APT50M75JLLU3

APT50M75JLLU3 ISOTOP® Buck chopper MOSFET Power Module D Application • AC and DC motor control • Switched Mode Power Supplies G S A A S D G VDSS = 500V RDSon = 75mΩ max @ Tj = 25°C ID = 51A @ Tc = 25°C Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • ISOTOP® Package (SOT-227) • Very low stray inductance • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Very rugged • Low profile • RoHS Compliant ISOTOP ID IDM VGS RDSon PD IAR EAR EAS IFA V IFRMS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) Tc = 25°C Tc = 80°C Max ratings 500 51 39 204 ±30 75 290 51 50 2500 30 39 Unit V A V mΩ W A June, 2006 Symbol VDSS mJ A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. www.microsemi.com 1–8 APT50M75JLLU3 – Rev 1 Absolute maximum ratings APT50M75JLLU3 All ratings @ Tj = 25°C unless otherwise specified IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 25.5A VGS = VDS, ID = 1mA VGS = ±20 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 51A Resistive Switching VGS = 15V VBus = 250V ID = 51A R G = 0.6Ω 3 Min Typ 5590 1180 85 123 33 Max 100 500 75 5 ±100 Unit Max Unit µA mΩ V nA pF nC 65 10 20 21 ns 5 Inductive switching @ 25°C VGS = 15V, VBus = 330V ID = 51A, R G = 5Ω 755 Inductive switching @ 125°C VGS = 15V, VBus = 330V ID = 51A, R G = 5Ω 1241 726 846 µJ µJ June, 2006 Symbol www.microsemi.com 2–8 APT50M75JLLU3 – Rev 1 Electrical Characteristics APT50M75JLLU3 Chopper diode ratings and characteristics Symbol VF Characteristic Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Reverse Recovery Time trr Test Conditions IF = 30A IF = 60A IF = 30A VR = 600V VR = 600V VR = 200V IF=1A,VR=30V di/dt =100A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 23 IF = 30A VR = 400V di/dt =200A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 85 160 4 8 130 700 70 1300 30 Reverse Recovery Time IRRM Maximum Reverse Recovery Current Qrr Reverse Recovery Charge trr Qrr Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IRRM IF = 30A VR = 400V di/dt =1000A/µs Min Junction to Case Thermal Resistance RthJA VISOL TJ,TSTG TL Torque Wt Junction to Ambient (IGBT & Diode) 250 500 Tj = 125°C Characteristic RthJC Max 1.8 44 Thermal and package characteristics Symbol Typ 1.6 1.9 1.4 Min Typ MOSFET Diode RMS Isolation Voltage, any terminal to case t =1 min, I isol