APTC80H15T3G

APTC80H15T3G VDSS = 800V RDSon = 150m max @ Tj = 25°C ID = 28A @ Tc = 25°C Full - Bridge Super Junction MOSFET Power Module Application  Welding converters  Switched Mode Power Supplies  Uninterruptible Power Supplies Features  Super junction MOSFET - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged  Kelvin source for easy drive  Very low stray inductance  Internal thermistor for temperature monitoring Benefits  Outstanding performance at high frequency operation  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Solderable terminals both for power and signal for easy PCB mounting  Low profile  Each leg can be easily paralleled to achieve a phase leg of twice the current capability  RoHS Compliant All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings (per super junction MOSFET) ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 800 28 21 110 ±30 150 277 17 0.5 670 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. www.microsemi.com 1–7 APTC80H15T3G – Rev 4 November, 2017 Symbol VDSS APTC80H15T3G Electrical Characteristics (per super junction MOSFET) Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min Typ 2.1 3 VGS = 0V,VDS = 800V VGS = 10V, ID = 14A VGS = VDS, ID = 2mA VGS = ±20 V, VDS = 0V Max 50 150 3.9 ±150 Unit µA m V nA Max Unit Dynamic Characteristics (per super junction MOSFET) Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 25V f = 1MHz Min Typ 4507 2092 108 pF 180 VGS = 10V VBus = 400V ID = 28A 22 nC 90 Inductive switching @125°C VGS = 15V VBus = 533V ID = 28A RG = 2.5 Inductive switching @ 25°C VGS = 15V, VBus = 533V ID = 28A, RG = 2.5Ω Inductive switching @ 125°C VGS = 15V, VBus = 533V ID = 28A, RG = 2.5Ω 10 13 83 ns 35 486 µJ 278 850 µJ 342 0.45 °C/W Source - Drain diode ratings and characteristics (per super junction MOSFET) Symbol Characteristic Continuous Source current IS (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery  trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Tc = 25°C Tc = 80°C Typ 28 21 VGS = 0V, IS = - 28A IS = - 28A ; VR = 400V diS/dt = 200A/µs Max A 1.2 6 550 30 Unit V V/ns ns µC www.microsemi.com 2–7 APTC80H15T3G – Rev 4 November, 2017  dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS  - 28A di/dt  200A/µs VR  VDSS Tj  150°C APTC80H15T3G Thermal and package characteristics Symbol RthJC VISOL TJ TJOP TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To heatsink M4 Package Weight Min 4000 -40 -40 -40 -40 2 Max 0.45 150 TJmax -25 125 125 3 110 Unit °C/W V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT  R25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature   1 1  RT: Thermistor value at T exp B25 / 85    T T   25  See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com www.microsemi.com 3–7 APTC80H15T3G – Rev 4 November, 2017 Package outline (dimensions in mm) APTC80H15T3G Thermal Impedance (°C/W) Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.45 0.9 0.4 0.35 0.7 0.3 0.5 0.25 0.2 0.3 0.15 0.1 0.1 Single Pulse 0.05 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 80 100 VGS=15&10V 6.5V 60 50 ID, Drain Current (A) 6V 40 5.5V 30 5V 20 4.5V 10 80 60 40 TJ=25°C 20 TJ=125°C 4V TJ=-55°C 0 0 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.4 30 Normalized to VGS=10V @ 14A 1.3 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle VGS=10V 1.2 VGS=20V 1.1 1 0.9 25 20 15 10 5 0 0.8 0 10 20 30 40 50 60 25 50 75 100 125 150 TC, Case Temperature (°C) ID, Drain Current (A) www.microsemi.com 4–7 APTC80H15T3G – Rev 4 November, 2017 ID, Drain Current (A) 70 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 ON resistance vs Temperature 3.0 VGS=10V ID= 14A 2.5 2.0 1.5 1.0 0.5 0.0 -50 100 150 Maximum Safe Operating Area Threshold Voltage vs Temperature 1000 1.2 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 50 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 1.0 0.9 0.8 100 0 50 100 0 1 1000 Coss 100 Crss 10 0 VGS, Gate to Source Voltage (V) Ciss 1ms Single pulse TJ=150°C TC=25°C 1 TC, Case Temperature (°C) 10000 100µs 100ms 150 Capacitance vs Drain to Source Voltage 100000 limited by RDSon 10 0.7 -50 C, Capacitance (pF) 0 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 ID=28A TJ=25°C 14 VDS=160V 12 VDS=400V 10 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 8 VDS=640V 6 4 2 0 0 40 80 120 160 200 Gate Charge (nC) 5–7 APTC80H15T3G – Rev 4 November, 2017 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTC80H15T3G APTC80H15T3G Delay Times vs Current Rise and Fall times vs Current 50 100 tf 40 VDS=533V RG=2.5Ω TJ=125°C L=100µH 60 40 tr and tf (ns) td(on) 20 30 VDS=533V RG=2.5Ω TJ=125°C L=100µH 20 10 0 0 10 20 30 40 ID, Drain Current (A) 50 10 1200 Switching Energy (µJ) Eon and Eoff (µJ) 2500 VDS=533V RG=2.5Ω TJ=125°C L=100µH Eon 900 600 20 30 40 ID, Drain Current (A) 50 Switching Energy vs Gate Resistance Switching Energy vs Current 1500 Eoff 300 VDS=533V ID=28A TJ=125°C L=100µH 2000 1500 Eon 1000 Eon Eoff 500 0 0 10 20 30 40 ID, Drain Current (A) 0 50 Operating Frequency vs Drain Current 350 ZVS 300 250 200 Hard switching 150 100 IDR, Reverse Drain Current (A) 400 Frequency (kHz) tr VDS=533V D=50% RG=2.5Ω TJ=125°C TC=75°C ZCS 50 0 6 5 10 15 20 Gate Resistance (Ohms) 25 Source to Drain Diode Forward Voltage 1000 100 8 10 12 14 16 18 20 22 24 26 ID, Drain Current (A) www.microsemi.com TJ=150°C 10 TJ=25°C 1 0.2 0.6 1 1.4 1.8 VSD, Source to Drain Voltage (V) 6–7 APTC80H15T3G – Rev 4 November, 2017 td(on) and td(off) (ns) td(off) 80 APTC80H15T3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User or customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp Life Support Application Seller's Products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the Seller's Product could create a situation where personal injury, death or property damage or loss may occur (collectively "Life Support Applications"). Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations that Seller was negligent regarding the design or manufacture of the goods. www.microsemi.com 7–7 APTC80H15T3G – Rev 4 November, 2017 Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the new proposed specific part.