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onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET – Power, Single,
N-Channel
30 V, 98 A
NVTYS003N03CL
Features
•
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
ID
23
A
Continuous Drain
Current RqJA (Note 1)
TA = 25°C
TA = 100°C
Power Dissipation RqJA
(Note 1)
Continuous Drain
Current RqJC (Note 1)
TA = 25°C
Steady
State
Pulsed Drain Current
TC = 25°C
ID
Operating Junction and Storage Temperature
Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy
(IL = 7.4 Apk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
D (5−8)
G (4)
A
98
S (1,2,3)
70
PD
TC = 100°C
TA = 25°C, tp = 10 ms
N−Channel MOSFET
W
3
2
TC = 100°C
Power Dissipation
RqJC (Note 1)
98 A
5.1 mW @ 4.5 V
16
PD
TA = 100°C
TC = 25°C
ID MAX
3.6 mW @ 10 V
30 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
RDS(on) MAX
W
59
MARKING
DIAGRAM
30
IDM
446
A
TJ,
Tstg
−55 to
+175
°C
IS
50
A
EAS
173
mJ
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
003N
03CL
AWLYW
LFPAK8
3.3x3.3
CASE 760AD
003N03CL = Specific Device Code
A
= Assembly Location
WL = Wafer Lot
Y
= Year
W
= Work Week
ORDERING INFORMATION
Device
Package
Shipping†
NVTYS003N03CLTWG
LFPAK33
(Pb−Free)
3000 / Tape
& Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2019
May, 2021 − Rev. 0
1
Publication Order Number:
NVTYS003N03CL/D
NVTYS003N03CL
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case (Drain)
Parameter
RqJC
2.5
Junction−to−Ambient – Steady State
RqJA
47.2
Unit
°C/W
2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular
conditions noted.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
19
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.2
V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
RDS(on)
1.3
−5.46
mV/°C
VGS = 10 V
ID = 30 A
2.7
3.6
VGS = 4.5 V
ID = 30 A
4
5.1
mW
Forward Transconductance
gFS
VDS = 1.5 V, ID = 15 A
64
S
Gate Resistance
RG
TA = 25°C
0.8
W
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
1870
VGS = 0 V, f = 1 MHz, VDS = 15 V
983
pF
30
Capacitance Ratio
CRSS/CISS
Total Gate Charge
QG(TOT)
12
Threshold Gate Charge
QG(TH)
2.5
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
2
Gate Plateau Voltage
VGP
2.5
V
26
nC
Total Gate Charge
VGS = 0 V, VDS = 15 V, f = 1 MHz
VGS = 4.5 V, VDS = 15 V; ID = 30 A
QG(TOT)
VGS = 10 V, VDS = 15 V; ID = 30 A
0.016
5
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
15
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
7
20
7
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
ns
NVTYS003N03CL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
10
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
3
ns
27
4
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.82
TJ = 125°C
0.69
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 30 A
1.1
V
39
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
QRR
16.5
ns
17.6
17
nC
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NVTYS003N03CL
TYPICAL CHARACTERISTICS
200
4.0 V
3.6 V
120
100
3.2 V
80
60
2.8 V
40
20
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
0
140
120
100
80
0
1
2
4
3
40
20
0
5
TJ = 125°C
0
TJ = −55°C
2
3
4
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
9
8
7
6
5
4
3
2
1
3
4
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
8
5
TJ = 25°C
7
6
VGS = 4.5 V
5
4
VGS = 10 V
3
2
1
0
10
30
50
70
90
110
130
150
170 190
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
3
100K
VGS = 10 V
ID = 30 A
TJ = 175°C
10K
IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ = 25°C
ID = 30 A
2
TJ = 25°C
60
2.4 V
10
0
160
ID, DRAIN CURRENT (A)
160
140
VDS = 5 V
180
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
200
VGS = 10 V to 4.5 V
180
2
1
TJ = 150°C
1K
TJ = 125°C
100
TJ = 85°C
10
TJ = 25°C
1
0.1
0.01
0
−50 −25
0
25
50
75
100
125
150
175
0.001
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
30
NVTYS003N03CL
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
10,000
1000
COSS
100
CRSS
10
1
VGS = 0 V
TJ = 25°C
f = 1 MHz
5
0
1000
10
15
25
20
30
t, TIME (ns)
6
5
QGS
4
QGD
3
VDS = 15 V
TJ = 25°C
ID = 30 A
2
1
0
0
5
10
15
20
25
30
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
VGS = 10 V
VDS = 15 V
ID = 30 A
VGS = 0 V
100
td(off)
tf
tr
10
td(on)
1
10
TJ = 175°C
10
TJ = 150°C
TJ = 125°C
TJ = 25°C
1
0.1
100
TJ = −55°C
0.3
0.5
0.7
0.9
1.1
1.3
1.5
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10
1
0.1
TC = 25°C
Single Pulse
VGS ≤ 10 V
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
10
IPEAK (A)
ID, DRAIN CURRENT(A)
8
7
QG, TOTAL GATE CHARGE (nC)
100
1
9
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
IS, SOURCE CURRENT (A)
C, CAPACITANCE (pF)
CISS
10
10 ms
0.5 ms
1 ms
10 ms
TJ(initial) = 25°C
10
TJ(initial) = 100°C
100
1000
1
0.0001
0.001
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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5
0.01
NVTYS003N03CL
TYPICAL CHARACTERISTICS
100
Duty Cycle = 0.5
R(t) (°C/W)
10
1
0.2
0.1
0.05
0.02
0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.1
0.01
PULSE TIME (sec)
Figure 13. Thermal Characteristics
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6
1
10
100
1000
NVTYS003N03CL
PACKAGE DIMENSIONS
LFPAK8 3.3x3.3, 0.65P
CASE 760AD
ISSUE E
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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