NVTYS003N04CLTWG

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Other names and brands may be claimed as the property of others. MOSFET – Power, Single N-Channel 40 V, 3.4 mW, 107 A NVTYS003N04CL Features • • • • • www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX 3.4 mW @ 10 V 40 V 5.3 mW @ 4.5 V ID MAX 107 A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Notes 1, 3) TC = 25°C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State Pulsed Drain Current Value Unit VDSS 40 V VGS ±20 V ID 106 A TC = 100°C TC = 25°C PD Steady State TA = 100°C TA = 25°C W 69 34 ID D (5) G (4) 75 TC = 100°C TA = 25°C Power Dissipation RqJA (Notes 1, 2) Symbol A 23 S (1,2,3) N−CHANNEL MOSFET 16 PD TA = 100°C W 3.2 1.6 IDM 498 A TJ, Tstg −55 to +175 °C IS 57.1 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 7.4 A) EAS 179 mJ MARKING DIAGRAM Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C 003N 04CL AWLYW TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Range Source Current (Body Diode) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. LFPAK8 3.3x3.3 CASE 760AD Symbol Value Unit 003N04CL = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year W = Work Week Junction−to−Case − Steady State RqJC 2.2 °C/W (Note: Microdot may be in either location) Junction−to−Ambient − Steady State (Note 2) RqJA 46.7 THERMAL RESISTANCE MAXIMUM RATINGS Parameter 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2019 April, 2021 − Rev. 1 1 ORDERING INFORMATION See detailed ordering, marking and shipping information on page 5 of this data sheet. Publication Order Number: NVTYS003N04CL/D NVTYS003N04CL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 23 VGS = 0 V, VDS = 40 V mV/°C TJ = 25 °C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 60 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 1.2 2.0 −5.7 VGS = 10 V ID = 40 A 2.9 3.4 VGS = 4.5 V ID = 40 A 4.3 5.3 gFS VDS = 5 V, ID = 40 A V mV/°C 120 mW S CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 2240 VGS = 0 V, f = 1 MHz, VDS = 25 V 800 pF 21 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 32 V; ID = 40 A Total Gate Charge QG(TOT) 17 Threshold Gate Charge QG(TH) 3.5 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 5.5 Plateau Voltage VGP 3.1 td(ON) 17 VGS = 4.5 V, VDS = 32 V; ID = 40 A 36 nC 6.5 V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 32 V, ID = 40 A, RG = 2.5 W tf 13 ns 24 9 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 40 A TJ = 25°C 0.84 TJ = 125°C 0.72 tRR ta tb 1.2 V 34 VGS = 0 V, dIS/dt = 100 A/ms, IS = 40 A QRR 15 ns 19 14 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVTYS003N04CL TYPICAL CHARACTERISTICS 160 140 3.6 V 120 100 80 3.2 V 60 40 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 160 140 120 100 80 60 0 1 2 3 4 20 0 5 TJ = 125°C 0 4 5 Figure 2. Transfer Characteristics 30 25 20 15 10 5 0 4 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 6 TJ = 25°C 5 VGS = 4.5 V 4 VGS = 10 V 3 2 1 10 20 30 40 50 60 70 80 90 100 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1000 3.0 VGS = 10 V ID = 40 A TJ = 175°C 100 IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 3 Figure 1. On−Region Characteristics 35 2.0 1.5 1.0 0.5 0 −50 TJ = −55°C 2 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = 40 A 2.5 1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 40 3 TJ = 25°C 40 2.8 V 2.6 V 20 VDS = 10 V 180 4.4 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 200 VGS = 4.5 V to 10 V 180 ID, DRAIN CURRENT (A) 200 10 TJ = 125°C 1 TJ = 85°C 0.1 0.01 TJ = 25°C 0.001 −25 0 25 50 75 100 125 150 175 0.0001 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 40 NVTYS003N04CL TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 10000 C, CAPACITANCE (pF) CISS 1000 COSS 100 CRSS 10 1 VGS = 0 V TJ = 25°C f = 1 MHz 0 10 20 30 40 6 5 QGS 4 QGD 3 VDS = 32 V TJ = 25°C ID = 40 A 2 1 0 0 10 5 15 IS, SOURCE CURRENT (A) td(off) td(on) tf VGS = 4.5 V VDD = 32 V ID = 40 A 1 10 30 35 40 TJ = 125°C 30 TJ = 25°C 20 TJ = −55°C 10 0 100 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 1000 TJ(initial) = 25°C 100 10 10 TC = 25°C VGS ≤ 10 V Single Pulse 1 RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 IPEAK, (A) 10 ms 0.1 25 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 40 10 20 Figure 7. Capacitance Variation 100 t, TIME (ns) 8 7 QG, TOTAL GATE CHARGE (nC) tr ID, DRAIN CURRENT (A) 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 1 10 TJ(initial) = 150°C 1 0.5 ms 1 ms 10 ms 0.1 100 1000 0.0001 0.001 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 0.01 NVTYS003N04CL TYPICAL CHARACTERISTICS 100 50% Duty Cycle R(t) (°C/W) 10 1 20% 10% 5% 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Device NVTYS003N04CLTWG Marking Package Shipping† 003N 04CL LFPAK33 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NVTYS003N04CL PACKAGE DIMENSIONS LFPAK8 3.3x3.3, 0.65P CASE 760AD ISSUE A ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 www.onsemi.com 6 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative