = 10 V VDS = 15 V ID = 50 A 0.1 20 15 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1K 1 QGD QGS 1000 0.00001 0.0001 0.001 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 5 0.01 NVTYS002N03CL TYPICAL CHARACTERISTICS 100 50% Duty Cycle R(t) (°C/W) 10 1 20% 10% 5% 2% 1% 0.1 0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) Figure 13. Thermal Characteristics www.onsemi.com 6 1 10 100 1000 NVTYS002N03CL PACKAGE DIMENSIONS LFPAK8 3.3x3.3, 0.65P CASE 760AD ISSUE E ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ◊ N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 www.onsemi.com 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NVTYS002N03CL/D