找到218相关的规格书共4,369
型号厂商描述数据手册替代料参考价格
SM5A27HE3--2DVishay Intertechnology, Inc.ESD抑制器/TVS二极管 VWM=22V VBR(min)=24V VC=40V@IPP=55A DO218AB获取价格
STW18NB40STMICROELECTRONICS[STMicroelectronics] STW18NB40 - N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET - STMicroelectronics获取价格
PMV164ENEARRubycon Corporation类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):1.6A;功率(Pd):640mW;5.8W;导通电阻(RDS(on)@Vgs,Id):218mΩ@1.6A,10V;获取价格
0758580105MOLEX9[MolexElectronicsLtd.] 0758580105 - 1.85mm by 1.85mm (.073 by .073) Pitch 4-Pair GbX® Backplane Connector System, Open Header, 80 Circuits, Lead Free, Pin Length 5.55mm (.218) - Molex Electronics Ltd.获取价格
75838-4105MOLEX9[MolexElectronicsLtd.] 75838-4105 - 1.85mm by 1.85mm (.073 by .073) Pitch 4-Pair GbX® Backplane Connector System, Open Header, Right Guide, 80 Circuits, Selective Gold (Au), Pin Length 5.55mm (.218) - Molex Electronics Ltd.获取价格
0758384105MOLEX9[MolexElectronicsLtd.] 0758384105 - 1.85mm by 1.85mm (.073 by .073) Pitch 4-Pair GbX® Backplane Connector System, Open Header, Right Guide, 80 Circuits, Selective Gold (Au), Pin Length 5.55mm (.218) - Molex Electronics Ltd.获取价格
FQA13N50CFMurata Manufacturing Co., Ltd.类型:N沟道;漏源电压(Vdss):500V;连续漏极电流(Id):15A;功率(Pd):218W;导通电阻(RDS(on)@Vgs,Id):430mΩ@10V,7.5A;阈值电压(Vgs(th)@Id):4V@250uA;栅极电荷(Qg@Vgs):43nC@10V;输入电容(Ciss@Vds):1.58nF@25V;反向传输电容(Crss@Vds):20pF@25V;工作温度:-55℃~+150℃@(Tj);获取价格
FQA13N50C-F109Murata Manufacturing Co., Ltd.类型:N沟道;漏源电压(Vdss):500V;连续漏极电流(Id):13.5A;功率(Pd):218W;导通电阻(RDS(on)@Vgs,Id):390mΩ@10V,6.75A;阈值电压(Vgs(th)@Id):4V@250uA;栅极电荷(Qg@Vgs):43nC@10V;输入电容(Ciss@Vds):1.58nF@25V;反向传输电容(Crss@Vds):20pF@25V;工作温度:-55℃~+150℃@(Tj);获取价格
FDME910PZTMurata Manufacturing Co., Ltd.类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):8A;功率(Pd):2.1W;导通电阻(RDS(on)@Vgs,Id):20mΩ@4.5V,8A;阈值电压(Vgs(th)@Id):600mV@250uA;栅极电荷(Qg@Vgs):15nC@4.5V;输入电容(Ciss@Vds):1.586nF@10V;反向传输电容(Crss@Vds):218pF@10V;工作温度:-55℃~+150℃@(Tj);获取价格