APTM50H15FT1G

APTM50H15UT1G VDSS = 500V RDSon = 150mΩ typ @ Tj = 25°C ID = 25A @ Tc = 25°C Full - Bridge MOSFET Power Module 4 3 Q1 Q3 5 2 6 1 Q2 Q4 7 9 8 11 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 10 NTC 12 Features • Power MOS 8™ Ultrafast FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Ultrafast intrinsic reverse diode - Avalanche energy rated - Very rugged • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • • • • • • • Pins 3/4 must be shorted together Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Each leg can be easily paralleled to achieve a phase leg of twice the current capability RoHS Compliant Absolute maximum ratings IDM VGS RDSon PD IAR Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25°C Max ratings 500 25 19 135 ±30 180 208 21 Unit V December, 2007 ID Parameter Drain - Source Breakdown Voltage A V mΩ W A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–5 APTM50H15UT1G – Rev 0 Symbol VDSS APTM50H15UT1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Tj = 25°C VDS = 500V VGS = 0V Tj = 125°C VGS = 10V, ID = 21A VGS = VDS, ID = 1mA VGS = ±30 V Min 3 Typ 150 4 Max 250 1000 180 5 ±100 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge 170 Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 250V ID = 21A Td(on) Turn-on Delay Time Resistive switching @ 25°C VGS = 15V VBus = 333V ID = 21A RG = 4.7Ω 29 Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Min Typ 5448 735 72 pF nC 38 80 35 ns 80 26 Source - Drain diode ratings and characteristics Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery X trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Typ Tj = 25°C Max 25 19 1 30 215 Tj = 125°C 370 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 21A IS = - 21A VR = 100V diS/dt = 100A/µs Tj = 25°C 0.90 Tj = 125°C 2.6 Unit A V V/ns ns µC www.microsemi.com 2–5 APTM50H15UT1G – Rev 0 December, 2007 X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 21A di/dt ≤ 1000A/µs VDD ≤ 333V Tj ≤ 125°C APTM50H15UT1G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 50 ID, Drain Current (A) TJ=125°C 40 30 20 10 0.5 TJ=25°C 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Capacitance vs Drain to Source Voltage 100000 12 C, Capacitance (pF) VDS=100V ID=21A TJ=25°C VDS=250V 8 VDS=400V 6 4 10000 Ciss 1000 Coss 100 Crss 2 10 0 0 30 60 90 120 150 180 0 50 100 150 200 VDS, Drain to Source Voltage (V) Gate Charge (nC) www.microsemi.com 4–5 December, 2007 RDSon, Drain to Source ON resistance VGS=10V ID=21A TJ, Junction Temperature (°C) VGS, Gate to Source Voltage 20 60 1.5 10 15 Transfert Characteristics Normalized RDSon vs. Temperature 2.5 2 10 VDS, Drain to Source Voltage (V) VDS, Drain to Source Voltage (V) APTM50H15UT1G – Rev 0 ID, Drain Current (A) VGS=10V APTM50H15UT1G Drain Current vs Source to Drain Voltage ISD, Reverse Drain Current (A) 60 50 TJ=125°C 40 30 20 TJ=25°C 10 0 0 0.2 0.4 0.6 0.8 1 1.2 VSD, Source to Drain Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.7 0.6 0.9 0.5 0.7 0.4 0.5 0.3 0.2 0.1 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5–5 APTM50H15UT1G – Rev 0 December, 2007 rectangular Pulse Duration (Seconds)