APTM50HM75SCTG

APTM50HM75SCTG VDSS = 500V RDSon = 75mΩ typ @ Tj = 25°C ID = 46A @ Tc = 25°C Full bridge Series & SiC parallel diodes MOSFET Power Module VBUS CR3A CR1A CR1B Q1 CR3B Q3 G3 G1 OUT1 OUT2 S1 Q2 S3 CR4A CR2A CR2B CR4B Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • • • • • Kelvin source for easy drive Very low stray inductance Lead frames for power connections Internal thermistor for temperature monitoring High level of integration Q4 G2 G4 S2 S4 NTC1 Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies 0/VBUS NTC2 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 46 34 184 ±30 90 357 46 50 2500 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–8 APTM50HM75SCTG – Rev 5 September, 2014 Symbol VDSS APTM50HM75SCTG Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 23A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V 75 3 Max 100 500 90 5 ±100 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 25V f = 1MHz Min Typ 5590 1180 85 pF 123 VGS = 10V VBus = 250V ID = 46A 33 nC 65 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 46A RG = 5Ω 18 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 46A, RG = 5Ω 453 35 ns 87 77 µJ 726 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 46A, RG = 5Ω 745 µJ 846 0.35 °C/W Max 600 50 Unit V µA A Series diode ratings and characteristics Characteristic Peak Repetitive Reverse Voltage Reverse Leakage Current DC Forward current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy RthJC Test Conditions Min Typ VR=600V IF = 50A VGE = 0V IF = 50A VR = 300V di/dt =1800A/µs Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C 50 1.6 1.5 100 Tj = 150°C Tj = 25°C 150 2.6 Tj = 150°C Tj = 25°C Tj = 150°C 5.4 0.60 1.2 Junction to Case Thermal Resistance 2 ns µC mJ 1.42 www.microsemi.com V °C/W 2–8 APTM50HM75SCTG – Rev 5 September, 2014 Symbol VRRM IRM IF APTM50HM75SCTG Parallel diode ratings and characteristics Symbol Characteristic VRRM Peak Repetitive Reverse Voltage IRM Reverse Leakage Current Test Conditions VR=600V Min Tj = 25°C Tj = 175°C Tc = 125°C Tj = 25°C Tj = 175°C Typ 100 200 20 1.6 2.0 IF DC Forward Current VF Diode Forward Voltage IF = 20A QC Total Capacitive Charge IF = 20A, VR = 600V di/dt =800A/µs 56 Q Total Capacitance f = 1MHz, VR = 200V 130 f = 1MHz, VR = 400V 100 RthJC Max 600 400 2000 Unit V µA A 1.8 2.4 V nC Junction to Case Thermal Resistance pF 1.5 °C/W Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To Heatsink M5 Package Weight Min 4000 -40 -40 -40 -40 2.5 Max 150 TJmax -25 125 100 4.7 160 Unit V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com). Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R 25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T − ⎟⎟⎥ exp⎢ B 25 / 85 ⎜⎜ ⎝ T25 T ⎠⎦⎥ ⎣⎢ www.microsemi.com 3–8 APTM50HM75SCTG – Rev 5 September, 2014 Symbol R25 ∆R25/R25 B25/85 ∆B/B APTM50HM75SCTG SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com Typical MOSFET Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 0.9 0.3 0.7 0.25 0.5 0.2 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 160 Transfert Characteristics 8V VGS=10&15V 140 ID, Drain Current (A) ID, Drain Current (A) 10 120 180 7.5V 120 100 7V 80 6.5V 60 40 6V 20 5.5V VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 100 80 60 40 TJ=25°C 20 TJ=125°C TJ=-55°C 0 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 RDS(on) vs Drain Current 1.20 Normalized to VGS=10V @ 23A 1.15 2 3 4 5 6 7 8 DC Drain Current vs Case Temperature 50 VGS=10V 1.10 1.05 1 VGS, Gate to Source Voltage (V) ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance 1 VGS=20V 1.00 0.95 0.90 0.85 0.80 40 30 20 10 0 0 20 40 60 80 100 25 ID, Drain Current (A) www.microsemi.com 50 75 100 125 TC, Case Temperature (°C) 150 4–8 APTM50HM75SCTG – Rev 5 September, 2014 Thermal Impedance (°C/W) 0.4 Breakdown Voltage vs Temperature 1.2 1.1 1.0 0.9 25 50 75 100 125 150 RDS(on), Drain to Source ON resistance (Normalized) ON resistance vs Temperature 2.5 VGS=10V I D=23A 2.0 1.5 1.0 0.5 25 Threshold Voltage vs Temperature 100 125 150 Maximum Safe Operating Area ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 75 1000 1.1 1.0 0.9 0.8 0.7 100 50 75 100 125 Single pulse TJ =150°C TC=25°C 150 1 VGS , Gate to Source Voltage (V) Ciss Coss Crss 100 10 0 10 20 30 10ms 10 100 1000 VDS , Drain to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 1000 1ms 1 TC, Case Temperature (°C) 10000 100µs limited by by RDSon limited RDSon 10 0.6 25 C, Capacitance (pF) 50 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 40 50 Gate Charge vs Gate to Source Voltage 14 VDS=100V ID=46A 12 TJ =25°C VDS=250V 10 VDS=400V 8 6 4 2 0 VDS , Drain to Source Voltage (V) 0 20 40 60 80 100 120 140 160 Gate Charge (nC) www.microsemi.com 5–8 APTM50HM75SCTG – Rev 5 September, 2014 BVDSS , Drain to Source Breakdown Voltage (Normalized) APTM50HM75SCTG APTM50HM75SCTG Rise and Fall times vs Current Delay Times vs Current 100 120 td(off) t r and tf (ns) VDS=333V R G =5Ω TJ=1 25 °C L=100µH 60 40 td(on) 20 80 60 40 tr 20 0 0 10 20 30 40 50 60 70 10 ID, Drain Current (A) 30 40 50 60 70 Switching Energy vs Gate Resistance 3.5 VDS=333V R G =5Ω TJ=1 25 °C L=100µH 1.6 Switching Energy (mJ) 2 Switching Energy (mJ) 20 ID, Drain Current (A) Switching Energy vs Current Eoff 1.2 Eon 0.8 0.4 Eoff VDS=333V I D=46A TJ=1 25 °C L=100µH 3 2.5 Eoff 2 1.5 1 Eon 0.5 0 10 20 30 40 50 60 0 70 ID, Drain Current (A) VDS=333 V D=50% R G =5Ω TJ=1 25 °C TC =75 °C ZVS 300 ZCS 250 200 150 Hard switching 100 50 1000 IDR, Reverse Drain Current (A) 400 350 10 20 30 40 50 Gate Resistance (Ohms) Operating Frequency vs Drain Current Frequency (kHz) tf 0 100 Source to Drain Diode Forward Voltage TJ=150°C 10 TJ=25°C 1 10 15 20 25 30 35 40 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) ID, Drain Current (A) www.microsemi.com 6–8 APTM50HM75SCTG – Rev 5 September, 2014 td(on) and t d(off) (ns) VDS=333V R G =5Ω TJ=1 25 °C L=100µH 100 80 APTM50HM75SCTG Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.6 0.9 1.4 1.2 0.7 1 0.5 0.8 0.6 0.3 0.4 0.1 0.2 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) 400 TJ=25°C 35 30 TJ=75°C 25 IR Reverse Current (µA) IF Forward Current (A) Reverse Characteristics Forward Characteristics 40 TJ=175°C 20 TJ=125°C 15 10 5 300 0.5 1 1.5 2 2.5 3 TJ=125°C 250 200 TJ=75°C 150 100 TJ=25°C 50 0 0 TJ=175°C 350 3.5 VF Forward Voltage (V) 0 200 300 400 500 600 700 VR Reverse Voltage (V) 800 Capacitance vs.Reverse Voltage 800 600 500 400 300 200 100 0 1 10 100 VR Reverse Voltage 1000 www.microsemi.com 7–8 APTM50HM75SCTG – Rev 5 September, 2014 C, Capacitance (pF) 700 APTM50HM75SCTG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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