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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET - Power, Single
N-Channel
60 V, 9.8 mW, 51 A
NVTYS010N06CL
Features
•
•
•
•
•
Small Footprint (3.3 x 3.3 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
±20
V
ID
51
A
Continuous Drain
Current RqJC
(Notes 1, 2, 3, 4)
TC = 25°C
Power Dissipation
RqJC (Notes 1, 2, 3)
Continuous Drain
Current RqJA
(Notes 1, 3, 4)
Steady
State
TC = 100°C
TC = 25°C
Power Dissipation
RqJA (Notes 1, 3)
Pulsed Drain Current
Steady
State
PD
W
47
23
ID
PD
A
TJ, Tstg
−55 to
+175
°C
IS
38.7
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 2.3 A)
EAS
80
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
MARKING
DIAGRAM
1.6
217
Source Current (Body Diode)
S (1, 2, 3)
W
3.1
IDM
Operating Junction and Storage Temperature
Range
G (4)
9
TA = 100°C
TA = 25°C, tp = 10 ms
N−Channel
D (5 − 8)
A
13
TA = 100°C
TA = 25°C
51 A
15 mW @ 4.5 V
36
TC = 100°C
TA = 25°C
ID MAX
9.8 mW @ 10 V
60 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
RDS(on) MAX
Symbol
Value
Unit
Junction−to−Case − Steady State (Note 3)
RqJC
3.2
°C/W
Junction−to−Ambient − Steady State (Note 3)
RqJA
48
LFPAK8
3.3x3.3
CASE 760AD
010N
06CL
AWLYW
010N06CL = Specific Device Code
A
= Assembly Location
WL = Wafer Lot
Y
= Year
W
= Work Week
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which substantially
less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2019
May, 2021 − Rev. 1
1
Publication Order Number:
NVTYS010N06CL/D
NVTYS010N06CL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
26
VGS = 0 V,
VDS = 60 V
mV/°C
TJ = 25°C
10
TJ = 125°C
250
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 35 mA
100
mA
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
1.2
2.0
−5.48
VGS = 10 V
ID = 25 A
8.1
9.8
VGS = 4.5 V
ID = 25 A
12
15
gFS
VDS = 5 V, ID = 25 A
V
mV/°C
mW
55
S
pF
CHARGES AND CAPACITANCES
Input Capacitance
CISS
910
Output Capacitance
COSS
500
Reverse Transfer Capacitance
CRSS
VGS = 0 V, f = 1 MHz, VDS = 25 V
9
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 48 V; ID = 25 A
6
nC
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 48 V; ID = 25 A
13
nC
Threshold Gate Charge
QG(TH)
1.4
nC
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
2.8
V
td(ON)
7.3
ns
VGS = 10 V, VDS = 48 V; ID = 25 A
2.5
1.5
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 10 V, VDS = 48 V,
ID = 25 A, RG = 2.5 W
tf
2.3
17
2.5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
VGS = 0 V,
IS = 25 A
TJ = 25°C
0.9
TJ = 125°C
0.8
tRR
ta
tb
29
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 25 A
QRR
1.2
V
ns
13
16
12
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NVTYS010N06CL
TYPICAL CHARACTERISTICS
60
3.6 V
50
VGS = 4 V to 10 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
60
3.2 V
40
30
20
2.8 V
10
2.6 V
VDS = 10 V
50
40
30
20
TJ = 25°C
10
2.4 V
0
1
2
3
0
5
4
3
4
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
Figure 2. Transfer Characteristics
ID = 25 A
TJ = 25°C
40
30
20
10
3
4
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ = 25°C
18
16
14
VGS = 4.5 V
12
10
VGS = 10 V
8
6
10
15
20
30
35
40
45
50
55
60
ID, DRAIN CURRENT (A)
100,000
ID = 25 A
VGS = 10 V
TJ = 175°C
TJ = 150°C
10,000
1.0
25
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.5
1.5
5
20
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.0
2
Figure 1. On−Region Characteristics
50
2
1
0
TJ = −55°C
VGS, GATE−TO−SOURCE VOLTAGE (V)
60
0
TJ = 125°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
0
0.5
TJ = 125°C
1000
TJ = 85°C
100
10
TJ = 25°C
1
0
−50 −25
0
25
50
75
100
125
150
175
0.1
10
20
30
40
50
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
60
NVTYS010N06CL
C, CAPACITANCE (pF)
10,000
VGS = 0 V
TJ = 25°C
f = 1 MHz
Ciss
1000
VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
Coss
100
Crss
10
1
0
10
20
30
40
50
60
5
4
Qgd
Qgs
3
TJ = 25°C
VDS = 48 V
ID = 25 A
2
1
0
0
100
IS, SOURCE CURRENT (A)
t, TIME (ns)
6
2
4
6
8
10
VDS = 48 V
ID = 25 A
VGS = 0 V
tf
1
10
VGS = 0 V
10
TJ = 25°C
1
100
14
12
Figure 8. Gate−to−Source vs. Total Charge
tr
TJ = 125°C
0.2 0.3
0.4
0.5
TJ = −55°C
0.6
0.7
0.8
0.9
1.0
1.1 1.2
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
TC = 25°C
VGS ≤ 10 V
Single Pulse
IPEAK, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
7
Figure 7. Capacitance Variation
10 t
d(on)
100
8
Qg, TOTAL GATE CHARGE (nC)
td(off)
1000
QT
9
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100
1
10
10 ms
10
1
RDS(on) Limit
Thermal Limit
Package Limit
0.1
0.1
1
10
0.5 ms
1 ms
10 ms
10
TJ(initial) = 25°C
1
TJ(initial) = 150°C
0.1
100
1000
0.0001
0.001
0.01
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVTYS010N06CL
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
R(t) (°C/W)
10
1
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
NVTYS010N06CLTWG
Marking
Package
Shipping†
010N
06CL
LFPAK33
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVTYS010N06CL
PACKAGE DIMENSIONS
LFPAK8 3.3x3.3, 0.65P
CASE 760AD
ISSUE E
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
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◊
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