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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET – Power, Single
N-Channel
40 V, 4.8 mW, 75 A
NVTYS005N04CL
Features
•
•
•
•
•
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Small Footprint (3.3 x 3.3 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
V(BR)DSS
RDS(on) MAX
4.8 mW @ 10 V
40 V
7.6 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
ID
75
A
Continuous Drain
Current RqJC
(Notes 1, 2, 3, 4)
TC = 25°C
Power Dissipation
RqJC (Notes 1, 2, 3)
Continuous Drain
Current RqJA
(Notes 1, 3, 4)
Steady
State
TC = 100°C
TC = 25°C
Power Dissipation
RqJA (Notes 1, 3)
Pulsed Drain Current
Steady
State
PD
25
ID
Operating Junction and Storage Temperature
Range
Source Current (Body Diode)
A
19
PD
3.1
IDM
326
A
TJ, Tstg
−55 to
+175
°C
IS
42
A
142
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Symbol
Value
Unit
Junction−to−Case − Steady State (Note 3)
RqJC
3.0
°C/W
Junction−to−Ambient − Steady State (Note 3)
RqJA
47.7
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which substantially
less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
April, 2021 − Rev. 1
G (4)
S (1, 2, 3)
1.6
EAS
© Semiconductor Components Industries, LLC, 2019
D (5 − 8)
W
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 4.6 A)
Parameter
N−Channel
13
TA = 100°C
TA = 25°C, tp = 10 ms
W
50
TA = 100°C
TA = 25°C
75 A
53
TC = 100°C
TA = 25°C
ID MAX
1
LFPAK8
3.3x3.3
CASE 760AD
MARKING DIAGRAM
005N
04CL
AWLYW
005N04CL = Specific Device Code
A
= Assembly Location
WL = Wafer Lot
Y
= Year
W
= Work Week
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Publication Order Number:
NVTYS005N04CL/D
NVTYS005N04CL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
VGS = 0 V,
VDS = 40 V
V
TJ = 25°C
10
TJ = 125°C
250
100
mA
IGSS
VDS = 0 V, VGS = 20 V
nA
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 40 mA
2.0
V
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V, ID = 35 A
4
4.8
mW
VGS = 4.5 V, ID = 35 A
6.2
7.6
VDS = 5 V, ID = 35 A
82
S
1300
pF
ON CHARACTERISTICS (Note 5)
Forward Transconductance
gFS
1.2
CHARGES AND CAPACITANCES
Ciss
Input Capacitance
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Plateau Voltage
VGP
3.4
V
Threshold Gate Charge
QG(TH)
2.1
nC
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 32 V, ID = 35 A
550
19
4.1
4.2
VGS = 4.5 V, VDS = 32 V, ID = 35 A
10.9
VGS = 10 V, VDS = 32 V, ID = 35 A
23.1
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
ns
12.7
VGS = 4.5 V, VDS = 32 V,
ID = 35 A, RG = 1 W
tf
7.9
18.5
6.7
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.86
TJ = 125°C
0.75
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 35 A
31
VGS = 0 V, dlS/dt = 100 A/ms,
IS = 35 A
QRR
1.2
V
ns
14
17
11
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NVTYS005N04CL
TYPICAL CHARACTERISTICS
100
3.6 V
VGS = 4.5 V to 10 V
70
ID, DRAIN CURRENT (A)
80
90
60
50
3.2 V
40
30
20
2.8 V
80
70
60
50
40
20
10
0
0
0
1.2
0.8
0.4
1.6
2.0
2.4
2.8
3
5
4
Figure 2. Transfer Characteristics
10
8
6
4
3
4
6
5
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
8
TJ = 25°C
7
VGS = 4.5 V
6
5
VGS = 10 V
4
3
2
1
0
5
10
100K
VGS = 10 V
ID = 35 A
IDSS, LEAKAGE (nA)
1.6
1.4
1.2
1.0
0.8
0.6
25
50
75
100
125
25
30
35
40
TJ = 175°C
10K
TJ = 150°C
1K
TJ = 125°C
100
TJ = 85°C
10
TJ = 25°C
1
0
20
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.0
0.4
−50 −25
15
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
2
VGS, GATE−TO−SOURCE VOLTAGE (V)
12
1.8
1
0
TJ = −55°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ = 25°C
ID = 35 A
2
TJ = 125°C
Figure 1. On−Region Characteristics
14
2
TJ = 25°C
30
10
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
90
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
100
4.0 V
150 175
0.1
5
10
15
20
25
30
35
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
40
NVTYS005N04CL
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
10K
CISS
C, CAPACITANCE (pF)
1K
COSS
100
CRSS
10
1
VGS = 0 V
TJ = 25°C
f = 1 MHz
10
0
20
30
40
IS, SOURCE CURRENT (A)
t, TIME (ns)
5
QGS
4
QGD
3
VDS = 32 V
TJ = 25°C
ID = 35 A
2
1
0
4
0
100
tr
td(on)
10
tf
8
12
16
20
24
1
10
1
0.1
100
10
VGS = 0 V
TJ = 125°C
TJ = 25°C TJ = −55°C
0.3 0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
TC = 25°C
Single Pulse
VGS ≤ 10 V
TJ(initial) = 25°C
10
10 ms
IPEAK (A)
ID, DRAIN CURRENT (A)
6
Figure 8. Gate−to−Source vs. Total Charge
td(off)
10
1
0.1
7
Figure 7. Capacitance Variation
100
100
8
QG, TOTAL GATE CHARGE (nC)
VGS = 4.5 V
VDS = 32 V
ID = 35 A
1000
9
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
1
10
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
10
TJ(initial) = 100°C
1
0.5 ms
1 ms
10 ms
100
0.1
1000
0.00001
0.0001
0.001
0.01
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVTYS005N04CL
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
R(t) (°C/W)
10
1
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
Marking
Package
Shipping†
NVTYS005N04CLTWG
005N
04CL
LFPAK33
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
NVTYS005N04CL
PACKAGE DIMENSIONS
LFPAK8 3.3x3.3, 0.65P
CASE 760AD
ISSUE E
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
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